TR2.5 SERIES SILICON TRIACS l Sensitive Gate Triacs l 2.5 A RMS l Glass Passivated Wafer l 400 V to 800 V Off-State Voltage l Max IGT of 5 mA (Quadrant 1) TO-220 PACKAGE (TOP VIEW) MT1 1 MT2 2 G 3 Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TR2.5-400-14 TR2.5-600-14 Repetitive peak off-state voltage (see Note 1) TR2.5-700-14 UNIT 400 600 VDRM V 700 TR2.5-800-14 800 IT(RMS) 2.5 A Peak on-state surge current full-sine-wave (see Note 3) ITSM 12 A Peak on-state surge current half-sine-wave (see Note 4) ITSM 14 A Peak gate current IGM ±0.2 A Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s) PGM 1.3 W Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) PG(AV) 0.3 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C TL 230 °C Average gate power dissipation at (or below) 85°C case temperature (see Note 5) Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 100 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IGTM VGTM Repetitive peak off-state current MIN TEST CONDITIONS VD = rated VDRM IG = 0 TYP TC = 110°C MAX UNIT ±1 mA Vsupply = +12 V† RL = 10 W tp(g) > 20 m s 5 Peak gate trigger Vsupply = +12 V† RL = 10 W tp(g) > 20 m s -8 current Vsupply = -12 V† RL = 10 W tp(g) > 20 m s -10 Vsupply = -12 V† RL = 10 W tp(g) > 20 m s Vsupply = +12 V† RL = 10 W tp(g) > 20 m s 0.9 2.5 Peak gate trigger Vsupply = +12 V† RL = 10 W tp(g) > 20 m s -1.2 -2.5 voltage Vsupply = -12 V† RL = 10 W tp(g) > 20 m s -1.2 -2.5 Vsupply = -12 V† RL = 10 W tp(g) > 20 m s 1.2 † All voltages are with respect to Main Terminal 1. mA 25 V TR2.5 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER VTM Peak on-state voltage IH Holding current IL Latching current dv/dt dv/dt(c) Critical rate of rise of off-state voltage Critical rise of commutation voltage MIN TEST CONDITIONS TYP MAX UNIT ±1.9 V ITM = ±3.5 A IG = 50 mA (see Note 6) Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 30 Vsupply = -12 V† IG = 0 Init’ ITM = - 100 mA -30 Vsupply = +12 V† Vsupply = -12 V† 40 (see Note 7) -40 VDRM = Rated VDRM IG = 0 TC = 110°C VDRM = Rated VDRM ITRM = ±3.5 A TC = 85°C ±50 mA mA V/µs ±2 V/µs † All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 W , tp(g) = 20 m s, tr = £ 15 ns, f = 1 kHz. thermal characteristics PARAMETER Rq Rq JC Junction to case thermal resistance JA Junction to free air thermal resistance MIN TYP MAX UNIT 10 °C/W 62.5 °C/W TR-2.5 SERIES SILICON TRIACS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.