SLD1231VL High Power Red Laser Diode Preliminary For the availability of this product, please contact the sales office. Package Outline Unit : mm M-274 Reference Slot 1.0 0.4 Description The SLD1231VL is a short wavelength high power laser diode, created as a light source for the nextgeneration high density magneto-optical discs. 0.5 90° 3 Features • Red visible light (685nm) • Longitudinal single mode • High power (Recommended optical power output: 30mW) 2 1 0 φ5.6 – 0.025 0.5 MIN ∗1.26 1.2 ± 0.1 Reference Plane LD Chip & Photo Diode Structure • AlGaInP quantum well structure laser diode 2 3 1 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.08 6.5 Applications Magneto-optical discs φ4.4 MAX φ3.7 MAX φ1.0 MIN 2.6 MAX 0.25 Window Glass PCD φ2.0 Recommended Optical Power Output 30mW Absolute Maximum Ratings • Optical power output Po • Reverse voltage VR • Operating temperature • Storage temperature 35 mW LD 2 V PD 15 V Topr –10 to +50 °C Tstg –40 to +85 °C Connection Diagram Pin Configuration 3 COMMON 2 LD PD 2 1 1 3 1. LD anode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– PE95313-PP SLD1231VL Electrical and Optical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 55 70 mA Threshold current Ith Operating current Iop Po = 30mW 95 120 mA Operating voltage Vop Po = 30mW 2.4 3.0 V Wavelength λp Po = 30mW 670 685 699 nm Perpendicular θ⊥ Po = 30mW 19 23 27 degree Parallel θ// Po = 30mW 6 9 12 degree Position ∆X, ∆Y, ∆Z ±80 µm Radiation angle Positional accuracy ∆φ⊥ Po = 30mW ±3 degree ∆φ// Po = 30mW ±3 degree Differential efficiency SE Po = 30mW 0.60 1.0 mW/mA Astigmatism As Po = 30mW 5 10 µm Angle 0.15 Handling Precautions (1) Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Safety goggles for protection from laser beam Laser diode Lens Optical material IR fluorescent plate Optical board Optical power output control device Temperature control device (2) Prevention of surge current and electrostatic discharge Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by a human body. Be great careful about excess current and electrostatic discharge. –2– SLD1231VL Example of Representative Characteristics Optical power output vs. Forward current characteristics Power dependence of far field pattern (Perpendicular to junction) 40 TC = 25°C TC = 0°C 30 Relative radiant intensity Po — Optical power output [mW] TC = 25°C TC = 50°C 20 10 Po = 30mW Po = 20mW Po = 10mW Po = 5mW 0 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 Angle [degree] IF — Forward current [mA] Power dependence of far field pattern Threshold current vs. Temperature characteristics (Parallel to junction) 100 50 0 –20 Relative radiant intensity Ith — Threshold current [mA] TC = 25°C –10 0 10 20 30 40 50 60 Po = 30mW Po = 20mW Po = 10mW Po = 5mW –60 Tc — Case temperature [°C] –40 –20 0 20 Angle [degree] –3– 40 60 SLD1231VL Power dependence of spectrum Tc = 25°C Po = 30mW Relative radiant intensity Po = 20mW Po = 10mW Po = 5mW 680 685 690 λ — Wavelength [nm] –4– 695 SLD1231VL Temperature dependence of spectrum Po = 30mW Relative radiant intensity Tc = 50°C Tc = 25°C Tc = 0°C 660 670 680 690 λ — Wavelength [ nm] –5– 700 710