TQM 7M4014 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Package Outline: Description: TQS Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. It includes internal closed-loop power control. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. 1.32±.10 6.9 2.4 3.1 3.9 4.5 5.3 5.9 9.9 9.1 8.4 8.5 7.6 6.9 6.1 5.4 4.6 3.9 3.1 2.4 1.5 1.6 0.9 0.1 Vcc2 4.0 1.6 0,0 Description: DCS/PCS-in 1 Band select 2 16 Tx enable 3 15 V batt. 4 V reg. 5 13 V ramp 6 12 Cell/GSM in 7 20 19 18 14 ASIC 8 9 17 10 11 DCS/PCS-out Vcc Cell/GSM out Vcc2 The module incorporates two highly-integrated InGaP power amplifier die with a CMOS controller. Each amplifier has three gain stages with on-die interstage matching implemented with a high Q passives technology for optimal performance. The CMOS controller implements a fully integrated closed-loop power control within the module. This eliminates the need for any external couplers, power detectors, current sensing etc., to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable and band select inputs. Excellent performance is achieved across the 824 – 849 MHz, 880 – 915 MHz, 1710 – 1785 MHz, and 1850 – 1910 MHz bands. Module construction is a low-profile overmolded land-grid array on laminate. 0.9 1.6 0.9±.05 0.1 Features: • Very compact size – 10×7×1.4 mm3. • High efficiency – typical GSM850 47%, GSM900 56%, DCS 51%, PCS 50%. • Positive supply voltage – 2.9 to 4.5 V. • 50 Ω input and output impedances. • GPRS class 12 compatible. • CMOS band select and internal closed-loop power control. • High-reliability InGaP technology. • Ruggedness 10:1. • Few external components. 7M4014 C352 0301 A213505 Dimensions in mm Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 2 Absolute Maximum Ratings: Parameter Symbol Min. Max. Units Vbat Ibat Vramp δ VSWR Tc -0.3 Vdc -25 6.0 2.4 2.2 50 10:1 85 Ts Pin -55 150 ºC 11.5 dBm Supply voltage DC supply current Power control voltage Duty cycle at max. power Output load Operating case temperature Storage temperature Input power -0.3 A V % ºC Note: The amplifier will survive over the full range specified for any individual input, while other parameters are nominal and with no RF input. Operating Parameters: Parameter Supply voltage Supply current Band select voltage Txen High GSM DCS/PCS Tx enable input Low Symbol Min. Typ. Max. Units Vbat 2.9 3.5 4.5 Vdc A V Ibat Vbs-L 0 0.5 Vbs-H Txen 2 3.0 0 0.5 V 2 2.7 3.0 2.9 V High Regulator voltage Regulator current Vreg Txen Low 1.8 Ireg Txen High Leakage current Txen Low, Vramp = 0.19V, BS=Low Il Leakage current Txen Low, Vramp = 0.19V, BS=High Il 2.8 µA 10 160 250 1 10 µA 40 µΑ Moisture Sensitivity Levels: Required Moisture Sensitivity Level is MSL 3, 240C minimum. Moisture sensitivity classification will be conducted in accordance with JEDEC J_STD_020B. Table 5.1 of JEDEC J_STD_020B identifies the floor life for given levels of MSL classification. Floor life is defined as the time from removal of a device from dry pack until it absorbs sufficient moisture to be at risk during re-flow soldering. Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 3 Typical Performance: GSM850 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vramp = 1.6 V, Pin = 2 dBm, Duty Cycle =25%, Tc = 25ºC Parameter Frequency Range Input Power for Pout max. Output Power Symbol Min. f 824 Pin 0.0 33.0 2.0 34.5 31.0 32.6 47 Pout Typ. Max. Units 849 MHz 5.0 dBm dBm Conditions Vbat = 2.9 V, Pin = Pin min. Tmin ≤ Tc ≤ Tmax Power Added Efficiency η 40 Power Control Voltage Vramp 0.2 Power Control Current Iramp Power Control Range 33 Input VSWR Forward Isolation Harmonics % 1.6 V 50 µA 36 dB 1.5:1 2.5:1 Iso -45 -30 2f0 -23 -5.0 3f0 -20 -10.0 Ruggedness Vramp min ≤ Vramp ≤ Vramp max 0 ≤ Pout ≤ 34.5 dBm Txen = L, Pin ≤ Pin max -10.0 > 3f0 Rx noise power: 869 - 879 MHz 879 - 894 MHz Stability dBm dBm Pout = Pout max. -84 -85 -74.0 -82.0 8:1 10:1 dBm RBW = 100 kHz Pout > 5 dBm All phase angles Pout ≤ 34.2 dBm All phase angles Pout ≤ 34.2 dBm Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 4 GSM900 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vramp = 1.6 V, Pin = 2 dBm, Duty Cycle =25%, Tc = 25ºC Parameter Frequency Range Input Power for Pout max. Output Power Symbol Min. Typ. f Pin Pout 880 0.0 34.5 2.0 35.0 32.0 33.5 50 0.2 56 33 36 Max. Units 915 5.0 MHz dBm dBm Vbat = 2.9 V, Pin = Pin min. Tmin ≤ Tc ≤ Tmax Power Added Efficiency Power Control Voltage Power Control Current Power Control Range Input VSWR Forward Isolation Cross-band Isolation η Vramp Iramp Iso Iso -45 -21 Harmonics 2f0 3f0 > 3f0 -25 -28 -5.0 -15.0 -10.0 dBm -83 -84 -74.0 -82.0 8:1 dBm Rx noise power: 925 - 935 MHz 935 - 960 MHz Stability Ruggedness Conditions 1.6 50 2.5:1 -30 -19 10:1 % V µA dB dBm dBm Pout = Pout max. Vramp min ≤ Vramp ≤ Vramp max 0 ≤ Pout ≤ 34.5 dBm Txen = L, Pin ≤ Pin max Pin = Pin max., Vbs = Low 1710 ≤ f ≤ 1785 MHz RBW = 100 kHz Pout > 5 dBm All phase angles Pout ≤ 34.2 dBm All phase angles Pout ≤ 34.2 dBm Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 5 DCS1800/PCS1900 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vramp = 1.6 V, Pin = 2 dBm, Duty Cycle = 25%, Tc = 25ºC Parameter Frequency Range Input Power for Pout max. Output Power Symbol Min. Typ. Max. Units f 1710 1850 0.0 MHz 2.0 1785 1910 5.0 32.0 33.3 29.5 31.2 Pin Pout 1710 - 1785 MHz Conditions dBm dBm Vbat = 2.9 V, Pin = Pin min. Tmin ≤ Tc ≤ Tmax 1850 - 1910 MHz 31.5 32.5 29.5 30.6 Vbat = 2.9 V, Pin = Pin min. Tmin ≤ Tc ≤ Tmax Power Added Efficiency 1710 - 1785 MHz 1850 - 1910 MHz Power Control Voltage Power Control Current Power Control Range η 45 Vramp Iramp Iso 2f0 3f0 > 3f0 Rx noise power Pout = Pout max. Tc = 25°C 51 50 0.2 33 Input VSWR Forward Isolation Harmonics % 1.6 50 36 2.0:1 2.5:1 -38 -30 -20 -20 -5.0 -5.0 -10.0 -83.0 -77.0 Stability 8:1 Ruggedness 10:1 V µA dB dBm dBm dBm Vramp min ≤ Vramp ≤ Vramp max 5 ≤ Pout ≤ Pout max Txen = H, Pin ≤ Pin max RBW = 100 kHz Pin = Pin min., Pout = Pout max. All phase angles Pout ≤ 32 dBm All phase angles Pout ≤ 32 dBm Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 6 Pin Out: Vcc2 Top view DCS/PCS-in 1 Band select 2 16 Tx enable 3 15 V batt. 4 V reg. 5 13 V ramp 6 12 Cell/GSM in 7 20 19 18 ASIC 9 14 10 11 DCS/PCS-out Vcc Cell/GSM out Vcc2 8 17 Pin Symbol RFin - DCS/PCS 1 Vbs 2 Txen 3 Vbat 4 Vreg 5 Vramp 6 RFin - Cell/GSM 7 Vcc2 8 RFout - Cell/GSM 11 Vcc 14 RFout - DCS/PCS 17 Vcc2 20 All other pins are ground Description DCS/PCS power in Band select voltage Transmit enable Supply voltage Regulated voltage input DAC voltage input GSM850/900 power in Vcc voltage input GSM850/900 power out Vcc voltage output DCS/PCS power out Vcc voltage input Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 7 Schematic: P-in DCS /PCS Input Match Interstage Match Interstage Match Output Match P-out DCS /PCS ESD Bias Network Vbat Vramp Tx enable Vreg ASIC Vbs Bias Network ESD P-in Cell /GSM Input Match Interstage Match Interstage Match Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice Output Match P-out Cell /GSM 8 Tape and Reel Information: PIN 1 position Copyright © 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 9