VML VG36648041BT-8

VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Description
The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is
fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.
Features
• Single 3.3V ( ± 0.3V ) power supply
• High speed clock cycle time : 7/8ns
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,& Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Quad Internal banks controlled by A12 & A13 (Bank select)
• Each Bank can operate simultaneously and independently
• LVTTL compatible I/O interface
• Random column access in every cycle
• X8 organization
• Input/Output controlled by DQM
• 4,096 refresh cycles/64ms
• Burst termination by burst stop and precharge command
• Burst read/single write option
The information shown is subject to change without notice.
Document : 1G5-0153
Rev.1
Page 1
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Pin Configuration
VG36648041
VDD
54
VSS
DQ7
3
53
52
NC
4
51
NC
DQ1
VSSQ
5
50
DQ6
6
49
VDDQ
NC
DQ2
7
8
48
47
DQ5
VDDQ
9
46
VSSQ
10
11
12
45
44
NC
VDDQ
DQ0
VDDQ
NC
NC
DQ3
VSSQ
1
2
VSSQ
DQ4
NC
VDD
13
43
42
14
41
VSS
NC
15
40
NC
WE
16
39
DQM
CAS
17
CLK
RAS
18
38
37
CS
A13/BA0
19
36
NC
20
35
A11
A12/BA1
21
34
A9
A10
A0
22
33
A8
23
32
A7
A1
24
31
A6
A2
25
26
30
29
A5
A3
VDD
27
28
VSS
NC
CKE
A4
Pin Description
VG36648041
Pin Name
Function
Pin Name
Function
A0 - A11
A12,A13
Address inputs
Bank select
DQM
DQ Mask enable
DQ0 ~ DQ7
Data - in/data - out
CLK
Clock input
RAS
Row address strobe
CKE
Clock enable
CAS
Column address strobe
CS
Chip select
WE
Write enable
VDDQ
Supply voltage for DQ
VSS
Ground
VSSQ
Ground for DQ
VDD
Power ( + 3.3V)
Document : 1G5-0153
Rev.1
Page 2
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Block Diagram
Clock
Generator
Address
CAS
WE
Document : 1G5-0153
DQM
Column Decoder &
Latch Circuit
Column
Address
Buffer
&
Burst
Counter
Data Control Circuit
Rev.1
Input & Output
Buffer
RAS
Bank A
Sense Amplifier
Control Logic
CS
Command Decoder
Mode
Register
Bank D
Bank C
Bank B
Row
Address
Buffer
&
Refresh
Counter
Latch Circuit
CKE
Row Decoder
CLK
Page 3
DQ
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Absolute Maximum D.C. Ratings
Symbol
Value
Unit
Voltage on any pin relative to Vss
Parameter
VIN, VOUT
-0.5 to + 4.6
V
Supply voltage relative to Vss
VDD, VDDQ
-0.5 to + 4.6
V
IOUT
50
mA
PD
1.0
W
Operating temperature
TOPT
0 to + 70
°C
Storage temperature
TSTG
-55 to + 125
°C
Short circuit output current
Power dissipation
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
peumanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Maximum A.C. Operating Requirements for LVTTL Compatible
Parameter
Symbol
Min
Max
Unit
Notes
Input High Voltage
VIH
2.0
VDDQ + 2.0
V
2
Input Low Voltage
VIL
VSSQ -2.0
0.8
V
2
Recommended DC Operating Conditions for LVTTL Compatible
Parameter
Symbol
Min
Typ
Max
Unit
VDD, VDDQ
3.0
3.3
3.6
V
Input High Voltage, all inputs
VIH
2.0
-
VDD + 0.3
V
Input Low Voltage, all inputs
VIL
-0.3
-
0.8
V
Supply Voltage
Capacitance
(Ta = 25°C, f = 1MHZ)
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Cin
2.5
3.75
5.0
pF
1
CLK pin
CCLK
2.5
3.25
4.0
pF
1
Data input/output capacitance
CI/O
4.0
5.25
6.5
pF
1
Input capacitance (All input pins except CLK pin)
Notes : 1. Capacitance measured with effective capacitance measuring method.
2. The overshoot and undershoot voltage duration is ≤ 3ns with no input clamp diodes.
Document : 1G5-0153
Rev.1
Page 4
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
DC Characteristics (Recommended Operating Conditions unless otherwise noted)
VG36648041B
Parameter
Symbol
Test Conditions
-7
-8
Unit
Min Max Min Max
CL = 3
130
130
mA
Operating current
ICC1
Burst length = 1
One bank active
CL = 2
130
130
tRC ≤ tRC(MIN.), Io = 0mA
Precharge standby
ICC 2P CKE ≤ VIH(MAX.) tCK = 10ns
current in power
ICC 2PS CKE ≤ V
down mode
IH(MAX.) tCK = ∞
Precharge standby current ICC 2N CKE
CKE ≥ V IH(MIN.) tCK = 10ns.
in Nonpower down mode
CS ≥ V IH(MIN.)
CKE
Input signals are changed one
time during 2 CLK cycles.
ICC 2NS CKE
CKE ≥ VV
, tCK = ∞
2
2
2
2
25
25
10
10
≤ VIL(MAX.), tCK = 10ns
7
7
≤ VIL(MAX.), tCK = ∞
CKE
CKE ≥ V IH(MAX.), tCK = 10ns
CS ≥ V IH(MIN.)
CKE
IH(MIN.)
Notes
1
mA
mA
CLK ≤ VIL(MAX.)
Input signals are stable.
Active standby current in
power down mode
ICC 3P
ICC 3PS CKE
5
5
Active standby current in
Nonpower down mode
ICC 3N
40
40
20
20
170
135
170
120
mA
2
220
200
mA
3
CKE
mA
mA
Input signals are changed
one time during 2CLKs.
≥ V IH(MIN.) tCK = ∞
CLE ≤ VIL(MAX.)
ICC 3NS CKE
CKE
Input signals are stable.
Operating current
(Burst mode)
ICC4
Refresh current
ICC5
tCK
CKE
≥ VtCK(MIN.), Io = 0mA
All banks Active
CL = 3
CL = 2
≥ tRC(MIN.)
CKE ≤ 0.2V
0 ≤ VIN ≤ VDD(MAX)
tRC
1
mA
-1
1
-1
1
µA
-1.5
1.5
-1.5
1.5
µA
VOL
0 ≤ VOUT ≤ VDD (MAX)
DQ# in Hi - Z., Dout disabled
IOL = 2mA
0.4
mA
4
VOH
IOH = -2mA
2.4
mA
4
Self refresh current
ICC6
Input leakage current
(Inputs)
ILI
Output leakage current
(I/O pins)
IIL
Output Low Voltage
Output High Voltage
1
Pins not under test = 0V
0.4
2.4
Notes : 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output
open. In addition to this, ICC1 is measured on condition that addresses are changed only one
time during t CK(MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output
open. In addition to this, ICC4 is measured on condition that addresses are changed only one
time during t CK(MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK(MIN.).
4. For LVTTL compatible, VG36648041.
Document : 1G5-0153
Rev.1
Page 5
VIS
Preliminary
A. C Characteristics : (Ta = 0 to 70°C V DD = 3.3V
VG36648041CT
CMOS Synchronous Dynamic RAM
± 0.3VSS = 0V)
Test Conditions for LVTTL Compatible :
AC input Levels (VIH/VIL)
2.0/0.8V
Input rise and fall time
1ns
Input timing reference level/
Output timing reference level
Output load condition
1.4V
50pF
AC Test Load Circuits (for LVTTL interface) :
VDDQ
VDDQ
VOUT
Z = 50
Ω
Device
Under
Test
Document : 1G5-0153
50PF
Rev.1
Page 6
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
A. C Characteristics : (Ta = 0 to 70°C V DD = 3.3V 0.3V, VSS = 0V)
VG36648041B
Parameter
CAS
Latency
symbol
-7
Min
CLK cycle time
CLK to valid output delay
Unit
-8
Max
Min
Max
3
tck3
7
8
ns
2
tck2
10
10
ns
3
tAc3
6
6
ns
2
tAc2
6
6
ns
CLK high pulse width
tCH
3
3
ns
CLK low pulse width
tCL
3
3
ns
CKE setup time
tCKS
2
2
ns
CKE hold time
tCKH
1
1
ns
Address setup time
tAS
2
2
ns
Address hold time
tAH
1
1
ns
Command setup time
tCMS
2
2
ns
Command hold time
tCMH
1
1
ns
Data input setup time
tDS
2
2
ns
Data input hold time
tDH
1
1
ns
Output data hold time
tOH
3
3
ns
