CHA2292 17-24GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description V5 Vd2,3,4 The CHA2292 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg1 Vg2,3,4 Vc Typical on wafer measurements :Gain & NF 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Main Features • • • • • • Frequency range : 17-24GHz 2.8dB Noise Figure. 25dB gain Gain control range: 15dB DC power consumption: 160mA @ 5V Chip size : 2.32 X 1.23 X 0.10 mm Gain (dB) NF (dB) 16 17 18 19 20 21 22 23 Frequency (GHz) Main Characteristics Tamb. = 25°C Parameter Fop Min Operating frequency range Typ 17 Max Unit 24 GHz G Small signal gain 25 dB NF Noise figure 2.8 dB Gain control range with Vc variation 15 dB Bias current 160 mA Gctrl Id ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22922108 - 18-Apr.-02 1/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24 17-24GHz LNA VGA CHA2292 Electrical Characteristics for Broadband Operation Tamb = +25°C, V5=Vd2,3,4= 5V Symbol Fop Parameter Min Operating frequency range G Typ 17 Max Unit 24 GHz Small signal gain (1) 25 dB Small signal gain flatness (1) ±1 dB Is Reverse isolation (1) 50 dB NF Noise figure with Vc=1.2V 2.8 dB Gctrl Gain control range versus Vc 15 dB P1dB Output power at 1dB compression with Vc=1.2V 11 dBm ∆G VSWRin VSWRout Vd Input VSWR (1) 3.0:1 Output VSWR (1) 2.5:1 DC voltage V5= Vd2,3,4 Vc -1.5 5 [-0.7, +1.2] V V +1.3 Id1 Bias current (2) with Vc=1.2V 35 mA Id Bias current total (3) with Vc=1.2V 160 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjusted to 35mA with Vg1 voltage. (3) With Id1=35mA, adjust Vg2,3,4 voltage for a total drain current around 160mA. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 5.5 V Vc Control bias voltage 1.5 V Id Drain bias current 250 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22922108 - 18-Apr.-02 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 17-24GHz LNA VGA CHA2292 Typical on wafer Measurements Bias Conditions : 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 V5=Vd2,3,4= 5V, Vg1 for Id1= 35mA, Vg = -0.3V, Vc=1.2V Gain (dB) NF (dB) 16 17 18 19 20 21 22 23 24 Frequency (GHz) Gain & Noise Figure versus frequency In jig Measurements Bias Conditions : V5=Vd2,3,4= 5V, Vg1= Vg = -0.3V, Vc= 1.2V All these measurements include the jig losses (about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power). 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -30 Gain (dB) 18GHz Pout (dBm) 20GHz -25 -20 -15 -10 Input power (dBm) Gain & Output power @ 18-20 GHz Ref. : DSCHA22922108 - 18-Apr.-02 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 17-24GHz LNA VGA 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 CHA2292 Gain (dB) 22GHz Pout (dBm) 24GHz -30 -25 -20 -15 -10 Input power (dBm) Gain & Output power @ 22–24 GHz 10 30 9 26 G a i n Noise Figure (dB) 7 22 18 6 14 5 10 4 6 Gain (dB) 8 NF 3 2 Vc=+1.2V Vc=+0.8V Vc= 0V Vc=-0.4V 2 1 -2 -6 0 -10 17 18 19 20 21 22 23 24 Frequency ( GHz) Gain & Noise Figure versus Vc Ref. : DSCHA22922108 - 18-Apr.-02 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 17-24GHz LNA VGA CHA2292 Chip Assembly and Mechanical Data 234 234 Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad:100 x 100 µm Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22922108 - 18-Apr.-02 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice CHA2292 Ordering Information Chip form : CHA2292-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22922108 - 18-Apr.-02 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice