SONY SLD301V

SLD301V
100mW High Power Laser Diode
Description
The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD.
MOCVD: Metal Organic Chemical Vapor Deposition
Features
• High power
Recommended power output
• Low operating current
Po = 90mW
Applications
• Solid state laser excitation
• Medical use
Structure
GaAlAs double-hetero-type laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
Po
100
• Reverse voltage
VR LD
2
PD
15
• Operating temperature
Topr
–10 to +50
• Storage temperature
Tstg
–40 to +85
mW
V
V
°C
°C
Pin Configuration
2
1
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E88057F81-PS
SLD301V
Electrical and Optical Characteristics
(Tc: Case temperature, Tc = 25°C)
Item
Symbol
Min.
Conditions
Typ.
Max.
Unit
150
200
mA
Threshold current
Ith
Operating current
Iop
PO = 90mW
250
400
mA
Operating voltage
Wavelength∗1
Vop
PO = 90mW
1.9
3.0
V
λp
PO = 90mW
840
nm
Monitor current
Imon
PO = 90mW
VR = 10V
Perpendicular
Radiation angle
(F. W. H. M.∗)
Positional accuracy
θ⊥
Parallel
θ//
Position
∆X, ∆Y
Angle
∆φ⊥
ηD
Differential efficiency
770
mA
0.15
PO = 90mW
28
40
degree
12
17
degree
±50
µm
±3
degree
PO = 90mW
PO = 90mW
0.65
0.9
mW/mA
∗ F. W. H. M. : Full Width at Half Maximum
∗1 Wavelength Selection Classification
Type
Wavelength (nm)
SLD301V-1
785 ± 15
SLD301V-2
810 ± 10
SLD301V-3
830 ± 10
Type
Wavelength (nm)
SLD301V-21
798 ± 3
SLD301V-24
807 ± 3
SLD301V-25
810 ± 3
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1mW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollinated
laser diode beams are fairly safe at a laser
diode. Generally speaking, however, it is best
NOT to LOCK into laser beams, under any
circumstances. For observing laser beams,
ALWAYS use safety goggles that block infrared
rays. Usage of IR scopes, IR cameras and
fluorescent plates is also recommended for
monitoring laser beams safely.
Lens
Laser diode
Optical
material
Safety goggles for
protection from
laser beam
IR fluorescent plate
C
ATC
AP
Optical boad
Optical power output control device
temperature control device
–2–
SLD301V
Example of Representative Characteristics
Optical power output vs.
Forward current characteristics
Optical power output vs. Monitor current characteristics
Po – Optical power output [mW]
Po – Optical power output [mW]
200
TC = 0°C
TC = 25°C
100
TC = –10°C
TC = 50°C
TC = –10°C
TC = 50°C
50
0
0
TC = 0°C
TC = 25°C
100
0
0.05
0.1
Imon – Monitor current [mA]
0
250
500
IF – Forward current [mA]
Power dependence of far field pattern
(parallel to junction)
Threshold current vs. Temperature characteristics
1000
Radiation intensity (optional scale)
500
100
–10
0
10
20
30
40
PO = 90mW
PO = 60mW
PO = 30mW
50
Tc – Case temperature [°C]
–30
–20
–10
0
10
20
30
Angle [degree]
Power depecdence of near field pattern
Oscillation wavelength vs. Temperature characteristics
830
PO = 90mW
PO = 90mW
PO = 75mW
PO = 50mW
PO = 25mW
λp – Oscillation wavelength [nm]
TC = 25°C
Radiation intensity (optional scale)
Ith – Threshold current [mA]
TC = 25°C
820
810
800
790
780
–10
50µm
0
10
20
30
Tc – Case temperature [°C]
–3–
40
50
SLD301V
Differential efficiency vs. Temperature characteristics
Power dependence of polarization ratio
40
1.5
30
1.0
Polarization ratio
ηD – Differential efficiency [mW/mA]
Tc = 25°C
20
0.5
10
0
–10
0
10
20
30
40
0
50
Tc – Case temperature [°C]
0
20
40
60
80
100
Po – Optical power output [mW]
–4–
120
SLD301V
Power dependence of wavelength (Spectrum)
Relative radiant intensity
Tc = 25°C
Po = 40mW
Relative radiant intensity
Tc = 25°C
Po = 20mW
800
805
810
800
Wavelength [nm]
805
810
Wavelength [nm]
Relative radiant intensity
Tc = 25°C
Po = 80mW
Relative radiant intensity
Tc = 25°C
Po = 60mW
800
805
810
800
Wavelength [nm]
Relative radiant intensity
Tc = 25°C
Po = 100mW
800
805
805
Wavelength [nm]
810
Wavelength [nm]
–5–
810
SLD301V
Temperature dependence of wavelength (Po = 90mW)
Relative radiant intensity
Tc = 12°C
Relative radiant intensity
Tc = –6°C
805
815
825
805
Wavelength [nm]
815
825
Wavelength [nm]
Relative radiant intensity
Tc = 35°C
Relative radiant intensity
Tc = 23°C
805
815
825
805
Wavelength [nm]
Relative radiant intensity
Tc = 45°C
805
815
815
Wavelength [nm]
825
Wavelength [nm]
–6–
825
SLD301V
Unit: mm
M-248 (LO-11)
Reference
Slot
0.4
1.0
3
2
1
Photo
Diode
0
φ9.0 – 0.015
φ7.7 MAX
Reference
Plane
LD Chip
3 – φ0.45
7.0 MAX
φ3.5
1.5 3.4 MAX
0.6 MAX
φ6.9 MAX
Window
Glass
∗2.45
Package Outline
∗Optical
Distance = 2.55 ± 0.05
PCD φ2.54
SONY CODE
M-248
PACKAGE WEIGHT
EIAJ CODE
JEDEC CODE
–7–
1.2g