1T410
Variable Capacitance Diode
Description
The 1T410 is a variable capacitance diode
designed for electronic tuning of BS/CS tuners using
a super-small-miniature flat package (SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 1.5 Ω Max. (f=470 MHz)
• Large capacitance ratio: 12.0 Typ.
(C1/C25)
• Small leakage current: 10 nA Max. (VR=25 V)
• Capacitance deviation in a matching group:
within 6 %
Applications
Electronic tuning of BS/CS tuners
M-290
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR
30
V
• Peak reverse voltage
VRM
35
V
(RL ≥ 10 kΩ)
• Operating temperature Topr
–20 to +75
°C
• Storage temperature
Tstg –65 to +150 °C
Structure
Silicon epitaxial planar type diode
Electrical Characteristics
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
(Ta=25 °C)
Symbol
Conditions
IR
VR
C1
C25
C1/C25
rs
VR=25 V
IR=1 µA
VR=1 V, f=1 MHz
VR=25 V, f=1 MHz
∆C
Min.
30
5.96
0.46
10.0
VR=5 V, f=470 MHz
VR=1 to 25 V, f=1 MHz
Typ.
12.0
1.30
Max.
Unit
10
7.16
0.60
nA
v
pF
pF
1.50
Ω
6
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E96145A67-TE
1T410
Reverse current vs. Ambient temperature
Diode capacitance vs. Reverse voltage
10
100
Ta=25°C
VR=28V
2
10
1
IR-Reverse current (pA)
C-Diode capacitance (pF)
5
0.5
0.2
0.1
1
1
2
5
10
20
VR-Reverse voltage (V)
50
0.1
–20
Forward voltage vs. Ambient temperature
45
IR=10µA
VR-Reverse voltage (V)
IF=1mA
0.80
0.70
0.60
–20
80
Reverse voltage vs. Ambient temperature
0.90
VF-Forward voltage (V)
0
20
40
60
Ta-Ambient temperature (°C)
0
20
40
60
Ta-Ambient temperature (°C)
80
—2—
40
35
30
–20
0
20
40
60
Ta-Ambient temperature (°C)
80
1T410
Diode capacitance vs. Ambient temperature
C (Ta)/C (25°C)-Diode capacitance
1.03
VR=1V
1.02
VR=2V
VR=7V
1.01
VR=25V
VR=15V
1.00
0.99
0.98
–20
0
20
40
60
Ta-Ambient temperature (°C)
80
Temperature coefficient of diode capacitance
Reverse current vs. Reverse voltage
1000
100
Temperature coefficient (ppm/°C)
IR-Reverse current (pA)
Ta=80°C
10
Ta=60°C
1
Ta=25°C
500
200
100
50
1
0.1
1
3
10
VR-Reverse voltage (V)
30
—3—
2
5
10
VR-Reverse voltage (V)
20
50
1T410
Package Outline
Unit : mm
0.2 M
A
M -290
10KM AX
0.2}0. 05
1.7}0. 1
1.3}0. 1
A
0.8}0. 1
c
b
10KM AX
0.7}0. 1
BASE M ETAL W ITH PLATIN G
c
0.11}0. 005
05
0.11{0.
|0. 01
b
0.3}0. 025
05
0.3{0.
|0. 02
PAC KAG E M ATER IAL
EPO XY R ESIN
LEAD TR EATM EN T
SO LD ER PLATIN G
EIAJ C O D E
LEAD M ATER IAL
C O PPER
JED EC C O D E
PAC KAG E W EIG H T
0.002g
SO N Y C O D E
M -290
Mark
1
1 : Cathode
X0
2
2 : Anode
—4—