SONY SLD304B

SLD304B
Block-type 1000mW High Power Laser Diode
Description
The SLD304B is a high power laser diode mounted on a 3 × 3 × 5mm Copper block.
It is ideal for applications which require a minimal distance between the laser facet and external optical parts.
Features
• Compact size
• High power output
• Hole for thermistor
3 × 3 × 5mm block
Po = 1000mW
Applications
• Solid state laser excitation
• Medical use
Structure
GaAlAs double hetero-type laser diode
Absolute Maximum Ratings (Tc = 15°C)
• Optical power output
• Recommended optical power output
• Reverse voltage
• Operating temperature
• Storage temperature
Po
1000
Po
900
VR LD
2
Topr –10 to +30
Tstg –40 to +85
mW
mW
V
°C
°C
Pin Configuration
No.
Function
1
LD cathode
2
LD anode
1 LD cathode
2 LD anode
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E89106A81-PS
SLD304B
Electrical and Optical Characteristics
Item
(Tc = 15°C)
Symbol
Conditions
Min.
Typ.
Max.
Unit
450
700
mA
Threshold current
Ith
Operating current
Iop
PO = 900mW
1400
2000
mA
Operating voltage
Vop
PO = 900mW
2.1
3.0
V
Wavelength
λp
PO = 900mW
840
nm
Radiation angle Perpendicular to junction
(F. W. H. M.∗)
Parallel to junction
θ⊥
Positional
accuracy
Position
Angle
Differential efficiency
770
PO = 900mW
θ//
28
40
13
17
∆X
±300
∆Y, ∆Z
PO = 900mW
±100
∆φ⊥
ηD
±3
PO = 900mW
∗ F. W. H. M. : Full Width at Half Maximum
–2–
0.5
0.8
degree
µm
degree
mW/mA
SLD304B
Example of Representative Characteristics
Optical power output vs. Forward current
Threshold current vs. Temperature characteristics
1000
1000
Tc = –10°C
Ith – Threshold current [mA]
PO – Optical power output [mW]
Tc = 0°C
Tc = 30°C
Tc = 15°C
Tc = 25°C
500
500
100
–10
0
10
20
30
Tc – Case temperature [°C]
0
0
500
1000
1500
2000
IF – Forward current [mA]
Power dependence of far field pattern
Power dependence of near field pattern
Tc = 15°C
Radiation intensity (optional scale)
Tc = 15°C
(Parallel to junction)
Radiation intensity (optional scale)
PO = 900mW
PO = 500mW
PO = 200mW
PO = 50mW
PO = 900mW
PO = 800mW
PO = 600mW
PO = 400mW
PO = 200mW
200µm
–30
–20
–10
0
10
20
30
Angle [degree]
Oscillation wavelength vs. Temperature characteristics
Differential efficiency vs. Temperature characteristics
830
ηD – Differential efficiency [mW/mA]
λp – Oscillation wavelength [nm]
PO = 900mW
820
810
800
790
780
–10
1.0
0.5
0
0
10
20
Tc – Case temperature [°C]
30
40
–10
0
10
20
Tc – Case temperature [°C]
–3–
30
40
SLD304B
Optical power output vs. Operating current
Power dependence of polarization ratio
7
TC = 15°C
Pulse width = 1µs
Duty = 10%
Tc = 15°C
300
Po – Optical power output [W]
Polarization ratio
6
200
100
PULSE
5
4
3
2
CW
1
0
0
0
200
400
600
800
1000
1200
Pulse width dependence of COD∗ power
10
Duty = 10%
TC = 15°C
COD output [W]
1.0
0.5
0.1
0.1
0.5
1.0
5.0
10
1
2
3
4
5
Iop – Operating current [A]
Po – Optical power output [mW]
5.0
0
50
100
Pulse width [µs]
∗ COD (Catastrophic Optical Damage)
–4–
6
7
SLD304B
Power Dependence of Wavelength
800
Reletive radiant intensity
Tc = 15°C
Po = 400mW
Reletive radiant intensity
Tc = 15°C
Po = 200mW
805
810
800
Wavelength [nm]
805
Reletive radiant intensity
Tc = 15°C
Po = 800mW
Reletive radiant intensity
Tc = 15°C
Po = 600mW
800
805
810
800
Wavelength [nm]
Reletive radiant intensity
805
805
Wavelength [nm]
Tc = 15°C
Po = 1000mW
800
810
Wavelength [nm]
810
Wavelength [nm]
–5–
810
SLD304B
Temperature Dependence of Wavelength (PO = 90mW)
795
Reletive radiant intensity
Tc = 0°C
Reletive radiant intensity
Tc = –5°C
805
815
795
Wavelength [nm]
805
Reletive radiant intensity
Tc = 10°C
Reletive radiant intensity
Tc = 5°C
795
805
815
795
Wavelength [nm]
805
815
Wavelength [nm]
Reletive radiant intensity
Tc = 20°C
Reletive radiant intensity
Tc = 15°C
795
815
Wavelength [nm]
805
815
795
Wavelength [nm]
805
Wavelength [nm]
–6–
815
SLD304B
Package Outline
Unit: mm
M – 261
5.0 ± 0.1
3.0 ± 0.1
1.5
0.2
1.7
0.3
Ø1.5
for Thermistor
LD Chip
1.0
Ceramic
1.5
Contact Plate (LD Cathode)
0.2
1.8
3.0 ± 0.1
Body (LD Anode)
PACKAGE STRUCTURE
SONY CODE
M-261
PACKAGE WEIGHT
EIAJ CODE
JEDEC CODE
–7–
1g