UOT MID

T-1 PACKAGE
NPN PHOTOTRANSISTOR
MID-38A22
Package Dimensions
Description
The MID-38A22 is a NPN silicon phototransistor mou-
Unit : mm (inches )
nted in a lensed , special dark plastic package.The lens-
4.6±0.30
(.181)
ing effect of the package allows an acceptance half view
3.1±0.20
(.122)
angle of 20° that is measured from the optical axis to the
half power point .
5.7
5.7
(.224)
2.5
2.5
(.10)
23.40MIN.
(.920)
Features
.50 TYP.
(.020)
l
Wide range of collector current
l
Lensed for high sensitivity
l
l
1.00MIN.
(.040)
E
Special T-1(3mm) package
C
2.54
(.100)
Good spectral matching to IRED (λp=940nm) type.
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 1.5 mm (.059") max
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ TA=25 C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260 C for 5 seconds
o
Unity Opto Technology Co., Ltd.
02/04/2002
MID-38A22
Optical-Electrical Characteristics
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Test Conditions
Ic=0.1mA
Ee=0
Ie=0.1mA
Ee=0
Ic=0.5mA
Symbol
V(BR)CEO
Min.
30
V(BR)ECO
5
Ee=0.1mW/cm
VCC =5V, RL=1KΩ
IC=1mA
VCE=10V
Ee=0
VCE=5V
nA
0.6
mA
0.01
0.001
40
80
120
TA - Ambient Temperature - oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
Vcc = 5 V
VRL= 1 V
F = 100 Hz
PW = 1 ms
80
40
0
4
6
8
10
IC Normalized Collector Current
Ee=0.1mW/cm
Vce =5
V
Ee =0.1 mW/cm2
@λ= 940 nm
-75
-25
25
75
125
TA - Ambient Temperature -oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
10
Vce = 5 V
8
6
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6
Ee - Irradiance - mW/cm2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
0° 10°
Relative Sensitivity
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Relative Collector Current (mA)
Iceo-Collector Dark Current -µA
Tr Tf Rise and Fall Time - µS
100
IC(ON)
1
2
µS
2
0.1
0
V
15
15
ICEO
10
120
0.4
Tr
Tf
100
160
V
VCE(SAT)
1000
200
Max.
2
Typical Optical-Electrical Characteristic Curves
0
Typ .
@ TA=25oC
Unit
V
20°
30°
40°
50°
60°
70°
80°
90°
1.0
0.9
0.8
0.5 0.3 0.1
0.2 0.4 0.6
FIG.5 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002