1 TC850 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER 2 FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ The TC850 is a monolithic CMOS analog-to-digital converter (ADC) with resolution of 15-bits plus sign. It combines a chopper-stabilized buffer and integrator with a unique multiple-slope integration technique that increases conversion speed. The result is 16 times improvement in speed over previous 15-bit, monolithic integrating ADCs (from 2.5 conversions per sec up to 40 per sec). Faster conversion speed is especially welcome in systems with human interface, such as digital scales. The TC850 incorporates an ADC and a µP-compatible digital interface. Only a voltage reference and a few noncritical passive components are required to form a complete 15bit plus sign ADC. CMOS processing provides the TC850 with highimpedance differential inputs. Input bias current is typically only 30pA, permitting direct interface to sensors. Input sensitivity of 100µV per least significant bit (LSB) eliminates the need for precision external amplifiers. The internal amplifiers are auto-zeroed, guaranteeing a zero digital output with 0V analog input. Zero adjustment potentiometers or calibrations are not required. The TC850 outputs data on an 8-bit, 3-state bus. Digital inputs are CMOS compatible; outputs are TTL/CMOS compatible. Chip-enable and byte-select inputs combined with an end-of-conversion output ensures easy interfacing to a wide variety of microprocessors. Conversions can be performed continuously or on command. In continuous mode, data is read as three consecutive bytes and manipulation of address lines is not required. Operating from ±5V supplies, the TC850 dissipates only 20mW. It is packaged in 40-pin plastic or ceramic dual-inline packages (DIPs) and in a 44-pin plastic leaded chip carrier (PLCC), surface-mount package. ■ ■ ■ ■ ■ ■ ■ ■ 15-bit Resolution Plus Sign Bit Up to 40 Conversions per Second 12 Conversions per Second Guaranteed Integrating ADC Technique — Monotonic — High Noise Immunity — Auto-Zeroed Amplifiers Eliminate Offset Trimming Wide Dynamic Range ...................................... 96dB Low Input Bias Current ................................... 30pA Low Input Noise ........................................... 30µVP-P Sensitivity ....................................................... 100µV Flexible Operational Control — Continuous or On-Demand Conversions — Data Valid Output Bus Compatible, 3-State Data Outputs — 8-Bit Data Bus — Simple µP Interface — Two Chip Enables — Read ADC Result Like Memory ± 5V Power Supply Operation ...................... 20mW 40-Pin Dual-in-Line or 44-Pin PLCC Packages FUNCTIONAL BLOCK DIAGRAM 39 REF – 34 CINT RINT REF2 + REF1 + 36 25 –5V +5V 22 40 INT OUT INT IN BUF 24 23 – IN + – IN COMMON 32 31 30 + ANALOG MUX COMPARATOR – BUFFER + + INTEGRATOR 6-BIT UP/DOWN COUNTER 9-BIT UP/DOWN COUNTER DATA LATCH ÷4 BUS INTERFACE DECODE LOGIC CLOCK OSCILLATOR OCTAL 2-INPUT MUX 3-STATE DATA BUS 17 OSC1 18 OSC2 5 7 6 3 CONT/ L/H OVR/ WR DEMAND POL 4 1 2 RD CS CE 4 5 6 – TC850 A/D CONTROL SEQUENCER 3 15 . . . . 8 DB0 ORDERING INFORMATION Part No. Package Temperature Range TC850CLW TC850CPL TC850IJL 44-Pin PLCC 40-Pin Plastic DIP 40-Pin CerDIP 0°C to +70°C 0°C to +70°C – 25°C to +85°C TC850ILW 44-Pin PLCC – 25°C to +85°C 7 DB7 8 TC850-4 11/5/96 TELCOM SEMICONDUCTOR, INC. 3-77 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER TC850 ABSOLUTE MAXIMUM RATINGS* Positive Supply Voltage (VDD to GND) ....................... +6V Negative Supply Voltage (VSS to GND) ..................... – 9V Analog Input voltage (IN+ or IN–) ..................... VDD to VSS Voltage Reference Input (REF1+, REF1–, REF2+) .............................. VDD to VSS Logic Input Voltage ................ VDD + 0.3V to GND – 0.3V Current Into Any Pin .................................................10mA While Operating ................................................100µA Ambient Operating Temperature Range C Device ................................................ 0°C to +70°C I Device ............................................. – 25°C to +85°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Power Dissipation (TA ≤ 70°C) CerDIP ..............................................................2.29W Plastic DIP ........................................................ 1.23W Plastic PLCC .................................................... 