SLD237VL Index-Guided High Power AlGaAs Laser Diode For the availability of this product, please contact the sales office. Description The SLD237VL is a high-power, index-guided AlGaAs laser diode. M-274 Features • High power • Low current consumption • Small astigmatism • Small package (φ5.6mm) Applications Optical pickup for CD-R/RW Structure AlGaAs quantum well structured laser diode Recommended Operating Optical Power Output Absolute Maximum Ratings • Optical power output Pomax • Reverse voltage VR • Operating temperature • Storage temperature Topr Tstg Connection Diagram 80mW 90 mW (CW) 130 mW (Pulse) Pulse width 200ns or less Duty 50% or less LD 2 –10 to +70 –40 to +85 V °C (Pulse Operation) °C Pin Configuration COMMON 3 LD 2 1 1 3 1. LD anode 2. N.C. 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convery any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E00852B19-PS SLD237VL Optical and Electrical Characteristics (Tc = 25°C) Item Tc: Case temperature Conditions Symbol Min. Typ. Max. Unit Threshold current Ith CW 25 30 40 mA Operating current Iop CW, Po = 80mW 90 110 130 mA Operating voltage Vop CW, Po = 80mW — 2.0 2.3 V Wavelength λp CW, Po = 80mW 779 784 789 nm Differential efficiency ηD CW, Po = 80mW 0.7 1.0 1.3 mW/mA Paralell θ// CW, Po = 80mW 7.4 8.3 9.5 deg Perpendicular θ⊥ CW, Po = 80mW 15.0 18.0 21.0 deg As CW, Po = 80mW –6 — 0 µm ∆φ// CW, Po = 80mW — — ±1.6 deg ∆φ⊥ CW, Po = 80mW — — ±2.5 deg — — ±80 µm Radiation angle Astigmatism Positional accuracy Angle Position ∆X, ∆Y, ∆Z –2– SLD237VL Notes on Operation Care should be taken for the following points when using this product. (1) This product corresponds to a Class 3B product under IEC60825-1 and JIS standard C6802 "Laser Product Emission Safety Standards". LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM MAXIMUM OUTPUT WAVELENGTH 350 mW 600 - 950 nm CLASS III b LASER PRODUCT Sony Corporation AVOID EXPOSURE Laser radiation is emitted from this aperture. 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan (2) Eye protection against laser beams Take care not to allow laser beams to enter your eyes under any circumstances. For observing laser beams, ALWAYS use safety goggles that block laser beams. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) Gallium Arsenide This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. In addition, the following disposal methods are recommended when disposing of this product. 1. Engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. Managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) Prevention of surge current and electrostatic discharge Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. Therefore, be extremely careful about overcurrent and electrostatic discharge. (5) Use for special applications This product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. Also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. –3– SLD237VL Unit: mm M-274 Reference Slot 0.4 1.0 0.5 90˚ 3 1 2 0 φ5.6 – 0.025 φ4.4 MAX 0.5 MIN ∗1.26 φ3.7 MAX φ1.0 MIN 1.2 ± 0.1 Reference Plane 2 3 1 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.08 M-274 6.5 LD Chip & Photo Diode SONY CODE 2.6 MAX Window Glass 0.25 Package Outline PCD φ2.0 PACKAGE MASS 0.3g EIAJ CODE JEDEC CODE –4– Sony Corporation