T-1 PACKAGE NPN PHOTOTRANSISTOR MID-38A22 Package Dimensions Description The MID-38A22 is a NPN silicon phototransistor mou- Unit : mm (inches ) nted in a lensed , special dark plastic package.The lens- 4.6±0.30 (.181) ing effect of the package allows an acceptance half view 3.1±0.20 (.122) angle of 20° that is measured from the optical axis to the half power point . 5.7 5.7 (.224) 2.5 2.5 (.10) 23.40MIN. (.920) Features .50 TYP. (.020) l Wide range of collector current l Lensed for high sensitivity l l 1.00MIN. (.040) E Special T-1(3mm) package C 2.54 (.100) Good spectral matching to IRED (λp=940nm) type. Notes : 1. Tolerance is ± 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 1.5 mm (.059") max 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260 C for 5 seconds o Unity Opto Technology Co., Ltd. 02/04/2002 MID-38A22 Optical-Electrical Characteristics Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Test Conditions Ic=0.1mA Ee=0 Ie=0.1mA Ee=0 Ic=0.5mA Symbol V(BR)CEO Min. 30 V(BR)ECO 5 Ee=0.1mW/cm VCC =5V, RL=1KΩ IC=1mA VCE=10V Ee=0 VCE=5V nA 0.6 mA 0.01 0.001 40 80 120 TA - Ambient Temperature - oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 80 40 0 4 6 8 10 IC Normalized Collector Current Ee=0.1mW/cm Vce =5 V Ee =0.1 mW/cm2 @λ= 940 nm -75 -25 25 75 125 TA - Ambient Temperature -oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE 10 Vce = 5 V 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Ee - Irradiance - mW/cm2 FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE 0° 10° Relative Sensitivity 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Relative Collector Current (mA) Iceo-Collector Dark Current -µA Tr Tf Rise and Fall Time - µS 100 IC(ON) 1 2 µS 2 0.1 0 V 15 15 ICEO 10 120 0.4 Tr Tf 100 160 V VCE(SAT) 1000 200 Max. 2 Typical Optical-Electrical Characteristic Curves 0 Typ . @ TA=25oC Unit V 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002