TR8 SERIES SILICON TRIACS l 8 A RMS, 70 A Peak l Glass Passivated Wafer l 400 V to 800 V Off-State Voltage l Max IGT of 50 mA (Quadrants 1 - 3) TO-220 PACKAGE (TOP VIEW) MT1 1 MT2 2 G 3 Pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TR8-400-70 TR8-600-70 Repetitive peak off-state voltage (see Note 1) TR8-700-70 TR8-800-70 UNIT 400 600 VDRM V 700 800 IT(RMS) 8 A Peak on-state surge current full-sine-wave (see Note 3) ITSM 70 A Peak on-state surge current half-sine-wave (see Note 4) ITSM 80 A Peak gate current IGM ±1 A Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s) PGM 2.2 W Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) PG(AV) 0.9 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C TL 230 °C Average gate power dissipation at (or below) 85°C case temperature (see Note 5) Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IGTM VGTM Repetitive peak off-state current MIN TEST CONDITIONS VD = rated VDRM IG = 0 TYP TC = 110°C MAX UNIT ±2 mA Vsupply = +12 V† RL = 10 W tp(g) > 20 m s 2 50 Peak gate trigger Vsupply = +12 V† RL = 10 W tp(g) > 20 m s -12 -50 current Vsupply = -12 V† RL = 10 W tp(g) > 20 m s -9 -50 Vsupply = -12 V† RL = 10 W tp(g) > 20 m s 20 Vsupply = +12 V† RL = 10 W tp(g) > 20 m s 0.7 2 Peak gate trigger Vsupply = +12 V† RL = 10 W tp(g) > 20 m s -0.8 -2 voltage Vsupply = -12 V† RL = 10 W tp(g) > 20 m s -0.8 -2 Vsupply = -12 V† RL = 10 W tp(g) > 20 m s 0.9 2 † All voltages are with respect to Main Terminal 1. mA V TR8 SERIES SILICON TRIACS electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER VTM Peak on-state voltage IH Holding current IL Latching current dv/dt(c) Critical rise of commutation voltage MAX UNIT V IG = 50 mA (see Note 6) ±1.6 ±2.1 Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 5 30 Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -9 -30 Vsupply = +12 V† off-state voltage TYP ITM = ±12 A mA 50 (see Note 7) Vsupply = -12 V† Critical rate of rise of dv/dt MIN TEST CONDITIONS mA -50 VDRM = Rated VDRM IG = 0 TC = 110°C VDRM = Rated VDRM ITRM = ±12 A TC = 85°C ±100 V/µs ±5 V/µs † All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 W , tp(g) = 20 m s, tr = £ 15 ns, f = 1 kHz. thermal characteristics MAX UNIT Rq JC Junction to case thermal resistance PARAMETER MIN TYP 1.8 °C/W Rq JA Junction to free air thermal resistance 62.5 °C/W TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs CASE TEMPERATURE CASE TEMPERATURE 10 100 Vsupply IGTM VAA = ± 12 V + + - RL = 10 W t p(g) = 20 µs + + 10 1 0·1 -60 -40 -20 0 20 40 60 80 100 120 VAA = ± 12 V Vsupply IGTM VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA 1000 + + - RL = 10 W t p(g) = 20 µs + + 1 0·1 -60 -40 -20 0 20 40 60 80 TC - Case Temperature - °C TC - Case Temperature - °C Figure 1. Figure 2. 100 120 TR8 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS HOLDING CURRENT vs GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT CASE TEMPERATURE 1000 10 VAA = ± 12 V IG = 0 Initiating ITM = 100 mA VGF - Gate Forward Voltage - V IH - Holding Current - mA Vsupply + 100 10 1 0·1 -60 -40 -20 0 20 40 60 80 100 1 0·1 QUADRANT 1 0·01 0·0001 0·001 120 TC - Case Temperature - °C 0·1 Figure 3. Figure 4. LATCHING CURRENT vs SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION CASE TEMPERATURE 1 100 Vsupply IGTM + + - + + 100 10 -40 -20 0 TC £ 85 °C VAA = ± 12 V ITSM - Peak Full-Sine-Wave Current - A IL - Latching Current - mA 0·01 IGF - Gate Forward Current - A 1000 1 -60 IA = 0 TC = 25 °C 20 40 60 80 TC - Case Temperature - °C Figure 5. 100 120 No Prior Device Conduction Gate Control Guaranteed 10 1 1 10 100 Consecutive 50-Hz Half-Sine-Wave Cycles Figure 6. 1000 TR8 SERIE S SILICON TRIACS TYPICAL CHARACTERISTICS MAX RMS ON-STATE CURRENT vs MAX AVERAGE POWER DISSIPATED vs RMS ON-STATE CURRENT CASE TEMPERATURE P(av) - Maximum Average Power Dissipated - W IT(RMS) - Maximum On-State Current - A 10 9 8 7 6 5 4 3 2 1 32 TJ = 110 °C 28 Conduction Angle = 360 ° Above 8 A rms See ITSM Figure 24 20 16 12 8 4 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 TC - Case Temperature - °C IT(RMS) - RMS On-State Current - A Figure 7. Figure 8. 14 16 PARAMETER MEASUREMENT INFORMATION VAC VAC L1 ITRM IMT2 IMT2 C1 50 Hz VMT2 VDRM DUT RG R1 VMT2 IG 10% dv/dt 63% IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 µs. Figure 9. TR8 SERIES SILICON TRIACS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.