1.23W *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: VS = ±5V, fCLK = 61.44 kHz, VFS = 3.2768V, TA = 25°C, Fig. 1 Test Circuit, unless otherwise specified. Symbol Parameter IIN VCMR CMRR Zero-Scale Error End Point Linearity Error Differential Nonlinearity Input Leakage Current Common-Mode Voltage Range Common-Mode Rejection Ratio Full-Scale Gain Temperature Coefficient IPU IPD IOSC CIN COUT tCE tRE tDHC tDHR Zero-Scale Error Temperature Coefficient Full-Scale Magnitude Symmetry Error Input Noise Positive Supply Current Negative Supply Current Output High Voltage Output Low Voltage Output Leakage Current Input High Voltage Input Low Voltage Input Pull-Up Current Input Pull-Down Current Oscillator Output Current Input Capacitance Output Capacitance Chip-Enable Access Time Read-Enable Access Time Data Hold From CS or CE Data Hold From RD tOP OVR/POL Data Access Time eN IS + IS – VOH VOL IOP VIH IL 3-78 Test Conditions Min Typ Max Unit — — — — — VSS + 1.5 — ±0.25 ±1 ±0.1 30 — 1.1 — 80 ±0.5 ±2 ±0.5 75 — 3 VDD – 1.5 — LSB LSB LSB pA — 2 5 ppm/°C — 0.3 2 µV/°C — 0.5 2 LSB IO = 500 µA IO = 1.6 mA Pins 8 – 15, High-Impedance State Note 3 Note 3 Pins 2, 3, 4, 6, 7; VIN = 0V Pins 1, 5; VIN = 5V Pin 18, VOUT = 2.5V Pins 1 – 7, 17 Pins 8 – 15, High-Impedance State CS or CE, RD = LOW (Note 1) CS = HIGH, CE = LOW (Note 1) RD = LOW (Note 1) CS = HIGH, CE = LOW (Note 1) — — — 3.5 — — 3.5 — — — — — — — — — — 30 2 2 4.9 0.15 0.1 2.3 2.1 4 14 140 1 15 230 190 250 210 — 3.5 3.5 — 0.4 1 — 1 — — — — — 450 450 450 450 µVP-P mA mA V V µA V V µA µA µA pF pF nsec nsec nsec nsec CS = HIGH, CE = LOW, RD = LOW (Note 1) — 140 300 nsec VIN = 0V –VFS ≤ VIN ≤ +VFS VIN = 0V, TA = 25°C 0°C ≤ TA ≤ +70°C – 25° ≤ TA ≤ +85°C Over Operating Temperature Range VIN = 0V, VCM = ±1V External Ref Temperature Coefficient = 0 ppm/°C 0°C ≤ TA ≤ +70°C VIN = 0V 0°C ≤ TA ≤ +70°C VIN = ±3.275V Not Exceeded 95% of Time nA V dB TELCOM SEMICONDUCTOR, INC. 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER 1 TC850 ELECTRICAL CHARACTERISTICS (Cont.) Symbol Parameter Test Conditions Min Typ Max Unit tLH Low/High Byte Access Time Clock Setup Time RD Minimum Pulse Width RD Minimum Delay Time WR Minimum Pulse Width Clock Setup Time CS = HIGH, CE = LOW, RD = LOW (Note 1) Positive or Negative Pulse Width CS = HIGH, CE = LOW (Note 2) CS = HIGH, CE = LOW (Note 2) CS = HIGH, CE = LOW, Demand Mode Positive or Negative Pulse Width — 100 450 150 75 100 140 — 230 50 25 — 300 — — — — — nsec nsec nsec nsec nsec nsec tWRE tWRD tWWR NOTES: 1. Demand mode, CONT/DEMAND = LOW. Figure 10 timing diagram. CL = 100pF. 2. Continuous mode, CONT/DEMAND = HIGH. Figure 12 timing diagram. 3. Digital inputs have CMOS logic levels and internal pull-up/pull-down resistors. For TTL compatibility, external pull-up resistors to VCC are recommended. 2 3 PIN CONFIGURATIONS L/H 7 34 DB7 8 33 DB6 9 32 DB5 10 31 DB4 11 TC850CPL TC850IJL 2 1 44 43 42 41 40 DB6 10 + 38 CREF2 + 37 REF2 36 IN+ DB5 11 35 IN– L/H 8 DB7 9 30 COMMON 29 CINTB DB2 13 28 CINTA DB1 14 27 CBUFA DB0 15 26 CBUFB NC 12 25 BUFFER OSC1 17 OSC2 18 24 INTIN 23 INTOUT TEST 19 22 VSS 34 NC TC850CLW TC850ILW DB4 13 BUSY 16 5 – 39 CREF2 OVR/POL 7 DB3 12 GND 20 3 33 COMMON DB3 14 32 CINTB DB2 15 31 CINTA DB1 16 30 CBUFA DB0 17 29 CBUFB 18 19 20 21 22 23 24 21 COMP 25 26 27 28 BUFFER 35 4 INTIN 6 5 INTOUT OVR/POL 6 VSS 36 VDD + REF1 + CREF1 – CREF1 REF – 5 COMP CONT/DEMAND NC 37 NC 4 GND RD CE 38 CS 3 TEST 39 WR 2 OSC2 CE WR VDD + REF1 + CREF1 – CREF1 REF – – CREF2 + CREF2 + REF2 IN+ IN– RD 40 OSC1 1 BUSY CS CONT/DEMAND 4 6 7 NC = NO INTERNAL CONNECTION 8 TELCOM SEMICONDUCTOR, INC. 3-79 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER TC850 PIN DESCRIPTIONS 40-Pin DIP Pin No. Symbol 1 CS 2 3 CE WR 4 RD 5 CONT/DEMAND 6 OVR/POL 7 L/H 8 DB7 Description 9 – 15 16 DB6–DB0 BUSY 17 18 19 20 21 22 23 24 25 26 27 28 29 30 OSC1 OSC2 TEST DGND COMP VSS INTOUT INTIN BUFFER CBUFB CBUFA CINTA CINTB COMMON Chip select, active HIGH. Logically ANDed with CE to enable read and write inputs. (See note 4.) Chip enable, active LOW. (See note 5.) Write input, active LOW. When chip is selected (CS = HIGH and CE = LOW) and in demand mode (CONT/DEMAND = LOW), a logic LOW on WR starts a conversion. (See note 4.) Read input, active LOW. When CS = HIGH and CE = LOW, a logic LOW on RD enables the 3-state data outputs. (See note 5.) Conversion control input. When CONT/DEMAND = LOW, conversions are initiated by the WR input. When CONT/DEMAND = HIGH, conversions are performed continuously. (See note 4.) Overrange/polarity data-select input. When making conversions in the demand mode (CONT/ DEMAND = LOW), OVR/POL controls the data output on DB7 when the high-order byte is active. (See note 5.) Low/high byte-select input. When CONT/DEMAND = LOW, this input controls whether lowbyte or high-byte data is enabled on DB0 through DB7. (See note 5.) Most significant data bit output. When reading the A/D conversion result, the polarity, overrange, and DB7 data are output on this pin. (See text.) Data outputs DB6–DB0. 