1T413 Variable Capacitance Diode Description The 1T413 is a variable capacitance diode designed for the digital cellular phone VCO using a super-small-miniature flat package (SSVC). Features • Super-small-miniature flat package • Low series resistance: 0.40 Ω Max. (f=470 MHz) • Large capacitance ratio: 2.90 Typ. (C1/C4) • Small leakage current: 10 nA Max. (VR=15 V) Applications Digital cellular phone VCO M-290 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 15 • Operating temperature Topr –20 to +75 • Storage temperature Tstg –65 to +150 V °C °C Structure Silicon epitaxial planar type diode Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance (Ta=25 °C) Symbol IR C1 C4 C1/C4 rs Conditions VR=15 V VR=1 V, f=1 MHz VR=4 V, f=1 MHz VR=1 V, f=470 MHz Min. Typ. 15.0 5.1 2.5 2.9 Max. 10.0 17.5 6.1 Unit nA pF pF 0.40 Ω Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E99220-TE 1T413 Example of Representative Characteristics Diode capacitance vs. Reverse voltage Reverse current vs. Ambient temperature 100 Ta=25°C VR=15V 20 10 10 IR-Reverse current (pA) C-Diode capacitance (pF) 50 5 2 1 0.1 0.2 0.5 1 2 5 10 1 VR-Reverse voltage (V) 0.1 –20 0 20 40 60 80 Ta-Ambient temperature (°C) Forward voltage vs. Ambient temperature Reverse voltage vs. Ambient temperature 35 IF=1mA VR-Reverse voltage (V) VF-Forward voltage (V) 0.90 0.80 0.70 0.60 –20 0 20 40 60 IR=10µA 30 25 20 –20 80 Ta-Ambient temperature (°C) 0 20 40 60 Ta-Ambient temperature (°C) —2— 80 1T413 Temperature coefficient of diode capacitance Diode capacitance vs. Ambient temperature VR=1V VR=2V VR=3V 1.02 VR=4V 1.01 VR=10V 1.00 0.99 2000 Temperature coefficient (ppm/°C) C (Ta)/C (25°C)-Diode capacitance 1.03 1000 500 200 100 50 0.98 –20 0 20 40 60 30 80 0.1 Ta-Ambient temperature (°C) 0.2 0.5 1.0 2.0 5.0 10.0 20.0 VR-Reverse voltage (V) Reverse current vs. Reverse voltage Series resistance vs. Reverse voltage 100 0.5 f=470MHz rs-Series resistance (Ω) 0.4 IR-Reverse current (pA) Ta=80°C 10 Ta=60°C 0.3 0.2 0.1 1 0.0 0.1 1 VR-Reverse voltage (V) Ta=25°C 0.1 1 3 10 30 VR-Reverse voltage (V) —3— 10 1T413 Package Outline Unit : mm 0.2 M A M-290 0.2 ± 0.05 10° MAX 1.7 ± 0.1 1.3 ± 0.1 A 0.8 ± 0.1 c b 10° MAX 0.7 ± 0.1 BASE METAL WITH PLATING c 0.11 ± 0.005 + 0.05 0.11 – 0.01 b 0.3 ± 0.025 0.05 0.3 –+ 0.02 PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER JEDEC CODE PACKAGE WEIGHT 0.002g SONY CODE M-290 Mark 1 X3 1 FCathode 2 FAnode —4— 2