1T365 Silicon Variable Capacitance Diode Description The 1T365 is a variable capacitance diode contained in super miniature package, and used for electronic-tuning of BS tuner. Features • Super miniature package • Small capacitance 0.7 pF Typ. (VR=25 V) • Low leakage current 10 nA Max. (VR=28 V) • Small serial resistance 1.1 Ω Typ. (VR=1 V, f=470 MHz) Structure Silicon epitaxial planar type diode M-235 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 30 V • Maximum reverse voltage VRM 35 V (RL≥10 kΩ) • Operating temperature Topr –20 to +75 °C • Storage temperature Tstg –65 to +150 °C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Serial resistance Capacitance deviation in a matching group (Ta=25 °C) Symbol IR C2 C25 C2/C25 rs ∆C Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz VR=1 V, f=470 MHz VR=2 to 25 V, f=1 MHz Min. 3.31 0.61 5.0 Typ. 0.70 5.7 1.1 Max. 10 4.55 0.77 Unit nA pF pF 1.8 Ω 5.0 % Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E91539A82-TE 1T365 Example of Representative Characteristics Diode capacitance vs. Reverse voltage Reverse voltage vs. Operating ambient temperature 45 10 IR=10µA VR-Reverse voltage (V) C-Diode capacitance (pF) Ta=25°C f=1MHz 1 40 35 30 –20 0 20 40 60 80 100 Ta-Operating ambient temperature (°C) 0.1 1 10 100 VR-Reverse voltage (V) Reverse current vs. Operating ambient temperature Reverse current vs. Reverse voltage 100 10 VR=28V Ta=60°C IR-Reverse current (pA) IR-Reverse current (pA) 10 1.0 1.0 Ta=25°C 0.1 0.1 0.01 –20 0 20 40 60 0.01 1 80 10 VR-Reverse voltage (V) Ta-Operating ambient temperature (°C) —2— 100 1T365 Serial resistance vs. Reverse voltage Serial resistance vs. Frequency 1.6 1.6 f=470MHz Ta=25°C VR=1V Ta=25°C 1.5 1.2 1.4 rs-Serial resistance (Ω) rs-Serial resistance (Ω) 1.4 1.0 0.8 0.6 0.4 1.3 1.2 1.1 1.0 0.2 0 1 2 3 5 10 20 0.9 30 VR-Reverse voltage (V) 0.8 100 200 500 1000 f-Frequency (MHz) Diode capacitance vs. Operating ambient temperature Temperature coefficient of diode capacitance 1.03 1000 f=1MHz Temperature coefficient (ppm/°C) C (Ta) Diode capacitance C (25°C) 1.02 f=1MHz VR=2V VR=25V 1.01 VR=10V 1.00 0.99 0.98 –20 0 20 40 60 80 Ta-Operating ambient temperature (°C) 100 10 1 10 VR-Reverse voltage (V) —3— 100 1T365 Package Outline Unit : mm AA AA M-235 + 0.2 ∗1.25 – 0.1 ∗0.9 ± 0.1 + 0.1 0.3 – 0.05 0.2 2.5 ± 0.2 ∗1.7 ± 0.1 2 1 + 0.1 0.3 – 0.05 0 ± 0.05 + 0.1 0.11 – 0.06 0° to 10° NOTE: Dimension “∗” does not include mold protrusion. SONY CODE M-235 EIAJ CODE JEDEC CODE Marking PACKAGE WEIGHT CATHODE MARK 0.1g 2 65 B 1 —4— Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)