3-state, bus compatible. A/D conversion status output. BUSY goes to a logic HIGH at the beginning of the deintegrate phase and goes LOW when conversion is complete. The falling edge of BUSY can be used to generate a µP interrupt. Crystal oscillator connection or external oscillator input. Crystal oscillator connection. For factory testing purposes only. Do not make external connection to this pin. Digital ground connection. Connection for comparator auto-zero capacitor. Bypass to VSS with 0.1 µF. Negative power supply connection, typically – 5V. Output of the integrator amplifier. Connect to CINT. Input to the integrator amplifier. Connect to summing node of RINT and CINT. Output of the input buffer. Connect to RINT. Connection for buffer auto-zero capacitor. Bypass to VSS with 0.1 µF. Connection to buffer auto-zero capacitor. Bypass to VSS with 0.1 µF. Connection for integrator auto-zero capacitor. Bypass to VSS with 0.1 µF. Connection for integrator auto-zero capacitor. Bypass to VSS with 0.1 µF. Analog common. 31 30 33 34 35 36 37 38 39 40 IN– COMMON REF2+ CREF2+ CREF2– REF – CREF1– CREF1+ REF1+ VDD Negative differential analog input. Analog common. Positive input for reference voltage VREF2. (VREF2 = VREF1/64) Positive connection for VREF2 reference capacitor. Negative connection for VREF2 reference capacitor. Negative input for reference voltages. Negative connection for VREF1 reference capacitor. Positive connection for VREF1 reference capacitor. Positive input for VREF1. Positive power supply connection, typically +5V. NOTES: 4. This pin incorporates a pull-down resistor to DGND. 5. This pin incorporates a pull-up resistor to VDD. 3-80 TELCOM SEMICONDUCTOR, INC. 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER 1 TC850 THEORY OF OPERATION Multiple-Slope Conversion Principles The TC850 is a multiple-slope, integrating analog-todigital converter (ADC). The multiple-slope conversion process, combined with chopper-stabilized amplifiers, results in a significant increase in ADC speed, while maintaining very high resolution and accuracy. One limitation of the dual-slope measurement technique is conversion speed. In a typical dual-slope method, the auto-zero and integrate times are each one-half of the deintegrate time. For a 15-bit conversion, 214 + 214 + 215 (65,536) clock pulses are required for auto-zero, integrate, and deintegrate phases, respectively. The large number of clock cycles effectively limits the conversion rate to about 2.5 conversions per second, when a typical analog CMOS fabrication process is used. The TC850 uses a multiple-slope conversion technique to increase conversion speed (Figure 2B). This technique makes use of a two-slope deintegration phase and permits 15-bit resolution up to 40 conversions per second. During the TC850's deintegration phase, the integration capacitor is rapidly discharged to yield a resolution of 9 bits. At this point, some charge will remain on the capacitor. This remaining charge is then slowly deintegrated, producing an Dual-Slope Conversion Principles The conventional dual-slope converter measurement cycle (shown in Figure 2A) has two distinct phases: (1) Input signal integration (2) Reference voltage integration (deintegration) The input signal being converted is integrated for a fixed time period, measured by counting clock pulses. An opposite polarity constant reference voltage is then integrated until the integrator output voltage returns to zero. The reference integration time is directly proportional to the input signal. In a simple dual-slope converter, complete conversion requires the integrator output to "ramp-up" and "rampdown." Most dual-slope converters add a third phase, autozero. During auto-zero, offset voltages of the input buffer, integrator, and comparator are nulled, thereby eliminating the need for zero-offset adjustments. Dual-slope converter accuracy is unrelated to the integrating resistor and capacitor values, as long as they are stable during a measurement cycle. By converting the unknown analog input voltage into an easily-measured function of time, the dual-slope converter reduces the need for expensive, precision passive components. Noise immunity is an inherent benefit of the integrating conversion method. Noise spikes are integrated, or averaged, to zero during the integration period. Integrating ADCs are immune to the large conversion errors that plague successive approximation converters in high-noise environments. A simple mathematical equation relates the input signal, reference voltage, and integration time: ∫ tSI 1 V t VIN(t) dt = R RI , RC 0 RC where: VR = Reference voltage tSI = Signal integration time (fixed) tRI = Reference voltage integration time (variable). 