CHV2240 Multifunction : K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC Description Main Features n K-band VCO + Q-band frequency multiplier n External resonator for centre frequency control and phase noise optimisation n High quality oscillator when coupled to a dielectric resonator n On-chip varactor for electronic control n Chip size 2.68x1.4 x 0.1 mm +V -V F_out/2 HIGH Q RESONATOR RF_out ERC x2 (F_out) V_tune Multifunction block diagram 38,204 38,202 Output frequency (GHz) The CHV2240 is a monolithic multifunction proposed for frequency generation at 38GHz. It integrates a K-band Voltage Controlled Oscillator, a Q-band frequency multiplier and buffer amplifiers. For performance optimisation, an external port (ERC) allows a passive resonator coupling to the oscillator (at half output frequency). This chip has been especially designed to be coupled to a high Q dielectric resonator. All the active devices are internally self biased. The circuit is manufactured with the PHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. T=-40°C 38,2 38,198 38,196 T=+100°C T=+25°C 38,194 38,192 38,19 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 Vtune (V) Typical tuning characteristic Main Characteristics Tamb = +25°C Symbol F_out Parameter Output frequency Min Typ Max Unit 37.5 38.25 39 GHz F_t Frequency tuning range (high Q resonator) 5 MHz Pn Oscillator phase noise @ 100kHz (38GHz) -100 dBc/Hz 9 dBm Pout Output power ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. :DSCHV22400096 -05-Apr-00 1/8 Specifications subject to change without notice united monolithic semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 1,8 2 K-band VCO / Q-band Multiplier CHV2240 Electrical Characteristics Full temperature range, used according to section “Typical assembly and bias configuration” Symbol F_out F_osc F_stab Pn P_out F_t Vt I_vt VSWR_out +V +I -V -I Top Parameter Output frequency Oscillator frequency (1) Frequency stability (1) , (2) Phase noise @ 100kHz @ 38GHz (2) Output power Frequency tuning range (2) Voltage tuning range Tuning current VSWR at output port Positive supply voltage Positive supply current Negative supply voltage Negative supply current Operating temperature range Min 37.5 6 4.4 -4.6 Typ 38.25 F_out/2 4 -100 9 5 2:1 4.5 120 -4.5 3 -40 Max 39 Unit GHz 0-2 0.5 ppm/°C dBc/Hz dBm MHz V mA 4.6 180 -4.4 10 +100 V mA V mA °C (1) The centre frequency is given by the external passive resonator (2) This characteristic is obtained by using an external dielectric resonator (see section “Proposed External High Q resonator”) Absolute Maximum Ratings (1) Tamb = +25°C Symbol P_erc +V -V +I -I Top Tstg (1) (2) Parameter RF input power on ERC port (2) Positive supply voltage Negative supply voltage Positive supply current Negative supply current Operating temperature range Storage temperature range Values 13 5 -5 200 10 -40 to +100 -55 to +155 Unit dBm V V mA mA °C °C Operation of this device above anyone of these parameters may cause permanent damage. Duration < 1s Ref. :DSCHV22400096 -05-Apr-00 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K-band VCO / Q-band Multiplier CHV2240 Chip Mechanical Data and Pin References 4 5 6 7 8 9 10 11 12 13 14 3 15 2 16 1 17 Unit = µm External chip size (layout size + dicing streets) = 2680 x 1400 Chip thickness = 100 +/- 10 HF Pads (2, 16) = 68 x 118 DC/IF Pads = 100 x 100 ♦ Pin number Pin name 1,3,15,17 2 4 5,13 6,7,8 9,10,11,12 14 16 ERC Vt -V +V GND RF_out Description Ground : should not be bonded. If required, please ask for more information. External Resonator Coupling Port Tuning voltage NC Negative supply voltage (connected together) Positive supply voltage (connected together) Ground (optional) RF output Ref. :DSCHV22400096 -05-Apr-00 dd-Mmm-yy 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K-band VCO / Q-band Multiplier CHV2240 Typical Assembly and Bias Configuration DC/IF lines Vt -V +V >= 120pF 4 5 6 7 8 9 >= 120pF 10 11 12 13 14 3 µ-strip line 15 2 µ-strip line 16 L_erc 1 17 L_out This drawing shows an example of assembly and bias configuration. All the transistors are internally self biased. For the RF pads the equivalent wire bonding inductance (diameter=25µm) have to be according to the following recommendation. Port ERC (2) RF_out (16) Equivalent inductance (nH) L_erc = 0.4 L_out = 0.4 Approximated wire length (mm) 0.5 0.5 For a micro-strip configuration a hole in the substrate is recommended for chip assembly. Ref. :DSCHV22400096 -05-Apr-00 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K-band VCO / Q-band Multiplier CHV2240 Proposed external high Q resonator This chip has been especially designed to be coupled to a high Q dielectric resonator. The resonance is given by a dielectric cylinder coupled to a 50Ω line. The size of the resonator gives the centre frequency and the space between the resonator and the line gives the loaded quality factor. The following drawing shows an example of external configuration. Alumina substrate : thickness=250µm Dielectric resonator 50 Ohm resistance d 3xl 4 5 6 7 8 9 10 11 12 13 14 3 15 2 1 via hole 16 17 2xl Additional information n Resonator reference example = MURATA /DRD036EC016. As the exact frequency is given by the resonator size but also by the environment (cavity size, substrate characteristics, parasitic couplings …), the final dimensions of the resonator have to be defined according to the definitive module design. Other kind of resonators can be used (from TEKELEC or TRANS-TECH). The temperature coefficient has to be chosen according to the environment. n Resonator coupling : d=0.2 to 0.3mm , l=1.5mm (quarter wave). These values have been used in the test fixture, of course they can be modified if the environment is different. The distance between the resonator and the edge of the substrate (close to MMIC) is proposed to be 3xl=4.5mm (3 quarter waves), theoretically only one is necessary but in this case the distance between resonator and MMIC is too low for automatic assembly. n 50Ω Ω line width on alumina (heigth=0.25mm) = 0.238mm n 50Ω Ω load on alumina : this load has to be as good as possible (low parasitic inductance). n Cavity size (mm) : 18 x 17 x 7 Ref. :DSCHV22400096 -05-Apr-00 dd-Mmm-yy 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K-band VCO / Q-band Multiplier CHV2240 External Resonator Coupling Port Information The external resonator has to be an equivalent series resonance. However, this impedance must also be compatible to the negative impedance of the oscillator ERC port in order to obtain the oscillation conditions and to avoid parasitic oscillations. Typical impedance of ERC port (Zerc) is given in the following tables. The diagrams show this impedance in a wider band. These values don’t include the wire bonding (self L_erc given in the section “Typical Assembly and Bias Configuration”). Vt=0V Vt=0V Vt=0V Vt=2V Vt=2V Ref. :DSCHV22400096 -05-Apr-00 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K-band VCO / Q-band Multiplier Ref. :DSCHV22400096 -05-Apr-00 7/8 CHV2240 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 K-band VCO / Q-band Multiplier CHV2240 Ordering Information Chip form : CHV2240-99F/00 Information furnished is believed to be accurate and reliable. However united monolithic semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors S.A.S. Ref. :DSCHV22400096 -05-Apr-00 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09