SHANGHAI SUNRISE ELECTRONICS CO., LTD. SB820 THRU SB860 SCHOTTKY BARRIER RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 20 TO 60V CURRENT: 8.0A FEATURES TO-220A • Epitaxial construction for chip • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed: 250oC/10sec/0.375"(9.5mm) lead length at 5 lbs tension MECHANICAL DATA • Terminal: Plated leads solderable per MIL-STD 202E, method 208C • Case: Molded with UL-94 Class V-O recognized flame retardant epoxy • Polarity: As marked • Mounting position: Any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS SYMBOL SB 820 20 14 20 VRRM Maximum Repetitive Peak Reverse Voltage VRMS Maximum RMS Voltage VDC Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IF(AV) (TC=95oC) Peak Forward Surge Current (8.3ms single IFSM half sine-wave superimposed on rated load) VF Maximum Forward Voltage (at 8.0A DC) o Maximum DC Reverse Current Ta=25 C IR (at rated DC blocking voltage) Ta=100oC CJ Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Rθ(ja) TJ Operating Junction Temperature TSTG Storage Temperature Note: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 2.Thermal resistance from junction to case 3. Suffix "R" for reverse polarity SB 830 30 21 30 SB 835 35 25 35 SB 840 40 28 40 SB 850 50 35 50 SB 860 60 42 60 UNITS V V V 8.0 A 150 A 0.65 0.75 V mA mA 5.0 50.0 700 450 2.5 -65 to +125 -65 to +150 pF o -65 to +150 C/W o C o C http://www.sse-diode.com