40 VDD 16 BUSY 8 DB7 9 DB6 10 DB5 11 DB4 12 DB3 13 DB2 20 VSS + 32 IN – IN 31 30 COMMON + REF1 39 + 33 REF2 36 REF– + CREF1 38 TC850 – CREF1 37 + CREF2 34 – 35 CREF2 ** 21 100 MΩ 0.01 µF INPUT +1.6384V 1 µF* 1 µF* 25 INTIN 24 INTOUT 23 RINT 0.1µF BUFFER 6 CINT OSC1 TEST 19 NC OSC2 COMP 7 CINTA CINTBCBUFA CBUFB 28 0.1 µF 0.1 µF 29 0.1 µF 27 0.1 µF 26 0.1 µF NOTES: Unless otherwise specified, all 0.1µF capacitors are film dielectric. Ceramic capacitors are not recommended. NC = No internal capacitors *Polypropylene capacitors. ** 100pF Mica capacitors. 8 Figure 1. Standard Circuit Configuration TELCOM SEMICONDUCTOR, INC. 5 +0.0265V 120 MΩ ** 18 4 22 DGND 14 DB1 15 DB0 1 CS 2 CE 3 WR 4 RD 5 CONT/DEMAND 6 OVR/POL 7 L/H 61.44 kHz 3 –5V +5V 17 2 3-81 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER TC850 additional 6 bits of resolution. The result is 15 bits of resolution achieved with only 29 + 26 (512 + 64, or 576) clock pulses for deintegration. A complete conversion cycle occupies only 1280 clock pulses. In order to generate "fast-slow" integration phases, two voltage references are required. The primary reference (VREF1) is set to one-half of the full-scale voltage (typically VREF1 = 1.6384V, and VFS = 3.2768V). The secondary voltage reference (VREF2) is set to VREF1/64 (typically 25.6 mV). To maintain 15-bit linearity, a tolerance of 0.5% for VREF2 is recommended. SIGNAL INTEGRATE REFERENCE DEINTEGRATE END OF CONVERSION AUTO INTEGRATOR ZERO OUTPUT 0V TIME ANALOG SECTION DESCRIPTION Figure 2A. Dual-Slope ADC Cycle The TC850 analog section consists of an input buffer amplifier, integrator amplifier, comparator, and analog switches. A simplified block diagram is shown in Figure 3. "FAST" REFERENCE DEINTEGRATE (9-BIT RESOLUTION) Conversion Timing "SLOW" REFERENCE DEINTEGRATE (6-BIT RESOLUTION) SIGNAL INTERGRATE Each conversion consists of three phases: (1) Zero Integrator, (2) Signal Integrate, and (3) Reference Integrate (or Deintegrate). Each conversion cycle requires 1280 internal clock cycles (Figure 4). END OF CONVERSION INTEGRATOR OUTPUT AUTO ZERO 0V TIME Figure 2B. "Fast-Slow" Reference Deintegrate Cycle CREF1 REF1+ REF1– C+ REF1 DE DE RINT C REF2 – C REF2 – C REF1 – C REF2 REF2+ DE DE BUFF – BUFFER* INT DE1 (–) DE1 (+) DE1 (+) DE1 (–) DE1 (–) DE2 (+) DE1 (+) DE2 (–) INTOUT INTIN INTEGRATOR* + + IN CINT – – + + TO DIGITAL SECTION COMPARATOR* Z1 *AUTO-ZEROED AMPLIFIERS COMMON – IN INT INT TC850 Figure 3. Analog Section Simplified Schematic 3-82 TELCOM SEMICONDUCTOR, INC. 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER 1 TC850 1280 CLOCK CYCLES INTERNAL CLOCK . . . . . . . 246 CONVERSION PHASE ZERO INTEGRATOR . . 2 . . . . . . . . . . . . 256 778 SIGNAL INTEGRATE REFERENCE INTEGRATE 3 Figure 4. Conversion Timing Zero-Integrator Phase During the zero-integrator phase, the differential input signal is disconnected from the circuit by opening internal analog gates. The internal nodes are shorted to analog common (ground) to establish a zero-input condition. At the same time, a feedback loop is closed around the input buffer, integrator, and comparator. The feedback loop ensures the integrator output is near 0V before the signal-integrate phase begins. During this phase, a chopper-stabilization technique is used to cancel offset errors in the input buffer, integrator, and comparator. Error voltages are stored on the CBUFF, CINT, and COMP capacitors. The zero-integrate phase requires 246 clock cycles. Signal-Integrate Phase The zero-integrator loop is opened and the internal differential inputs are connected to IN+ and IN–. The differential input signal is integrated for a fixed time period. The TC850 signal-integrate period is 256 clock periods, or counts. The crystal oscillator frequency is 44 before clocking the internal counters. The integration time period is: tSI = 4 × 256 fOSC Reference-Integrate Phase During reference-integrate phase, the charge stored on the integrator capacitor is discharged. The time required to discharge the capacitor is proportional to the analog input voltage. The reference integrate phase is divided into three subphases: (1) fast, (2) slow, and (3) overrange deintegrate. – During fast deintegrate, VIN is internally connected to + analog common and VIN is connected across the previouslycharged reference capacitor (CREF1). The integrator capacitor is rapidly discharged for a maximum of 512 internal clock pulses, yielding 9 bits of resolution. TELCOM SEMICONDUCTOR, INC. During the slow deintegrate phase, the internal VIN+ node is now connected to the CREF2 capacitor, and the residual charge on the integrator capacitor is further discharged a maximum of 64 clock pulses. At this point, the analog input voltage has been converted with 15 bits of resolution. If the analog input is greater than full scale, the TC850 performs up to three overrange deintegrate subphases. Each subphase occupies a maximum of 64 clock pulses. The overrange feature permits analog inputs up to 192 LSBs greater than full scale to be correctly converted. This feature permits