Advance Product Information May 3, 2000 17-21 GHz Intermediate Power Amplifier TGA9088A-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 17-21GHz Frequency Range 22 dBm @ P2dB Nominal Pout 18.5 dBm Nominal Gain IRL>18 dB, ORL>10 dB 7V, 66mA Self Bias Primary Applications Chip Dimensions 2.41mm x 1.52 mm x 0.1mm • Satellite Systems • Point-to-Point Radio EG1901A (TGA9088A), LOT # 9733701-1,2,3: On-Wafer-Testing (1640 Devices) Self Bias @ V+ = 5V, Vd = 7V, Id >= 56 mA EG1901A (TGA9088A), LOT # 9733701-1,2,3: On-Wafer-Testing (1640 Devices) Self Bias @ V+ = 5V, Vd = 7V, Id >= 56 mA 24 24 22 22 Output Power @ 2dB Compression (dBm) 20 20 18 18 16 mean 12 X-s 10 X+s Gain (dB) 16 14 14 mean 12 X-s 8 8 6 6 4 4 2 0 17.0 X+s 10 2 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 Frequency (GHz) Measured Pout at 2dB Gain Compression 0 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 Frequency (GHz) Measured Small Signal Gain Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information May 3, 2000 TGA9088A Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 3, 2000 TGA9088A Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 3, 2000 TGA9088A Assembly Process Notes Reflow process assembly notes: •= •= •= •= •= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: •= •= •= •= •= •= •= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: •= •= •= •= •= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200ΓC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com