Advance Product Information January 17, 2005 33 - 47 GHz Wide Band Driver Amplifier TGA4522-EPU Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27 dBm Nominal Psat @ 38GHz 26 dBm P1dB @ 38 GHz 35 dBm OTOI @ Pin = 18 dBm/Tone 14 dB Nominal Gain @ 38GHz 14 dB Nominal Return Loss @ 38GHz Bias: 6 V @ 400 mA Idq 0.25 um 3MI pHEMT Technology Chip Dimensions 2.00 x 1.45 x 0.10 mm (0.079 x 0.057 x 0.004 in) Primary Applications • • • • Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM Product Description Measured Fixtured Data The TriQuint TGA4522-EPU is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint’s proven standard 0.25um power pHEMT production process. The TGA4522-EPU nominally provides 27 dBm saturated output power, and 26 dBm output power at 1dB Gain compression @ 38 GHz. It also has typical gain of 14 dB, and return loss of 12 dB. S-parameter (dB) Bias Conditions: Vd = 6 V, Idq = 400 mA 20 15 10 5 0 -5 -10 -15 -20 -25 -30 Gain IRL ORL 32 The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications. 34 36 38 40 42 44 46 48 46 48 Frequency (GHz) The TGA4522-EPU is 100% DC and RF tested onwafer to ensure performance compliance. Output Power (dBm) 30 28 Psat 26 24 P1dB 22 20 18 32 34 36 38 40 42 44 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 8V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 700 mA 2/ 3/ Ig Gate Current 16 mA 3/ PIN Input Continuous Wave Power 23 dBm PD Power Dissipation TCH TM TSTG Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature -2 TO 0 V See note 4/ 0 150 C 2/ 5/ 6/ 0 320 C -65 to 150 0C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 0C – TBASE 0C) / 35.5 (0C/W) Where TBASE is the base plate temperature. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL UNITS Frequency Range 33 - 47 GHz Drain Voltage, Vd 6.0 V Drain Current, Id 400 mA Gate Voltage, Vg -0.5 V Small Signal Gain, S21 13 dB Input Return Loss, S11 14 dB Output Return Loss, S22 18 dB Output Power @ 1dB Gain Compression, P1dB 26 dBm Saturated Power, Psat 27 dBm TABLE III THERMAL INFORMATION PARAMETER RθJC Thermal Resistance (channel to Case) TEST CONDITIONS Vd = 5 V Id = 400 mA Pdiss = 2.0 W TCH O ( C) RTJC (qC/W) TM (HRS) 140 35.5 2.4E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 50 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU Preliminary Measured Data Bias Conditions: Vd = 5-6 V, Idq = 400 mA 20 18 16 5V Gain (dB) 14 12 10 6V 8 6 4 2 0 30 32 34 36 38 40 42 44 46 48 50 46 48 50 Frequency (GHz) Bias Conditions: Vd = 6 V, Idq = 400 mA 20 15 10 Return Loss (dB) 5 0 -5 -10 IRL -15 ORL -20 -25 -30 30 32 34 36 38 40 42 44 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU Preliminary Measured Data Bias Conditions: Vd = 4 - 6 V, Idq = 400 mA 28 Vd=6V 27 Vd=5V 26 Vd=4V P1dB (dBm) 25 24 23 22 21 20 19 18 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Frequency (GHz) 28 27 Vd=6V Vd=5V 26 Vd=4V Psat (dBm) 25 24 23 22 21 20 19 18 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU Preliminary Measured Data 28 750 Bias Conditions: Vd = 6 V, Idq = 400 mA, Freq = 38 GHz 700 24 650 22 600 20 550 18 500 16 450 14 400 12 350 10 8 Power 300 Gain 250 Id 6 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Id (mA) Pout (dBm) & Gain (dB) 26 200 16 18 Pin (dBm) 28 750 Bias Conditions: Vd = 5 V, Idq = 400 mA, Freq = 38 GHz 700 24 650 22 600 20 550 18 500 16 450 14 400 12 350 10 300 Power Gain 8 Id (mA) Pout (dBm) & Gain (dB) 26 250 Id 6 200 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU Preliminary Measured Data Bias Conditions: Vd = 6 V, Idq = 400 mA, f=10MHz @ 18dBm/Tone 39 38 37 OTOI (dBm) 36 35 34 33 32 31 30 29 35 35.5 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 Frequency (GHz) 44 42 40 38 IMD3 (dBc) 36 34 32 30 28 26 37GHz 24 38GHz 22 39GHz 40GHz 20 18 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power / Tone (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU Mechanical Drawing 0.108 (0.004) 0.261 (0.010) 0.391 (0.015) 0.530 (0.021) 1.352 (0.053) 1.500 (0.059) 1.670 (0.066) 1.450 (0.057) 2 1.351 (0.053) 3 5 4 6 1.351 (0.053) 7 1.071 (0.042) 8 0.398 (0.016) 1 0.129 (0.005) 13 0.099 (0.004) 0 0 0.391 (0.015) 12 11 0.530 (0.021) 1.352 (0.053) 10 1.500 (0.059) 9 1.670 (0.066) RC B RC B 1.893 (0.075) 2.000 (0.079) Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1 Bond pad #2 Bond pad #3, 13 Bond pad #4, 5, 7, 9, 11, 12 Bond pad #6, 10 Bond pad #8 (RF In) (N/C) (Vg) (Vd) (N/C) (RF Out) 0.100 x 0.150 0.100 x 0.108 0.108 x 0.108 0.108 x 0.108 0.091 x 0.084 0.100 x 0.150 (0.004 x 0.006) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.003) (0.004 x 0.006) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU Recommended Chip Assembly Diagram Vd 0.01 F Vg 15 0.01 F 15 100pF 100pF 100pF 1.0 F 1.0 F TFN (10mil Alumina) Wedge bonds or ribbons TFN (10mil Alumina) Vg 0.01 F 100pF 100pF 100pF 15 Vd 0.01 F 15 1.0 F 1.0 F To reduce these components (0.01 F, 15 , 1.0 F) connect: Vg @ bottom to Vg @ top Vd @ bottom to Vd @ top Bias Conditions: Vd = 5 - 6 V Vg = ~ -0.5 V to get 400mA Id GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 17, 2005 TGA4522-EPU Assembly Process Notes Reflow process assembly notes: • • • • • 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com