the user to digitally null up to 192 counts of input offset, while retaining full 15-bit resolution. In addition to 512 counts of fast, 64 counts of slow, and 192 counts of overrange deintegrate, the reference-integrate phase uses 10 clock pulses to permit internal nodes to settle. Therefore, the reference integrate cycle occupies 778 clock pulses. Pin Description (Analog) Differential Inputs (IN+ and IN–) The analog signal to be measured is applied at the IN+ and IN– inputs. The differential input voltage must be within the common-mode range of the converter. The input common-mode range extends from VDD –1.5V to VSS +1.5V. Within this common-mode voltage range, an 86 dB CMRR is typical. The integrator output also follows the common-mode voltage. The integrator output must not be allowed to saturate. A worst-case condition exists, for example, when a large, positive common-mode voltage with a near full-scale negative differential input voltage is applied. The negative input signal drives the integrator positive when most of its available swing has been used up by the positive commonmode voltage. For applications where maximum commonmode range is critical, integrator swing can be reduced. The integrator output can swing within 0.4V of either supply without loss of linearity. 3-83 4 5 6 7 8 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER TC850 Differential Reference (VREF) The TC850 requires two reference voltage sources in order to generate the "fast-slow" deintegrate phases. The + main voltage reference (VREF1) is applied between the REF1 and REF – pins. The secondary reference (VREF2) is applied between the REF+2 and REF – pins. The reference voltage inputs are fully differential, and the reference voltage can be generated anywhere within the power supply voltage of the converter. However, to minimize roll-over error, especially at high conversion rates, keep the reference common-mode voltage (i.e., REF – ) near or at the analog common potential. All voltage reference inputs are high impedance. Average reference input current is typically only 30pA. Analog Common (COMMON) Analog common is used as the IN– return during the zero-integrator and deintegrate phases of each conversion. If IN– is at a different potential than analog common, a common-mode voltage exists in the system. This signal is rejected by the 86 dB CMRR of the converter. However, in most applications, IN– will be set at a fixed, known voltage (power supply common, for instance). In this case, analog common should be tied to the same point so that the common-mode voltage is eliminated. DBO–DB7 8 3-STATE BUFFER OUTPUT ENABLE 8 OCTAL 2-INPUT MUX DIGITAL SECTION DESCRIPTION The TC850 digital section consists of two sets of conversion counters, control and sequencing logic, clock oscillator and divider, data latches, and an 8-bit, 3-state interface bus. A simplified schematic of the bus interface logic is shown in Figure 5. Clock Oscillator The TC850 includes a crystal oscillator on-chip. All that is required is to connect a crystal across OSC1 and OSC2 pins, and to add two inexpensive capacitors (Figure 1). The oscillator output is ÷ 4 prior to clocking the A/D internal counters. For example, a 100kHz crystal produces a system clock frequency of 25kHz. Since each conversion requires 1280 clock periods, in this case the conversion rate will be 25,000/1280, or 19.5 conversions per second. In most applications, however, an external clock is divided down from the microprocessor clock. In this case, the OSC1 pin is used as the external oscillator input and OSC2 is left unconnected. The external clock driver should swing from digital ground to VDD. The ÷4 function is active for both external clock and crystal oscillator operations. 8 LOW-BYTE UP/DOWN COUNTER 7 SELECT HIGH-BYTE UP/DOWN COUNTER L/H RD CE TO A/D CONTROL LOGIC CS POL/OVR TC850 SELECT POLARITY 2-INPUT MUX WR CONT/ DEMAND START CONVERSION OVERANGE END OF CONVERSION Figure 5. Bus Interface Simplified Schematic 3-84 TELCOM SEMICONDUCTOR, INC. 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER 1 TC850 Digital Operating Modes Two modes of operation are available with the TC850, continuous conversions and on-demand. The operating mode is controlled by the CONT/DEMAND input. The bus interface method is different for continuous and demand modes of operation. Demand Mode Operation When CONT/DEMAND is low, the TC850 performs one conversion each time the chip is selected and the WR input is pulsed low. Data is valid on the falling edge of the BUSY output and can be accessed using the interface truth table (Table 1). Continuous Mode Operation When CONT/DEMAND is high, the TC850 continuously performs conversions. Data will be valid on the falling edge of the BUSY output, and remains valid for 443-1/2 clock cycles. The