PBL 4032001 05 January PBL 403 05 Multiband GSM Power Amplifier Description. Key features. The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or PCS1900 frequencies. The circuit uses an analog control signal to control the output power level. The circuit is housed in a specially designed QSOP28 (150 mil body) package with no special mounting requirements. The circuit is manufactured in a high performance MESFET process that ensures ruggednes for environmental variations. • One IC handles GSM900, DCS 1800 and PCS1900 bands. • Low cost solution. • Inputs matched to 50 Ω • Digital band select function. • Analog gain control. • Proven GaAs MESFET-reliability. • Tape and Reel. • SMD QSOP 28 package. VD1_DCS VD2_DCS CA VDC Current generator VD3_DCS RFIN_GSM RFOUTGSM P B L 4 0 3 0 5 RFIN_DCS BIAS VD1_GSM Figure 1. Block diagram. VD2_GSM VD3GSM VNEG VSEL VAPC Figure 2. Package outlook. 1 PBL 403 05 Maximum Ratings: TAMB = + 25°C unless otherwise stated. Parameter Conditions Supply voltage short supply spike Symbol Min. Typ. Max. Unit VDD 6.0 V Supply voltage VDD 5.0 V Power control voltage VAPC 4.2 V Operating Case Temperature TCASE -25 +80 °C Storage Temperature Range TSTORAGE -30 +100 °C Electrical Characteristics for PA in GSM 900 mode: VCC = 3.2 V, TAMB = + 25°C, Z = 50 Ω, PIN = 10 dBm, f = 880 - 915 MHz and VAPC adjusted to give POUT = 34.5 dBm unless othervise noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. VNEG= -4.0 V, VSEL= 0.0 V. Parameter Conditions Symbol Min. Typ. Output Power VAPC = 3.15 V POUT 34.5 34.7 PAE 50 Power added efficiency Max. Unit dBm 53 % 2 nd harmonic - 0 dBm < POUT < 34.5 dBm 2 fo -7.0 0 dBm 3 rd harmonic - 0 dBm < POUT < 34.5 dBm 3 fo -27 0 dBm Isolation PIN = 11.5 dBm, VAPC <= 0.5 V TAMB = -25 °C to +75 °C -30 -20 dBm Power degradation PIN = 8.5 dBm, VSEL= 0.6 V, 33 dBm VAPC = 2.8 V, TAMB = -25 °C to +75 °C Stability and leakage spurious Output VSWR = 6:1 all phases All combinations of following parameters: POUT=5 to 34.5dBm(50Ω) No parasitic oscillations when IDD < 2.2 A All spurious < -36 dBm VDD= 2.7 V to 5.1 V TAMB = -25 °C to +75 °C Noise power 935 - 960 MHz 925 - 935 MHz -90 -78 RBW = 30 kHz dBm dBm Input S11 VAPC = 0.5 V, -5.2 -5.0 dBm Input S11 POUT = 34.5dBm -12 -6.0 dBm Electrical Characteristics for PA in DCS 1800 mode: VCC = 3.2 V, TAMB = + 25°C, Z = 50 Ω, PIN = 9 dBm, f = 1710 - 1785 MHz / 1850 - 1910 MHz and VAPC adjusted to give POUT = 31.5 dBm unless othervise noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. VNEG= -4.0 V, VSEL= 2.0 V. Parameter Output Power Conditions VAPC = 3.15 V Symbol POUT Min. 31.5 Power added efficiency POUT = 31.5 dBm PAE 37 2 nd harmonic - 0 dBm < POUT < 31.5 dBm 2 fo 3 rd harmonic - 0 dBm < POUT < 31.5 dBm 3 fo Isolation PIN = 10.5 dBm, VAPC = 0.5 V TAMB = -25 °C to +75 °C Power degradation PIN = 7.5 dBm, VDD = 2.85 V VAPC = 2.8 V, TAMB = -25 °C to +75 °C 2 30 Typ. 31.7 Max. Unit dBm -8.0 0 dBm -15 0 dBm -35 -30 dBm 41 30.5 % dBm PBL 403 05 Parameter Conditions Symbol Min. Typ. Max. Stability and leakage spurious Output VSWR = 6:1 all phases All combinations of following parameters: POUT=5 to 31.5dBm(50Ω) No parasitic oscillations when IDD < 2.20 A All spurious < -36 dBm VDD= 2.7 V to 5.1 V RBW = 3 MHz Unit TAMB = -25 °C to +75 °C Noise power 1805 - 1880 MHz 935 - 960 MHz 925 - 935 MHz Input S11 VAPC = 0.5 V, Input S11 POUT = 31.5dBm -76 -82 -70 dBm dBm -5.0 -4.0 dBm -14 -6.0 dBm Typ. Max. Unit -20 -30 dBm dBm -18 -30 -15 -25 dBm dBm Typ. Max. Unit 34.5 31.5 dBm dBm RBW = 30 kHz Common specifications: Parameter Conditions Isolation at GSM RF output when DCS is active f = f0 f = 2 • f0, f0 = 1750 - 1785 MHz Isolation at DCS RF output when GSM is active f = 2 • f0 f = 3 • f0, f0 = 880 - 915 MHz Symbol Min. Power regulation characteristics: