CXG1106EN High Power 2 × 4 Antenna Switch MMIC with Integrated Control Logic Description The CXG1106EN is a high power antenna switch MMIC for PDC 800MHz and 1.5GHz handsets. The CXG1106EN is suited to connect Tx/Rx to one of 4 antennas. The CXG1106EN has on-chip logic circuit for operation with 3 CMOS inputs. The Sony JFET process is used for low insertion loss and low voltage operation. 16 pin VSON (Plastic) Features • Low insertion loss: 0.25dB @900MHz, 0.35dB @1.5GHz • High linearity: Harmonic < – 65dBc • CMOS compatible input control • Small package: 16-pin VSON (2.7mm × 3.5mm) Applications 2 × 4 antenna switch for digital cellular such as PDC handsets Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25°C) • Bias voltage VDD • Control voltage • Operating temperature • Storage temperature VDD Topr Tstg 7 5 –35 to +85 –65 to +150 V V °C °C GaAs MMICs are ESD sensitive devices. Special handling precautions are required. The actual ESD test data will be available later. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E00X14C2Z-PS CXG1106EN Block Diagram/Pin Configuration F8 9 8 RF3 7 GND 6 RF2 5 GND 4 RF1 3 GND1 CTLC 15 2 VDD CTLB 16 1 CTLA GND4 RF4 10 F1 GND 11 F2 F3 F4 F7 RF5 12 F5 F6 GND 13 F9 F10 RF6 14 Truth Table On Pass CTLA CTLB CTLC F1 F2 F3 F4 F5 F6 F7 F8 F9 F10 RF3 – RF2 H — L L H L H L L L H H H RF3 – RF4 H — H H L H L L L H L H H RF5 – RF2 L L L H L H L L L L H H H RF5 – RF4 L L H L H L H L L H L H H RF5 – RF6 L H L L L L L H L H H L H RF5 – RF1 L H H L L L L L H H H H L –2– CXG1106EN Recommended Circuit 9 Z4 GND4 RF3 8 CRF (100pF) RF4 10 7 11 6 GND CRF (100pF) GND RF2 CRF (100pF) RF5 12 5 13 4 GND CRF (100pF) GND RF1 CRF (100pF) RF6 14 3 15 2 16 1 Z1 GND1 CRF (100pF) CTLC Rctl (1kΩ) Cbypass (100pF) CTLB Rctl (1kΩ) Cbypass (100pF) VDD Cbypass (100pF) CTLA Cbypass (100pF) When using this IC, the following external components should be used: Rctl: This resistor is used to improve ESD performance. 1kΩ is recommended. CRF: This capacitor is used for RF decoupling and must be used for all application. 100pF is recommended. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. DC Bias Condition Item (Ta = 25°C) Min. Typ. Max. Unit VDD +2.4 +3.0 +3.6 V Vctl (H) +2.0 +3.0 +3.6 V Vctl (L) 0 +0.4 V –3– CXG1106EN Electrical Characteristics 1 Item Insertion loss Isolation VSWR (Ta = 25°C) Symbol IL ISO. Port Harmonics 3fo ±50kHz ACP ±100kHz Min. Typ. Max. Unit RF3 – RF2 0.25 0.50 dB RF3 – RF4 ∗1 0.25 0.50 dB RF5 – RF2 ∗2 0.45 0.70 dB RF5 – RF4 ∗2 0.55 0.80 dB RF5 – RF6 ∗2 0.35 0.60 dB RF5 – RF1 ∗2 0.35 0.60 dB RF3 – RF2 ∗1 20 23 dB RF3 – RF4 ∗1 23 26 dB RF5 – RF2 ∗2 25 28 dB RF5 – RF4 ∗2 21 24 dB RF5 – RF6 ∗2 22 25 dB RF5 – RF1 ∗2 27 33 dB 1.2 1.6 — RF3 – RF2 50Ω ∗3 –75 –60 dBc RF3 – RF4 ∗3 –75 –60 dBc RF3 – RF2 ∗3 –67 –60 dBc RF3 – RF4 ∗3 –67 –60 dBc RF3 – RF2 ∗3 –67 –57 dBc RF3 – RF4 ∗3 –67 –57 dBc RF3 – RF2 ∗3 –75 –65 dBc RF3 – RF4 ∗3 –75 –65 dBc RF3 – RF2 VDD = 2.8V 33 35 dBm RF3 – RF4 VDD = 2.8V 33 35 dBm 2 µs VSWR 2fo Condition ∗1 1dB compression input power P1dB Switching speed TSW Bias current IDD VDD = 3.0V Control current Ictl Vctl (H) = 3V 0.45 0.75 40 70 mA µA ∗1 Pin = 29.5dBm, 0/3V control, VDD = 3.0V, 889MHz to 960MHz ∗2 Pin = 10dBm, 0/3V control, VDD = 3.0V, 810MHz to 885MHz ∗3 π/4-shifted DQPSK, Pin = 29.5dBm, 0/3V control, VDD = 3.0V, 889MHz to 960MHz, ACP (±50kHz) < – 70dBc, ACP (±100kHz) < – 75dBc, 2nd harmonic < – 75dBc, 3rd harmonic < – 75dBc –4– CXG1106EN Electrical Characteristics 2 Item Insertion loss Isolation VSWR (Ta = 25°C) Symbol IL ISO. Port Harmonics 3fo ±50kHz ACP ±100kHz Min. Typ. Max. Unit RF3 – RF2 0.40 0.65 dB RF3 – RF4 ∗1 0.35 0.60 dB RF5 – RF2 ∗2 0.60 0.85 dB RF5 – RF4 ∗2 0.80 1.05 dB RF5 – RF6 ∗2 0.40 0.65 dB RF5 – RF1 ∗2 0.40 0.65 dB RF3 – RF2 ∗1 17 20 dB RF3 – RF4 ∗1 21 24 dB RF5 – RF2 ∗2 24 27 dB RF5 – RF4 ∗2 19 22 dB RF5 – RF6 ∗2 18 21 dB RF5 – RF1 ∗2 25 31 dB 1.2 1.6 — RF3 – RF2 50Ω ∗3 –75 –60 dBc RF3 – RF4 ∗3 –75 –60 dBc RF3 – RF2 ∗3 –67 –60 dBc RF3 – RF4 ∗3 –67 –60 dBc RF3 – RF2 ∗3 –67 –57 dBc RF3 – RF4 ∗3 –67 –57 dBc RF3 – RF2 ∗3 –75 –65 dBc RF3 – RF4 ∗3 –75 –65 dBc RF3 – RF2 VDD = 2.8V 33 35 dBm RF3 – RF4 VDD = 2.8V 33 35 dBm 2 µs VSWR 2fo Condition ∗1 1dB compression input power P1dB Switching speed TSW Bias current IDD VDD = 3.0V Control current Ictl Vctl (H) = 3V 0.45 0.75 40 70 mA µA ∗1 Pin = 29.5dBm, 0/3V control, VDD = 3.0V, 1429MHz to 1453MHz ∗2 Pin = 10dBm, 0/3V control, VDD = 3.0V, 1477MHz to 1501MHz ∗3 π/4-shifted DQPSK, Pin = 29.5dBm, 0/3V control, VDD = 3.0V, 1429MHz to 1453MHz, ACP (±50kHz) < – 70dBc, ACP (±100kHz) < – 75dBc, 2nd harmonic < – 75dBc, 3rd harmonic < – 75dBc –5– CXG1106EN Unit: mm 16PIN VSON (PLASTIC) 0.9 MAX 0.6 3.5 0.05 S A 0.5 ± 0.2 2.7 2.5 0.35 ± 0.1 S B 2x 0.4 0.35 ± 0.1 0.2 S B 4x 1.4 0.2 S A B 0.03 ± 0.03 0.2 ± 0.01 0.23 ± 0.02 0.05 M S A-B Soldrer Plating 0.13 ± 0.025 + 0.09 0.14 – 0.03 NOTE: 1) The dimensions of the terminal section apply to the ranges of 0.1mm and 0.25mm from the end of a terminal. TERMINAL SECTION PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.02 g SONY CODE VSON-16P-01 16PIN VSON (PLASTIC) 0.9 MAX 0.6 3.5 0.05 S A B 0.5 ± 0.2 2.7 0.35 ± 0.1 S 2.5 2x 0.4 0.35 ± 0.1 0.2 S B 4x 1.4 0.2 ± 0.01 0.05 M S A-B 0.23 ± 0.02 0.2 S A B 0.03 ± 0.03 Package Outline Soldrer Plating 0.13 ± 0.025 + 0.09 0.14 – 0.03 NOTE: 1) The dimensions of the terminal section apply to the ranges of 0.1mm and 0.25mm from the end of a terminal. TERMINAL SECTION PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.02 g SONY CODE VSON-16P-01 LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SPEC. COPPER ALLOY SOLDER COMPOSITION Sn-Bi Bi:1-4wt% PLATING THICKNESS 5-18µm –6– Sony Corporation