low/high (L/H) byte-select and overrange/polarity (OVR/POL) inputs are disabled during continuous mode operation. Data must be read in three consecutive bytes, as shown in Table I. NOTE: In continuous mode, the conversion result must be read within 4431/2 clock cycles of the BUSY output falling edge. After this time (i.e., 1/2 clock cycle before BUSY goes high) the internal counters are reset and the data is lost. 2 3 Table 1. Bus Interface Truth Table CE•CS RD CONT/DEMAND L/H OVR/POL DB7 DB6–DB0 Pins 1 and 2 0 0 Pin 4 0 0 Pin 5 0 0 Pin 7 0 0 Pin 6 0 1 Pin 9-Pin 15 (Note 1) Data Bits 14 – 8 Data Bits 14 – 8 0 0 0 1 0 0 1 X 0 1 X X 1 X X X X X X X Pin 8 "1" = Input Positive "1" = Input Overrange (Note 2) Data Bit 7 Note 3 High-Impedance State High-Impedance State Data Bits 6 – 0 NOTES: 1. Pin numbers refer to 40-pin DIP. 2. Extended overrange operation: Although rated at 15 bits (±32,767 counts) of resolution, the TC850 provides an additional 191 counts above full scale. For example, with a full-scale input of 3.2768V, the maximum analog input voltage which will be properly converted is 3.2958V. The extended resolution is signified by the overrange bit being high and the low-order byte contents being between 0 and 190. For example, with a full-scale voltage of 3.2768V: VIN 3.2767V 3.2768V 3.2769V 3.2867V Overrange Bit Low High High High Low Byte 25510 00010 00110 09910 4 Data Bits 14–8 12710 010 010 010 3. Continuous mode data transfer: a. In continuous mode, data MUST be read in three sequential bytes after the BUSY output goes low: (1) The first byte read will be the high-order byte, with DB7 = polarity. (2) The second byte read will contain the low-order byte. (3) The third byte read will again be the high-order byte, but with DB7 = overrange. b. All three data bytes must be read within 443-1/2 clock cycles after the falling edge of BUSY. c. The RD input must go high after each byte is read, so that the internal byte counter will be incremented. However, the CS and CE inputs can remain enabled through the entire data transfer sequence. 5 6 7 8 TELCOM SEMICONDUCTOR, INC. 3-85 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER TC850 Pin Description (Digital) Chip Select and Chip Enable (CS and CE) The CS and CE inputs permit easy interfacing to a variety of digital bus systems. CE is active LOW while CS is active HIGH. These inputs are logically ANDed internally and are used to enable the RD and WR inputs. Write Enable Input (WR) The write input is used to initiate a conversion when the TC850 is in demand mode. CS and CE must be active for the WR input to be recognized. The status of the data bus is meaningless during the WR pulse, because no data is actually written into the TC850. Read Enable Input (RD) The read input, combined with CS and CE, enables the 3-state data bus outputs. Also, in continuous mode, the rising edge of the RD input activates an internal byte counter to sequentially read the three data bytes. Low/High Byte Select (L/H) The L/H input determines whether the low (least significant) byte or high (most significant) byte of data is placed on the 3-state data bus. This input is meaningful only when the TC850 is in the demand mode. In the continuous mode, data must be read in three predetermined bytes, so the L/H input is ignored. Overrange/Polarity Bit Select (OVR/POL) The TC850 provides 15 bits of resolution, plus polarity and overrange bits. Thus, 17 bits of information must be transferred on an 8-bit data bus. To accomplish this, the overrange and polarity bits are multiplexed onto data bit DB7 of the most significant byte. When OVR/POL is HIGH, DB7 of the high byte contains the overrange status (HIGH = analog input overrange, LOW = input within full scale). When OVR/POL is LOW, DB7 is HIGH for positive analog input polarity and LOW for negative polarity. The OVR/POL input is meaningful only when CS, CE, and RD are active, and L/ H is LOW (i.e., the most significant byte is selected). OVR/ POL is ignored when the TC850 is in continuous mode. Continuous/Demand Mode Input (CONT/DEMAND) This input controls the TC850 operating mode. When CONT/DEMAND is HIGH, the TC850 performs conversions continuously. In continuous mode, data must be read in the prescribed sequence shown in Table I. Also, all three data bytes must be read within 443-1/2 internal clock cycles after the BUSY output goes low. After 443-1/2 clock cycles data will be lost. When CONT/DEMAND is LOW, the TC850 begins a conversion each time CS and CE are active and WR is 3-86 pulsed LOW. The conversion is complete and data can be read after the falling edge of the BUSY output. In demand mode, data can be read in any sequence, and remains valid until WR is again pulsed LOW. Busy Output (BUSY) The BUSY output is used to convey an end-of-conversion to external