SONY SLD1134VL

SLD1134VL
650nm Pulsation Red Laser Diode
Description
The SLD1134VL is a pulsation red laser diode
designed for DVD systems.
M-274
Features
• Low noise
• Standard package (φ5.6mm)
Application
DVD
Structure
• AlGaInP quantum well-structure laser diode
• PIN photo diode for optical power output monitor
Recommended Optical Power Output
4mW
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
Po
5
mW
• Reverse voltage
VR LD
2
V
PD
20
V
• Operating temperature Topr
–10 to +70 °C
• Storage temperature
Tstg
–40 to +85 °C
Pin Configuration
Connection Diagram
3
COMMON
PD
LD
2
2
1
1
3
1. LD Anode
2. PD Anode
3. Common
Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E98Y11-PS
SLD1134VL
Electrical and Optical Characteristics
Item
Threshold current
Operating current
Tc: Case temperature
Symbol
Conditions
Iop1
Iop2 ∗1
Operating voltage
Vop
PO = 4mW
Wavelength
λp
PO = 4mW
Positional
accuracy
Perpendicular
θ⊥
Parallel
θ//
Position
∆X, ∆Y, ∆Z
Angle
Typ.
Max.
Unit
65
80
mA
75
90
mA
120
mA
2.3
2.8
V
640
655
660
nm
25
35
40
degree
7
8.5
12
degree
±80
µm
±2
degree
±3
degree
0.7
mW/mA
Ith
PO = 4mW
Radiation
Angle
Min.
∆φ//
PO = 4mW
PO = 4mW
∆φ⊥
Differential efficiency
ηD
PO = 4mW
Astigmatism
AS
PO = 4mW
Monitor current
Imon
PO = 4mW
VR = 5V
0.15
0.4
10
0.05
0.1
µm
0.25
mA
∗1 Tc = 70°C
Handling Precautions
(1) Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 4W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS
use safety goggles that block infrared rays.
Usage of IR scopes, IR cameras and
fluorescent plates is also recommended for
monitoring laser beams safely.
Safety goggles for
protection from laser beam
Lens
Laser diode
Optical
material
IR fluorescent
plate
C
ATC
AP
Optical board
Optical power output control device
Temperature control device
(2) Prevention of surge current and electrostatic discharge
Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is
passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light
emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that
the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser
diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by
a human body. Be great careful about excess current and electrostatic discharge.
–2–
SLD1134VL
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
Tc = 0 25 60 70°C
Tc = 0 25 60 70°C
Far field pattern (FFP)
5
Po = 4mW
Tc = 25°C
θ⊥
Relative radiant intensity
Po – Optical output [mW]
4
Imon
3
2
1
θ//
0
0
20
40
60
80
100
0
–40
–20
0
20
40
IF – Forward current [mA]
0
Angle [degree]
0.2
Imon – Monitor current [mA]
Threshold current vs. Temperature characteristics
Monitor current vs. Temperature characteristics
200
0.2
100
10
–20
Imon – Monitor current [mA]
Ith – Threshold current [mA]
Po = 4mW
0.1
0
0
20
40
60
80
–20
Tc – Case temperature [°C]
0
20
40
Tc – Case temperature [°C]
–3–
60
80
SLD1134VL
Temperature dependence of spectrum
Po = 4mW
Tc = 70°C
Relative radiant intensity
Tc = 60°C
Tc = 25°C
Tc = 0°C
645
650
655
660
λp – Wavelength [nm]
–4–
665
670
675
SLD1134VL
Power output dependence of spectrum
Tc = 25°C
Relative radiant intensity
Po = 5mW
Po = 4mW
Po = 1mW
645
650
655
660
λp – Wavelength [nm]
–5–
665
670
675
SLD1134VL
Package Outline
Unit: mm
M-274
Reference
Slot
0.4
1.0
0.5
90°
3
1
2
0
φ5.6 – 0.025
φ4.4 MAX
φ3.7 MAX
φ1.0 MIN
1.2 ± 0.1
Reference
Plane
2 3 1
3 – φ0.45
∗Optical
Distance = 1.35 ± 0.08
6.5
LD Chip
& Photo
Diode
SONY CODE
2.6 MAX
0.5 MIN
∗1.26
0.25
Window Glass
PCD φ2.0
M-274
PACKAGE WEIGHT
EIAJ CODE
JEDEC CODE
–6–
0.3g