CLK to output in low - Z
tLZ
0
0
ns
CLK to output in H - Z
3
tHZ
2
5
6
6
6
ns
Row active to active delay
tRRD
14
16
ns
RAS to CAS delay
tRCD
20
20
ns
Row precharge time
tRP
20
20
ns
ROW active time
tRAS
40
ROW cycle time
tRC
60
68
ns
Last data in to burst stop
tBDL
1
1
CLK
Data - in to ACT(REF) command
tDAL
1+ t RP
1+tRP
CLK
Data - in to precharge
tDPL
1
1
CLK
tT
1
Mode reg. set cycle
tRSC
2
2
CLK
Power down exit setup time
tPDE
2
2
ns
Self refresh exit time
tSRX
1
1
CLK
Refresh time
tREF
Transition time
Document : 1G5-0153
Rev.1
120K
10
64
48
1
120K
ns
10
ns
64
Page 7
ms
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Basic Features and Function Description
1.Simplified State Diagram
Self
Refresh
LF
SE
Mode
Register
Set
try
en
LF
SE
MRS
it
ex
AUTO
Refresh
REF
IDLE
E
CK
ACT
CK
E
Power
Down
CKE
ROW
ACTIVE
y
Au Write
to p
red with
har
ge
re
co
ve
r
e
rit
W
CKE
WRITE
Read (write recovery)
CKE
e re
READ
SUSPEND
Read with
Auto Precharge
)
cov
ery)
CKE
CKE
READA
SUSPEND
n)
(P r
ech
arg
e
READ A
PR
E
tio
ina
Precharge
CKE
CKE
ith e
te w arg
Wri Prech
uto
(writA
m
ter
POWER
ON
READ
ter
min
atio
n
WRITE A
CKE
R
Auto ead w
Pre ith
cha
rge
rge
cha
P re
E(
PR
CKE
Read
Write
Write with
Auto Precharge
WRITE A
SUSPEND
PRE
WRITE
SUSPEND
ad
Re
Write (Write recovery)
h
wit rge
ad cha
Re Pre
to
Au
W
rit
e
T
BS
BS
T
CKE
Active
Power
Down
Precharge
Automatic sequence
Manual input
Note: After the AUTO refresh operation, precharge operation is
performed automatically and enter the IDLE state
Document : 1G5-0153
Rev.1
Page 8
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
2.Truth Table
2.1 Command Truth Table
CKE
Symbol
n-1
n
CS
RAS
CAS
WE
BA
A10
A11
A9 - A0
Device deselect
DESL
H
X
H
X
X
X
X
X
X
No operation
NOP
H
X
L
H
H
H
X
X
X
Mode register set
MRS
H
X
L
L
L
L
L
L
V
Bank activate
ACT
H
X
L
L
H
H
V
V
V
READ
H
X
L
H
L
H
V
L
V
READA
H
X
L
H
L
H
V
H
V
WRIT
H
X
L
H
L
L
V
L
V
FUNCTION
Read
Read with auto precharge
Write
WRITA
H
X
L
H
L
L
V
H
V
Precharge select bank
Write with auto precharge
PRE
H
X
L
L
H
L
V
L
X
Precharge all banks
PALL
H
X
L
L
H
L
X
H
X
Burst stop
BST
H
X
L
H
H
L
X
X
X
CBR (Auto) refresh
REF
H
H
L
L
L
H
X
X
X
Self refresh
SELF
H
L
L
L
L
H
X
X
X
2.2 DQM Truth Table
CKE
DQM
Symbol
n-1
n-1
Data write/output enable
ENB
H
X
L
Data mask/output disable
MASK
H
X
H
FUNCTION
2.3 CKE Truth Table
CKE
Current State
Function
Symbol
n-1
n
CS
RAS
CAS
WE
Add ress
Activating
Clock suspend mode entry
H
L
X
X
X
X
X
Any
Clock suspend
L
L
X
X
X
X
X
Clock suspend
Clock suspend mode exit
L
H
X
X
X
X
X
Idle
CBR refresh command
REF
H
H
L
L
L
H
X
Idle
Self refresh entry
SELF
H
L
L
L
L
H
X
Self refresh
Self refresh exit
L
H
L
H
H
H
X
L
H
H
X
X
X
X
Idle
Power down entry
H
L
X
X
X
X
X
Power down
Power down exit
L
H
X
X
X
X
X
H : High level, L : Low level
X : High or Low level (Don’t care), V : Valid Data input
Document : 1G5-0153
Rev.1
Page 9
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
2.4 Operative Command Table Notes 1
HCurrent state CS
Idle
Row active
Read
Write
RAS CAS WE
Address
(1/3)
Command
Action
Notes
H
X
X
X
X
DESL
Nop or Power down
2
L
H
H
X
X
NOP or BST
Nop or Power down
2
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BR, RA
ACT
Row active
L
L
H
L
BA, A10
PRE/PALL
Nop
L
L
L
H
X
REF/SELF
