SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2. ∗1 MOCVD: Metal Organic Chemical Vapor Deposition ∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features • High power Recommended optical power output: Po = 0.5W • Low operating current: Iop = 0.75A (Po = 0.5W) Applications • Solid state laser excitation • Medical use • Material processes • Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 0.55 • Reverse voltage VR LD 2 PD 15 • Operating temperature (Tc) Topr –10 to +30 • Storage temperature Tstg –40 to +85 W V V °C °C Pin Configuration 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93205A81-PS SLD322V Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C) Item Symbol Min. Conditions Typ. Max. Unit 0.18 0.3 A Threshold current Ith Operating current Iop PO = 0.5W 0.75 1.2 A Operating voltage Wavelength∗1 Vop PO = 0.5W 2.1 3.0 V λp PO = 0.5W 790 840 nm Monitor current Imon PO = 0.5W VR = 10V 0.15 0.8 3.0 mA 20 30 40 degree 4 9 17 degree ±50 µm ±3 degree Perpendicular Radiation angle (F. W. H. M.∗) Positional accuracy θ⊥ Parallel θ// Position ∆X, ∆Y Angle ∆φ⊥ ηD Differential efficiency PO = 0.5W PO = 0.5W PO = 0.5W 0.5 0.9 W/A ∗ F. W. H. M. : Full Width at Half Maximum ∗1 Wavelength Selection Classification Type Wavelength (nm) SLD322V-1 795 ± 5 SLD322V-2 810 ± 10 SLD322V-3 830 ± 10 Type Wavelength (nm) SLD322V-21 798 ± 3 SLD322V-24 807 ± 3 SLD322V-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Lens Laser diode Optical material Safety goggles for protection from laser beam IR fluorescent plate C ATC AP Optical boad Optical power output control device temperature control device –2– SLD322V Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics 1000 Po – Optical power output [mW] Po – Optical power output [mW] TC = 0°C 800 TC = 0°C TC = 25°C 600 TC = –10°C TC = 30°C 400 200 0 200 400 600 800 500 TC = –10°C TC = 30°C 250 0 1000 TC = 25°C 0 0.5 1.0 IF – Forward current [mA] Imon – Monitor current [mA] Threshold current vs. Temperature characteristics Power dependence of far field pattern (Parallel to junction) 1000 Radiation intensity (optional scale) 500 PO = 500mW PO = 400mW PO = 300mW PO = 200mW PO = 100mW 100 –10 0 10 20 30 –90 –60 –30 0 30 60 90 Tc – Case temperature [°C] Angle [degree] Power dependence of far field pattern (Perpendicular to junction) Temperature dependence of far field pattern (Parallel to junction) –90 –60 –30 0 PO = 500mW Radiation intensity (optional scale) TC = 25°C Radiation intensity (optional scale) Ith – Threshold current [mA] TC = 25°C PO = 500mW PO = 400mW PO = 300mW PO = 200mW PO = 100mW 30 60 90 TC = 25°C TC = 10°C TC = –5°C –90 Angle [degree] –60 –30 0 30 Angle [degree] –3– 60 90 SLD322V Temperature dependence of far field pattern (Perpendicular to junction) Dependence of wavelength 820 Po = 500mW λp – Wavelength [nm] Radiation intensity (optional scale) PO = 500mW TC = 10°C –60 –30 0 30 60 790 –10 90 Angle [degree] ηD – Differential efficiency [mW/mA] 1.0 0.5 –10 0 10 0 10 20 Tc – Case temperature [°C] Differential efficiency vs. Temperature characteristics 0 800 TC = 25°C TC = –5°C –90 810 20 30 Tc – Case temperature [°C] –4– 30 SLD322V Power dependence of spectrum 1.0 1.0 Tc = 25°C Po = 0.2W Tc = 25°C Po = 0.3W 0.8 Relative radiant intensity Relative radiant intensity 0.8 0.6 0.4 0.2 0.6 0.4 0.2 796 798 800 802 804 796 798 Wavelength [nm] 1.0 802 804 1.0 Tc = 25°C Po = 0.4W Tc = 25°C Po = 0.5W 0.8 Relative radiant intensity 0.8 Relative radiant intensity 800 Wavelength [nm] 0.6 0.4 0.2 0.6 0.4 0.2 796 798 800 802 804 796 Wavelength [nm] 798 800 802 Wavelength [nm] –5– 804 SLD322V Temperature dependence of spectrum (Po = 0.5W) 1.0 1.0 Tc = 0°C Tc = –10°C 0.8 Relative radiant intensity Relative radiant intensity 0.8 0.6 0.4 0.4 0.2 0.2 785 0.6 790 795 800 805 810 785 815 790 795 800 805 1.0 Tc = 30°C 0.8 Relative radiant intensity 0.8 Relative radiant intensity 815 1.0 Tc = 25°C 0.6 0.4 0.2 785 810 Wavelength [nm] Wavelength [nm] 0.6 0.4 0.2 790 795 800 805 810 815 785 Wavelength [nm] 790 795 800 805 Wavelength [nm] –6– 810 815 SLD322V Unit: mm M-248 (LO-11) Reference Slot 0.4 1.0 3 2 1 Photo Diode 0 φ9.0 – 0.015 φ7.7 MAX Reference Plane LD Chip 3 – φ0.45 7.0 MAX φ3.5 1.5 3.4 MAX 0.6 MAX φ6.9 MAX Window Glass ∗2.45 Package Outline ∗Optical Distance = 2.55 ± 0.05 PCD φ2.54 SONY CODE M-248 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –7– 1.2g