Parameter Conditions Power control range GSM: VAPC = 0.5 - 3.15 V DCS: VAPC = 0.5 - 3.15 V Symbol Min. -20 -30 Power control slope VAPC = 0.5 - 3.15 V 150 dB/V Switching time Step in Vref giving POUT = -15 to 2 µs 32.5 dBm, up and down Power control current consumption VAPC <= 3.15 V IAPC 4 5 mA VSEL = 0 - 3 V Band select current consumption VSEL = 0 - 3 V, VAPC <= 3.15 V ISEL 0.01 0.1 mA Negative supply current consumption VSEL = 0 V, VAPC <= 3.15 V INEG 5.5 7.0 mA Current generator: Parameter Conditions Symbol Typ. Max. Unit Input resistance VDC- VCA < 0.8 V RON Min. 100 150 Ω Charge current VDC = 1.5 - 5.0 V, VCA = 0 V IGSAT 6.7 10 mA 3 PBL 403 05 CA 1 28 VDC VNEG 2 27 GND VSEL 3 26 VD3_DCS2 VD3_DCS1 VAPC 4 25 VD1_DCS 5 24 GND GND 6 23 GND RFIN_DCS 7 22 GND 8 21 GND RFIN_GSM 9 20 VD2_GSM GND 10 19 GND VD1_GSM 11 18 GND VD2_DCS GND 12 17 RFOUT_GSM2 VD3_GSM1 13 16 RFOUT_GSM1 VD3_GSM2 14 15 GND Figure 3. Pin configuration. Terminal Symbol Function 1 2 3 4 5 6,8,10,12,15, 18,19,21,23, 24,27 7 9 11 13, 14 16,17 20 22 25,26 28 CA VNEG VSEL VAPC VD1_DCS GND Separate Current Source +terminal Negative supply Digital band select function Analog output power control Power supply for 1st stage of high band chain RFIN_DCS RFIN_GSM VD1_GSM VD3_GSM RFOUT_GSM VD2_GSM VD2_DCS VD3_DCS VDC AC coupled 50ohm input AC coupled 50ohm input Power supply for 1st stage of low band chain Power supply for output stage stage of low band chain 4 Power supply for 2nd stage of low band chain Power supply for 2nd stage of high band chain RF output and power supply for output stage of high band chain Separate Current Source -terminal PBL 403 05 R1A_DCS R1A_GSM 2.0 40 1.8 40 1.8 30 1.6 30 1.6 20 1.4 20 1.4 10 1.2 10 1.2 0 1.0 0 1.0 -10 0.8 -10 0.8 -20 0.6 -20 0.6 0.4 -30 Vneg = -4.0V -30 Vneg = -4.0V Vdd = 3.2V Pin = 10dBm 0.2 -40 0 -50 Pin = 9dBm freq= 175 0M Hz freq = 900MHz -50 0 1 2 3 VAPC (V) Figure 4. Pout and IDD versus VAPC at 900 MHz. 0.4 V dd= 3.2V V sel=2 .0V Vsel = 0.0V -40 IDD (A) 50 POUT (dBm) 2.0 IDD (A) POUT (dBm) 50 4 0.2 0 0 1 2 3 4 VAPC (V) Figure 5. Pout and IDD versus VAPC at 1750 MHz. 5 PBL 403 05 VDD VAPC VDD VSEL VNEG CA VDC C25 1µF C26 1µF C27 33nF C11 470pF L2 18nH 1 2 3 MS36 l = 3.0mm w = 0.3mm 470pF 5 VAPC VD1_DCS 6 sma 50Ω µstrip 7 RFIN_DCS 8 50Ω µstrip 9 sma RFIN_GSM 10 C14 11 MS27 470pF l = 4.0mm w = 0.3mm C3 470pF MS29 14 VD3_DCS2 VD3_DCS1 MS33 25 l = 1mm w = 1.5mm 23 VD2_DCS 22 21 VD2_GSM 20 19 50Ω µstrip C4 C5 100pF 3.9pF sma C31 1µF MS35 l = 3mm w = 0.3mm C28 10pF C7 470pF MS32 l = 7mm w = 0.3mm C30 1µF 18 RFOUT_GSM2 VD3_GSM1 26 24 VD1_GSM 12 13 28 27 VSEL PBL 403 05 C15 4 VDC CA VNEG RFOUT_GSM1 VD3_GSM2 17 16 15 C23 MS31 l = 1.5mm w = 1.5mm 8.2pF C1 7.5pF L7 4.7nH 50Ω µstrip C2 100pF sma l = 6.0mm w = 1.0mm l = 3.0mm w = 0.3mm L9 C33 1µF 120nH C32 1µF VDD Figure 6. Verification board schematic. Figure 7. Verification board layout. 6 MS = Micro Strip (+measurements) The specifications apply to performance measured in test fixture. PBL 403 05 Package drawing, QSOP 28 D e Dim. E H millimeters min. max. inches min. max. A 1.35 1.75 0.532 0.688 A1 0.10 0.25 0.004 0.0098 B 0.21 0.2 0.31 0.008 0.012 C 0.19 0.25 0.0075 0.0098 D 9.80 9.98 0.386 0.393 E 3.81 3.99 0.150 0.157 e 0.635mm H 5.80 6.20 0.2284 0.2240 L 0.41 0.4 1.27 0.016 0.050 0.025 inch ref. α = 0−8 deg. Pin no 1 B 45 deg. α A A1 C L Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Ericsson Microelectronics AB. These products are sold only according to Ericsson Microelectronics AB's general conditions of sale, unless otherwise confirmed in writing. Specifications subject to change without notice. 1522-PBL 403 10 Uen Rev.A © Ericsson Microelectronics AB January 2001 Ericsson Microelectronics AB S-164 81 Kista-Stockholm, Sweden Telephone: (08) 757 50 00 www.ericsson.se/microe 7