SONY 1T365

1T365
Silicon Variable Capacitance Diode
Description
The 1T365 is a variable capacitance diode
contained in super miniature package, and used for
electronic-tuning of BS tuner.
Features
• Super miniature package
• Small capacitance
0.7 pF Typ. (VR=25 V)
• Low leakage current
10 nA Max. (VR=28 V)
• Small serial resistance 1.1 Ω Typ.
(VR=1 V, f=470 MHz)
Structure
Silicon epitaxial planar type diode
M-235
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR
30
V
• Maximum reverse voltage VRM
35
V
(RL≥10 kΩ)
• Operating temperature
Topr –20 to +75 °C
• Storage temperature
Tstg –65 to +150 °C
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Serial resistance
Capacitance deviation in a
matching group
(Ta=25 °C)
Symbol
IR
C2
C25
C2/C25
rs
∆C
Conditions
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
VR=1 V, f=470 MHz
VR=2 to 25 V, f=1 MHz
Min.
3.31
0.61
5.0
Typ.
0.70
5.7
1.1
Max.
10
4.55
0.77
Unit
nA
pF
pF
1.8
Ω
5.0
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E91539A82-TE
1T365
Example of Representative Characteristics
Diode capacitance vs. Reverse voltage
Reverse voltage vs. Operating ambient temperature
45
10
IR=10µA
VR-Reverse voltage (V)
C-Diode capacitance (pF)
Ta=25°C
f=1MHz
1
40
35
30
–20
0
20
40
60
80
100
Ta-Operating ambient temperature (°C)
0.1
1
10
100
VR-Reverse voltage (V)
Reverse current vs. Operating ambient temperature
Reverse current vs. Reverse voltage
100
10
VR=28V
Ta=60°C
IR-Reverse current (pA)
IR-Reverse current (pA)
10
1.0
1.0
Ta=25°C
0.1
0.1
0.01
–20
0
20
40
60
0.01
1
80
10
VR-Reverse voltage (V)
Ta-Operating ambient temperature (°C)
—2—
100
1T365
Serial resistance vs. Reverse voltage
Serial resistance vs. Frequency
1.6
1.6
f=470MHz
Ta=25°C
VR=1V
Ta=25°C
1.5
1.2
1.4
rs-Serial resistance (Ω)
rs-Serial resistance (Ω)
1.4
1.0
0.8
0.6
0.4
1.3
1.2
1.1
1.0
0.2
0
1
2
3
5
10
20
0.9
30
VR-Reverse voltage (V)
0.8
100
200
500
1000
f-Frequency (MHz)
Diode capacitance vs. Operating ambient temperature
Temperature coefficient of diode capacitance
1.03
1000
f=1MHz
Temperature coefficient (ppm/°C)
C (Ta)
Diode capacitance
C (25°C)
1.02
f=1MHz
VR=2V
VR=25V
1.01
VR=10V
1.00
0.99
0.98
–20
0
20
40
60
80
Ta-Operating ambient temperature (°C)
100
10
1
10
VR-Reverse voltage (V)
—3—
100
1T365
Package Outline
Unit : mm
AA AA
M-235
+ 0.2
∗1.25 – 0.1
∗0.9 ± 0.1
+ 0.1
0.3 – 0.05
0.2
2.5 ± 0.2
∗1.7 ± 0.1
2
1
+ 0.1
0.3 – 0.05
0 ± 0.05
+ 0.1
0.11 – 0.06
0° to 10°
NOTE: Dimension “∗” does not include mold protrusion.
SONY CODE
M-235
EIAJ CODE
JEDEC CODE
Marking
PACKAGE WEIGHT
CATHODE MARK
0.1g
2
65
B
1
—4—
Notes
1) B:Lot No.(Year and Month of manufacture)
Year;Last one digit
Month;A,B,C(for Oct. to Dec.)
1 to 9(for Jan.to Sept.)