logic. BUSY goes HIGH at the beginning of the deintegrate phase and goes LOW at the end of the conversion cycle. Data is valid on the falling edge of BUSY. The output-high period is fixed at 836 clock periods, regardless of the analog input value. BUSY is active during continuous and demand mode operation. This output can also be used to generate an end-ofconversion interrupt in µP-based systems. Noninterruptdriven systems can poll BUSY to determine when data is valid. ANALOG SECTION APPLICATIONS Component Selection Reference Voltage The typical value for reference voltage VREF1 is 1.6384V. This value yields a full-scale voltage of 3.2768V and resolution of 100µV per step. The VREF2 value is derived by dividing VREF1 by 64. Thus, typical VREF2 value is 1.6384V/64, or 25.6mV. The VREF2 value should be adjusted within ±1% to maintain 15-bit accuracy for the total conversion process; i.e., VREF2 = VREF1 ±1%. 64 The reference voltage is not limited to exactly 1.6384V, however, because the TC850 performs a ratiometric conversion. Therefore, the conversion result will be: Digital counts = VIN • 16384. VREF1 The full-scale voltage can range from 3.2V to 3.5V. Fullscale voltages of less than 3.2V will result in increased noise in the least significant bits, while a full-scale above 3.5V will exceed the input common-mode range. Integration Resistor The TC850 buffer supplies 25µA of integrator charging current with minimal linearity error. RINT is easily calculated: RINT = VFULL SCALE . 25 µA For a full-scale voltage of 3.2768V, values of RINT between 120kΩ and 150kΩ are acceptable. TELCOM SEMICONDUCTOR, INC. 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER 1 TC850 Integration Capacitor The integration capacitor should be selected to produce an integrator swing of ≈4V at full scale. The capacitor value is easily calculated: C = VFS • 4 • 256 , RINT 4V • fCLOCK where fCLOCK is the crystal or external oscillator frequency and VFS is the maximum input voltage. The integration capacitor should be selected for low dielectric absorption to prevent roll-over errors. A polypropylene, polyester or polycarbonate dielectric capacitor is recommended. Reference Capacitors The reference capacitors require a low leakage dielectric, such as polypropylene, polyester or polycarbonate. A value of 1µF is recommended for operation over the temperature range. If high-temperature operation is not required, the CREF values can be reduced. fCLOCK = fNOISE × 4 × 256, where fNOISE is the noise frequency to be rejected, 4 represents the clock divider, and 256 is the number of integrate cycles. For example, 60Hz noise will be rejected with a clock frequency of 61.44kHz, giving a conversion rate of 12 conversions/sec. Integer submultiples of 61.44kHz (such as 30.72kHz, etc.) will also reject 60Hz noise. For 50Hz noise rejection, a 51.2kHz frequency is recommended. If noise rejection is not important, other clock frequencies can be used. The TC850 will typically operate at conversion rates ranging from 3 to 40 conversions/sec, corresponding to oscillator frequencies from 15.36kHz to 204.8kHz. DIGITAL SECTION APPLICATION Oscillator The TC850 may operate with a crystal oscillator. The crystal selected should be designed for a Pierce oscillator, such as an AT-cut quartz crystal. The crystal oscillator schematic is shown in Figure 6. Since low frequency crystals are very large and ceramic resonators are too lossy, the TC850 clock should be derived from an external source, such as a microprocessor clock. The clock should be input on the OSC1 pin and no connection should be made to the OSC2 pin. The external clock should swing between DGND and VDD. Since oscillator frequency is ÷ 4 internally and each conversion requires 1280 internal clock cycles, the conversion time will be: Conversion time = fCLOCK × 4 × 1280. An important advantage of the integrating ADC is the ability to reject periodic noise. This feature is most often used to reject line frequency (50Hz or 60Hz) noise. Noise rejection is accomplished by selecting the integration period equal to one or more line frequency cycles. The desired clock frequency is selected as follows: TELCOM SEMICONDUCTOR, INC. 3 10 MΩ ÷4 TC850 17 Auto-Zero Capacitors Five capacitors are required to auto-zero the input buffer, integrator amplifier, and comparator. Recommended capacitors are 0.1µF film dielectric (such as polyester or polypropylene). Ceramic capacitors are not recommended. 