Advance Product Information July 22, 2003 Ku Band, 2 Watt Power Amplifier TGA2510-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance 34 dBm Midband Psat 26 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss 12.5 - 17 GHz Frequency Range Directional Power Detector with Reference 0.25µm pHEMT 3MI Technology Bias Conditions: 7.5V, 650mA Chip Dimensions: 2.02 x 1.38 x 0.10 mm (0.080 x 0.054 x 0.004 inches) 30 10 25 5 20 0 S21 S11 S22 15 Primary Applications -5 10 -10 5 -15 0 S11,S22 (dB) S21 (dB) Bias Conditions: Vd=7.5V Id=650mA • • VSAT Point to Point -20 10 11 12 13 14 15 16 17 18 19 20 36 33 60 Psat 55 P2dB PAE 50 45 32 40 31 35 30 30 29 25 28 20 27 15 P2dB, Psat (dBm) 35 34 26 PAE @ P2dB (%) Frequency (GHz) 10 10 11 12 13 14 15 16 17 18 19 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 TGA2510-EPU TABLE I MAXIMUM RATINGS Symbol Parameter Value Notes 8V 1/ 2/ VD Drain Voltage VG Gate Voltage Range -5V to 0V 1/ ID Drain Supply Current (Quiescent) 1300 mA 1/ 2/ | IG | Gate Supply Current 18 mA 1/ PIN Input Continuous Wave Power 24 dBm 1/ 2/ PD Power Dissipation 6.43 W 1/ 2/ 3/ TCH TM TSTG 0 Operating Channel Temperature 150 C 4/ 0 Mounting Temperature (30 Seconds) 320 C 0 Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70°C 3/ When operated at this bias condition with a baseplate temperature of 70°C, the MTTF is reduced to 1.0E+6 hours 4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE TEST (TA = 25 °C, Nominal) NOTES SYMBOL UNITS LIMITS 1/ IDSS MIN 80 MAX 381 mA 1/ GM 175 425 mS 2/ |VP| 0.5 1.5 V 2/ |VBVGS| 8 30 V 2/ |VBVGD| 14 30 V 1/ Measurements are performed on a 800mm FET. 2/ VP, VBVGD, and VBVGS are negative. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 TGA2510-EPU TABLE III RF CHARACTERIZATION TABLE (TA = 25°C, Nominal) (Vd = 7.5V, Id = 650mA ±5%) Symbol Parameter Test Conditions Typ Units Gain Small Signal Gain F = 12.5 – 17 GHz 26 dB IRL Input Return Loss F = 12.5 – 17 GHz 7 dB ORL Output Return Loss F = 12.5 – 17 GHz 12 dB PWR Output Power @ Pin = +15dBm F = 12.5 – 17 GHz 34.0 dBm PAE Power Added Efficiency @ Pin=+15dBm F = 12.5 – 17 GHz 31 % Notes Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. TABLE IV THERMAL INFORMATION Parameter RQJC Thermal Resistance (Channel to Backside of Carrier) Test Conditions VD = 7.5V ID = 650mA PDISS = 4.88W TBASE = 70°C TCH (°C) RQJC (°C/W) MTTF (hrs) 130.7 12.44 5.5E+6 Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70°C baseplate temperature. Worst case conditions with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 TGA2510-EPU Typical Fixtured Performance Id=650mA 30 25 S21 (dB) 20 Vd=7.5V Vd=5V 15 10 5 0 10 11 12 13 14 15 16 17 18 19 20 17 18 19 20 Frequency (GHz) 0 -2 -4 S11 (dB) -6 -8 -10 -12 -14 Vd=7.5V Vd=5V -16 -18 -20 10 11 12 13 14 15 16 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 TGA2510-EPU Typical Fixtured Performance Id=650mA 0 -2 Vd=7.5V Vd=5V -4 S22 (dB) -6 -8 -10 -12 -14 -16 -18 -20 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 36 Vd=5V Vd=7.5V 35 P2dB (dBm) 34 33 32 31 30 29 28 27 26 10 11 12 13 14 15 16 17 18 19 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 TGA2510-EPU Typical Fixtured Performance Id=650mA 36 Vd=5V Vd=7.5V 35 34 Psat (dBm) 33 32 31 30 29 28 27 26 10 11 12 13 14 15 16 18 19 Frequency (GHz) 60 55 Vd=5V Vd=7.5V 50 PAE @ P2dB (%) 17 45 40 35 30 25 20 15 10 5 0 10 11 12 13 14 15 16 17 18 19 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 1700 Vd=7.5V 37.5 1600 35.0 1500 32.5 1400 30.0 1300 27.5 1200 25.0 1100 12.5 GHz 13 GHz 14 GHz 16 GHz 22.5 20.0 17.5 Id (mA) 40.0 Pout (dBm) TGA2510-EPU Typical Fixtured Performance Id=650mA 1000 900 800 15.0 700 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) Vd=5V 32.5 Pout (dBm) 1500 1400 30.0 1300 27.5 1200 25.0 1100 22.5 1000 20.0 900 12.5 GHz 13 GHz 14 GHz 16 GHz 17.5 15.0 12.5 Id (mA) 35.0 800 700 600 10.0 500 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 Mechanical Drawing TGA2510-EPU Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 TGA2510-EPU Power Detector +5V 40KW 40KW External Vref Vdet Chip 5pF 50W DUT 0.6 RF out TGA2510 Power Detector @ 14GHz Vref-Vdet (V) 0.5 0.4 0.3 0.2 0.1 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Pout (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 TGA2510-EPU Chip Assembly & Bonding Diagram Vd 100pF Off chip R=10W Off chip C=0.1mF Input TFN Output TFN Vg Off chip R=10W 100pF Off chip C=0.1mF GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information July 22, 2003 TGA2510-EPU Assembly Process Notes Reflow process assembly notes: · · · · · Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: · · · · · · · Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: · · · · Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200°C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com