CXG1134EN High Power SPDT Switch with Logic Control Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be operated by one CMOS control line. The Sony GaAs J-FET process is used for low insertion loss and on-chip logic circuit. 10 pin VSON (Plastic) Features • Low insertion loss: 0.25dB @900MHz, 0.35dB @1.9GHz • High linearity: IIP3 (typ.) = 70dBm • 1 CMOS compatible control line • Small package size: 10-pin VSON Applications • Cellular handsets • PDC, CDMA Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25°C) • Bias voltage VDD 7 • Control voltage • Operating temperature • Storage temperature Vctl Topr Tstg 5 –35 to +85 –65 to +150 V V °C °C GaAs MMICs are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E02330-PS CXG1134EN Block Diagram and Recommended Circuit GND (recommended) Rctl (1kΩ ) CTL 6 5 7 4 Cbypass (100pF) GND Cbypass (100pF) VDD RF1 CRF (100pF) GND 8 GND 9 F1 F2 GND 2 GND F4 F3 10 RF2 3 1 CRF (100pF) RF3 CRF (100pF) GND (recommended) When using this IC, the following external parts should be used: Rctl: This resistor is used to improve ESD performance. 1kΩ is recommended. This capacitor is used for RF de-coupling and must be used for all applications. CRF: 100pF is recommended. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. Truth Table On Pass CTL F1 F2 RF1 – RF2 H ON OFF OFF ON RF1 – RF3 L OFF ON OFF DC Bias Condition Item F3 ON (Ta = 25°C) Min. Typ. Max. Unit Vctl (H) 2.2 3.0 3.6 V Vctl (L) 0 — 0.4 V 2.7 3.0 3.6 V VDD –2– F4 CXG1134EN Electrical Characteristics Item (Ta = 25°C) Symbol Condition Min. Typ. Max. Unit 0.25 0.50 dB Insertion loss IL 900MHz Isolation ISO. 900MHz VSWR VSWR 1.2 1.4 — 2fo 900MHz ∗1 –75 –60 dBc 3fo ∗1 –75 –60 dBc 1dB compression input power P1dB VDD = 3.0V, 0/3V control Switching speed TSW Control current Ictl Bias current IDD Harmonics 28 32 32 dB dBm 35 2 5 µs Vctl (High) = 3V 10 30 µA VDD = 3V 50 100 µA ∗1 Pin = 30dBm, 900MHz, VDD = 3.0V, 0/3V control –3– CXG1134EN Package Outline Unit: mm 10PIN VSON(PLASTIC) + 0.1 0.8 – 0.05 0.6 2.5 0.05 S A 2.5 5 B x2 0.4 0.8 0.35 ± 0.1 0.15 S B x4 0.15 S A B 0.03 ± 0.03 (Stand Off) 0.05 M S AB 0.225 ± 0.03 1 0.2 ± 0.01 PIN 1 INDEX 2.7 6 10 0.5 ± 0.2 0.35 ± 0.1 S Solder Plating 0.13 ± 0.025 + 0.09 0.14 – 0.03 TERMINAL SECTION NOTE: 1) The dimensions of the terminal section apply to the ranges of 0.1mm and 0.25mm from the end of a terminal. PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.013g SONY CODE VSON-10P-01 LEAD PLATING SPECIFICATIONS ITEM SPEC. LEAD MATERIAL COPPER ALLOY SOLDER COMPOSITION Sn-Bi Bi:1-4wt% PLATING THICKNESS 5-18µm –4– Sony Corporation