2 61.44 kHz 100 pF SYSTEM CLOCK 4 18 100 pF 5 Figure 6. Crystal Oscillator Schematic Data Bus Interfacing The TC850 provides an easy and flexible digital interface. A 3-state data bus and six control inputs permit the TC850 to be treated as a memory device, in most applications. The conversion result can be accessed over an 8-bit bus or via a µP I/O port. A typical µP bus interface for the TC850 is shown in Figure 7. In this example, the TC850 operates in the demand mode, and conversion begins when a write operation is performed to any decoded address space. The BUSY output interrupts the µP at the end-of-conversion. The A/D conversion result is read as three memory bytes. The two LSBs of the address bus select high/low byte and overrange/polarity bit data, while high-order address lines enable the CE input. Figure 8 shows a typical interface to a µP I/O port or single-chip µC. The TC850 operates in the continuous mode, and can either interrupt the µC/µP or be polled with an input pin. 6 7 8 3-87 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER TC850 DB0 DB1 DB2 DB3 DB4 DB5 DB6 DB7 CS TC850 ADDRESS X00 X01 X10 +5V µP ... L/H OVR/POL RD WR BUSY CS CONT/DEMAND ADDRESS DECODE DB0 DB1 DB2 DB3 DB4 DB5 DB6 DB7 A2 A15 A0 A1 RD WR INTERRUPT DATA BUS HIGH BYTE AND POLARITY LOW BYTE HIGH BYTE AND OVERRANGE Figure 7. Interface to Typical µP Data Bus TC850 PA0 PA1 PA2 PA3 PA4 PA5 PA6 PA7 DB0 DB1 DB2 DB3 DB4 DB5 DB6 DB7 INTERRUPT BUSY PB0 RD CONT/DEMAND µC OR µP I/O PORT +5V CS CS WR NC Figure 8. Interface to Typical µP I/O Port or Single-Chip µC 3-88 Since the PA0–PA7 inputs are dedicated to reading A/D data, the A/D CS/CE inputs can be enabled continuously. In continuous mode, data must be read in 3 bytes, as shown in Table I. The required RD pulses are provided by a µC/µP output pin. The circuit of Figure 8 can also operate in the demand mode, with the start-up conversion strobe generated by a µC/µP output pin. In this case, the L/H and CONT/DEMAND inputs can be controlled by I/O pins and the RD input connected to digital ground. Demand Mode Interface Timing When CONT/DEMAND input is LOW, the TC850 performs a conversion each time CE and CS are active and WR is strobed LOW. The demand mode conversion timing is shown in Figure 9. BUSY goes LOW and data is valid 1155 clock pulses after WR goes LOW. After BUSY goes low, 125 additional clock cycles are required before the next conversion cycle will begin. Once conversion is started, WR is ignored for 1100 internal clock cycles. After 1100 clock cycles, another WR pulse is recognized and initiates a new conversion when the present conversion is complete. A negative edge on WR is required to begin conversion. If WR is held LOW, conversions will not occur continuously. The A/D conversion data is valid on the falling edge of BUSY, and remains valid until one-half internal clock cycle before BUSY goes HIGH on the succeeding conversion. BUSY can be monitored with an I/O pin to determine end of conversion, or to generate a µP interrupt. In demand mode, the three data bytes can be read in any desired order. The TC850 is simply regarded as three bytes of memory and accessed accordingly. The bus output timing is shown in Figure 10. Continuous Mode Interface Timing When the CONT/DEMAND input is HIGH, the TC850 performs conversions continuously. Data will be valid on the falling edge of BUSY, and all three bytes must be read within 443-1/2 internal clock cycles of BUSY going LOW. The timing diagram is shown in Figure 11. In continuous mode, OVR/POL and L/H byte-select inputs are ignored. The TC850 automatically cycles through three data bytes, as shown in Table I. Bus output timing in the continuous mode is shown in Figure 12. TELCOM SEMICONDUCTOR, INC. 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER 1 TC850 CS . . . . . . . . . . . . INTERNAL CLOCK 2 . CE 1100 CLOCK CYCLES NEXT CONVERT COMMAND WILL BE RECOGNIZED WR PULSES ARE IGNORED WR NEXT CONVERSION CAN BEGIN 3 836 CLOCK CYCLES 319 CLOCK CYCLES 125 CLOCK CYCLES BUSY DB0-DB7 PREVIOUS CONVERSION DATA VALID NEW CONVERSION DATA VALID DATA MEANINGLESS 4 Figure 9. Conversion Timing, Demand Mode tDHC tCE CS . CE tDHR tRE 5 * RD DB0-DB6 HI-Z DB7 HI-Z DATA BITS 0 T0 6 DATA BITS 8 TO 14 "1"= INPUT OVERRANGE "1"= POSITIVE POLARITY HIGH IMPEDANCE 6 DATA BIT 7 HIGH IMPEDANCE tOP OVR/POL DONT' CARE 7 tLH DONT' CARE L/H NOTE: CONT/DEMAND = LOW *RD (as well as CS and CE) can go HIGH after each byte is read (i.e., in a µP bus interface) or remain LOW during the entire DATA-READ sequence (i.e., µP I/O port interface). 8 Figure 10. Bus Output Timing, Demand Mode TELCOM SEMICONDUCTOR, INC. 3-89 15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER TC850 . . . . . . . . . . . . INTERNAL CLOCK . . . . . 1280 INTERNAL CLOCK CYCLES BUSY 443-1/2 CLOCK CYCLES 836 CLOCK CYCLES 1/2 CLOCK CYCLE DB0-DB7 DATA VALID DATA MEANINGLESS DATA MEANINGLESS Figure 11. Conversion Timing, Continuous Mode CONT/DEMAND BUSY tWRE RD DB0-DB7 tRE HI-Z tWRD DATA BITS 8-14 POLARITY DATA BITS 0-7 DATA BITS 8-14 OVERRANGE HIGH IMPEDANCE STATE NOTES: CS = HIGH; CE = LOW Figure 12. Bus Output Timing, Continuous Mode 3-90 TELCOM SEMICONDUCTOR, INC.