VISHAY 30CPT100_12

30CPT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 15 A
FEATURES
Base 2
common
cathode
Anode
TO-247AC
Anode
2
1 Common 3
cathode
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175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized VF vs. IR trade off for high efficiency
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Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Full lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
APPLICATIONS
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PRODUCT SUMMARY
IF(AV)
2 x 15 A
VR
100 V
VF at 15 A at 125 °C
0.67 V
High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
VRRM
UNITS
100
VF
15 Apk, TJ = 125 °C (typical, per leg)
TJ
Range
V
0.63
- 55 to 175
°C
30CPT100
UNITS
100
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
TEST CONDITIONS
TJ = 25 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
SYMBOL
per leg
per device
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 158 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1.1 A, L = 60 mH
IAR
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
Repetitive avalanche current
Document Number: 94559
Revision: 07-Oct-08
10 ms sine or 6 ms rect. pulse
For technical questions, contact: [email protected]
VALUES
UNITS
15
30
920
A
240
36
mJ
IAS at
TJ max.
A
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30CPT100
Vishay High Power Products
High Performance
Schottky Generation 5.0,
2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
15 A
VFM (1)
Forward voltage drop per leg
TJ = 25 °C
30 A
15 A
TJ = 125 °C
30 A
IRM (1)
Reverse leakage current per leg
Junction capacitance per leg
CT
Series inductance per leg
LS
Maximum voltage rate of change
dV/dt
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TYP.
MAX.
-
0.81
UNITS
-
0.92
-
0.67
-
0.79
-
120
µA
V
-
5
mA
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
550
-
pF
Measured lead to lead 5 mm from package body
7.5
-
nH
-
10 000
V/µs
Rated VR
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Marking device
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2
UNITS
- 55 to 175
°C
1.4
RthJC
DC operation
°C/W
0.8
RthCS
Mounting surface, smooth and greased
0.25
6
Approximate weight
Mounting torque
VALUES
g
0.21
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Case style TO-247AC
For technical questions, contact: [email protected]
30CPT100
Document Number: 94559
Revision: 07-Oct-08
30CPT100
High Performance
Vishay High Power Products
Schottky Generation 5.0,
2 x 15 A
100
100
Reverse Current - IR (mA)
175°C
150°C
125°C
1
100°C
0.1
75°C
50°C
0.01
25°C
0.001
0.0001
0
20
40
60
80
100
120
Reverse Voltage - VR (V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
Tj = 175°C
10
Tj = 125°C
Tj = 25°C
1
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
20
40
60
80
100
120
Forward Voltage Drop - VFM (V)
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
D = 0.75
1
D = 0.5
D = 0.33
D = 0.25
0.1
D = 0.2
0.01
0.001
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94559
Revision: 07-Oct-08
For technical questions, contact: [email protected]
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3
30CPT100
High Performance
Schottky Generation 5.0,
2 x 15 A
Vishay High Power Products
15
Average Power Loss - (Watts)
Allowable Case Temperature (°C)
180
170
DC
160
Square wave (D=0.50)
80% rated Vr applied
150
180°
120°
90°
60°
30°
12
9
RMS Limit
DC
6
3
see note (1)
0
140
0
5
10
15
20
0
25
Average Forward Current - IF(AV)(A)
10
15
20
25
Average Forward Current - IF(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Non-Repetitive Surge Current - IFSM (A)
5
Fig. 6 - Forward Power Loss Characteristics
1000
100
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
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For technical questions, contact: [email protected]
Document Number: 94559
Revision: 07-Oct-08
30CPT100
High Performance
Vishay High Power Products
Schottky Generation 5.0,
2 x 15 A
Avalanche Current (A)
100
Tj = 25°C
10
Tj = 125°C
1
Tj = 175°C
0.1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Avalanche Energy (mJ)
100
Tj = 25°C
10
Tj = 125°C
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94559
Revision: 07-Oct-08
For technical questions, contact: [email protected]
www.vishay.com
5
30CPT100
High Performance
Schottky Generation 5.0,
2 x 15 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
30
C
P
T
100
1
2
3
4
5
1
-
Current rating (30 A)
2
-
Circuit configuration:
C = Common cathode
3
-
Package:
4
-
T = Trench
5
-
Voltage code (100 V)
P = TO-247
Tube standard pack quantity: 25 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95223
Part marking information
http://www.vishay.com/doc?95226
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For technical questions, contact: [email protected]
Document Number: 94559
Revision: 07-Oct-08
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
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Document Number: 91000