SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 90mW Applications • Solid state laser excitation • Medical use Structure GaAlAs double-hetero-type laser diode Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 100 • Reverse voltage VR LD 2 PD 15 • Operating temperature Topr –10 to +50 • Storage temperature Tstg –40 to +85 mW V V °C °C Pin Configuration 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E88057F81-PS SLD301V Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C) Item Symbol Min. Conditions Typ. Max. Unit 150 200 mA Threshold current Ith Operating current Iop PO = 90mW 250 400 mA Operating voltage Wavelength∗1 Vop PO = 90mW 1.9 3.0 V λp PO = 90mW 840 nm Monitor current Imon PO = 90mW VR = 10V Perpendicular Radiation angle (F. W. H. M.∗) Positional accuracy θ⊥ Parallel θ// Position ∆X, ∆Y Angle ∆φ⊥ ηD Differential efficiency 770 mA 0.15 PO = 90mW 28 40 degree 12 17 degree ±50 µm ±3 degree PO = 90mW PO = 90mW 0.65 0.9 mW/mA ∗ F. W. H. M. : Full Width at Half Maximum ∗1 Wavelength Selection Classification Type Wavelength (nm) SLD301V-1 785 ± 15 SLD301V-2 810 ± 10 SLD301V-3 830 ± 10 Type Wavelength (nm) SLD301V-21 798 ± 3 SLD301V-24 807 ± 3 SLD301V-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1mW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollinated laser diode beams are fairly safe at a laser diode. Generally speaking, however, it is best NOT to LOCK into laser beams, under any circumstances. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Lens Laser diode Optical material Safety goggles for protection from laser beam IR fluorescent plate C ATC AP Optical boad Optical power output control device temperature control device –2– SLD301V Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics Po – Optical power output [mW] Po – Optical power output [mW] 200 TC = 0°C TC = 25°C 100 TC = –10°C TC = 50°C TC = –10°C TC = 50°C 50 0 0 TC = 0°C TC = 25°C 100 0 0.05 0.1 Imon – Monitor current [mA] 0 250 500 IF – Forward current [mA] Power dependence of far field pattern (parallel to junction) Threshold current vs. Temperature characteristics 1000 Radiation intensity (optional scale) 500 100 –10 0 10 20 30 40 PO = 90mW PO = 60mW PO = 30mW 50 Tc – Case temperature [°C] –30 –20 –10 0 10 20 30 Angle [degree] Power depecdence of near field pattern Oscillation wavelength vs. Temperature characteristics 830 PO = 90mW PO = 90mW PO = 75mW PO = 50mW PO = 25mW λp – Oscillation wavelength [nm] TC = 25°C Radiation intensity (optional scale) Ith – Threshold current [mA] TC = 25°C 820 810 800 790 780 –10 50µm 0 10 20 30 Tc – Case temperature [°C] –3– 40 50 SLD301V Differential efficiency vs. Temperature characteristics Power dependence of polarization ratio 40 1.5 30 1.0 Polarization ratio ηD – Differential efficiency [mW/mA] Tc = 25°C 20 0.5 10 0 –10 0 10 20 30 40 0 50 Tc – Case temperature [°C] 0 20 40 60 80 100 Po – Optical power output [mW] –4– 120 SLD301V Power dependence of wavelength (Spectrum) Relative radiant intensity Tc = 25°C Po = 40mW Relative radiant intensity Tc = 25°C Po = 20mW 800 805 810 800 Wavelength [nm] 805 810 Wavelength [nm] Relative radiant intensity Tc = 25°C Po = 80mW Relative radiant intensity Tc = 25°C Po = 60mW 800 805 810 800 Wavelength [nm] Relative radiant intensity Tc = 25°C Po = 100mW 800 805 805 Wavelength [nm] 810 Wavelength [nm] –5– 810 SLD301V Temperature dependence of wavelength (Po = 90mW) Relative radiant intensity Tc = 12°C Relative radiant intensity Tc = –6°C 805 815 825 805 Wavelength [nm] 815 825 Wavelength [nm] Relative radiant intensity Tc = 35°C Relative radiant intensity Tc = 23°C 805 815 825 805 Wavelength [nm] Relative radiant intensity Tc = 45°C 805 815 815 Wavelength [nm] 825 Wavelength [nm] –6– 825 SLD301V Unit: mm M-248 (LO-11) Reference Slot 0.4 1.0 3 2 1 Photo Diode 0 φ9.0 – 0.015 φ7.7 MAX Reference Plane LD Chip 3 – φ0.45 7.0 MAX φ3.5 1.5 3.4 MAX 0.6 MAX φ6.9 MAX Window Glass ∗2.45 Package Outline ∗Optical Distance = 2.55 ± 0.05 PCD φ2.54 SONY CODE M-248 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –7– 1.2g