SLD326YT 4W High Power Laser Diode Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 4.0W • High-optical power output density: 4W/400µm (Emitting line width) Equivalent Circuit TE Cooler Applications • Solid state laser excitation • Medical use • Material processing • Measurement Case PD TH Structure AlGaAs quantum well structure laser diode 1 Operating Lifetime MTTF 10,000H (effective value) at Po = 4.0W, Tth = 25°C Absolute Maximum Ratings (Tth = 25°C) • Optical power output PO 4.4 • Reverse voltage VRLD 2 PD 15 • Operating temperature (Tth) Topr –10 to +30 • Storage temperature Tstg –40 to +85 LD W V V °C °C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 3 4 5 6 7 8 9 10 Pin Configuration (Top View) No. Function 1 TE cooler (negative) 2 — 3 Case 4 Laser diode (anode) 5 Thermistor 6 Thermistor 7 Laser diode (cathode) 8 Photo diode (anode) 9 Photo diode (cathode) 10 TE cooler (positive) Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E95Z12B01-PS SLD326YT Electrical and Optical Characteristics Item (Tth = Thermistor temperature, Tth = 25°C) Symbol Conditions Threshold current Ith Operating current Iop PO = 4.0W Operating voltage Wavelength∗ Vop PO = 4.0W λP PO = 4.0W Perpendicular Radiation angle Positional accuracy θ⊥ Parallel θ// Position ∆X, ∆Y Angle ∆φ⊥ Min. 4.0 Typ. Max. Unit 1.0 2.0 A 5.5 8.0 A 2.4 2.8 V 840 nm 790 20 30 40 degree 5 10 14 degree ±100 µm ±3 degree ±4 degree PO = 4.0W PO = 4.0W ∆φ// Differential efficiency ηD PO = 4.0W 0.5 0.85 1.5 W/A Monitor current Imon PO = 4.0W VR = 10V 0.2 1.5 4.0 mA Thermistor resistance Rth Tth = 25°C 10 kΩ ∗Wavelength Selection Type Wavelength (nm) SLD326YT-1 795 ± 5 SLD326YT-2 810 ± 10 SLD326YT-3 830 ± 10 Type∗ Wavelength (nm) SLD326YT-21 798 ± 3 SLD326YT-24 807 ± 3 SLD326YT-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 10W. However the optical power density of the laser beam at the diode chip reaches 1.5MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate Optical board Optical power output control device Temperature control device –2– SLD326YT Example of Representative Characteristics Optical power output vs. Forward current characteristics Far field pattern 1.0 5 Tth = 25°C PO = 4.0W 0.8 4 Relative radiant intensity PO–Optical power output [W] Tth = 25°C 3 2 0.6 θ⊥ 0.4 θ// 0.2 1 0 1.5 3 4.5 6 –40 7.5 –20 0 20 40 IF–Forward current [A] Angle [degree] Oscillation wavelength Thermistor characteristics 1.0 Tth = 25°C PO = 4.0W 50 Rth–Thermistor resistance [kΩ] Relative radiant intensity 0.8 0.6 0.4 0.2 792 796 800 804 10 5 808 0 –10 0 Wavelength [nm] 10 20 30 40 50 60 70 Tth–Thermistor temperature [°C] TE cooler characteristics TE cooler characteristics 20 20 40 15 30 ∆TvsV T = 4A 20 10 3A 2A 5 10 1A 1A 2A 3A 20 40 ∆TvsV T = 4A 30 10 2A 10 60 5 1A 1A 0 80 2A ∆TvsQ T = 4A 3A 0 0 ∆T–Temperature difference [°C] 15 3A 20 ∆TvsQ T = 4A 0 0 Q–Absorbed heat [W] Tc = 25°C VT–Pin voltage [V] Q–Absorbed heat [W] Tc = 33°C 20 40 VT–Pin voltage [V] 40 60 0 80 ∆T–Temperature difference [°C] ∆T : Tc – Tth Tth : Thermistor temperature Tc : Case temperature ∆T : Tc – Tth Tth : Thermistor temperature Tc : Case temperature –3– SLD326YT Unit: mm M-288 + 0.08 4 – φ4.04 – 0.03 31.75 ± 0.50 – 1.0 R1 .0 R1 .0 – 4 4 Window Glass φ5.0 12.8 19.05 ± 0.15 38.60 ± 0.15 9 – φ1.0 2.54 44.45 ± 0.50 LD Chip 0.9 MAX 3.0 Reference Plane 17.8 ± 0.3 26.4 14.9 ± 0.3 3.6 31.75 ± 0.50 17.0 Package Outline 19.30 ± 0.15 SONY CODE M-288 EIAJ CODE JEDEC CODE PACKAGE WEIGHT –4– 150g Sony Corporation