Refresh or Self refresh
L
L
L
L
Op-Code
MPS
Mode register access
H
X
X
X
X
DESL
Nop
L
H
H
X
X
NOP or BST
Nop
L
H
L
H
BA, CA, A10
READ/READA
Begin read : Determine AP
5
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write : Determine AP
5
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Precharge
6
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
H
X
X
X
X
DESL
Continue burst to end
→ Row active
L
H
H
H
X
NOP
Continue burst to end
→ Row active
L
H
H
L
X
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Term burst, new read : Determine AP
7
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst, start write : Determine AP
7,8
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE/PALL
Term burst, precharging
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
H
X
X
X
X
DESL
Continue burst to end
→ write recovering
L
H
H
H
X
NOP
Continue burst to end
→ write recovering
L
H
H
L
X
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Term burst, start read : Determine AP
7,8
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst, new write : Determine AP
7
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Term burst, precharging
9
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Document : 1G5-0153
Rev.1
4
→ Row active
3
→ Row active
Page 10
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
(2/3)
Current state
Read with auto
precharge
Write with auto
precharge
Precharging
Row activating
CS RAS CA WE
Address
Command
Action
→
→
Notes
H
X
X
X
X
DESL
Continue burst to end
L
H
H
H
X
NOP
L
H
H
L
X
BST
Continue burst to end
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
11
L
L
H
H
BA, RA
ACT
ILLEGAL
3,11
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3,11
L
L
L
H
X
PEF/SELF
ILLEGAL
Precharging
Precharging
11
L
L
L
L
Op - Code
MRS
ILLEGAL
H
X
X
X
X
DESL
Continue burst to end → write
recovering with auto precharte
L
H
H
H
X
NOP
Continue burst to end → write
recovering with auto precharge
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA ILLEGAL
11
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
11
L
L
H
H
BA, RA
ACT
ILLEGAL
3,11
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3,11
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op - code
MRS
ILLEGAL
H
X
X
X
X
DESL
Nop
→
Enter idle after tRP
L
H
H
H
X
NOP
Nop
→
Enter idle after tRP
L
H
H
L
X
BST
Nop
→
Enter idle after tRP
L
H
L
H
BA, CA, A10
READ/READA ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Nop
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op - Code
MRS
ILLEGAL
H
X
X
X
X
DESL
Nop
L
H
H
H
X
NOP
Nop
L
H
H
L
X
BST
Nop
L
H
L
H
BA, CA, A10
READ/READA ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3,9
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op - Code
MRS
ILLEGAL
Document : 1G5-0153
Rev.1
→
→
→
→
Enter idle after tRP
Enter row active after tRCD
Enter row active after tRCD
Enter row active after tRCD
Page 11
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
(3/3)
Current
Write
recovering
Write
recovering
with auto
precharge
Auto
Refreshing
Mode register
setting
CS
RAS
CAS
WE
Address
Command
Action
Notes
H
X
X
X
X
DESL
Nop
L
H
H
H
X
NOP
Nop
→
→
L
H
H
L
X
BST
Nop
→
L
H
L
H
BA, CA, A10
READ/READA
Start read, Determine AP
Enter row active after tDPL
Enter row active after tDPL
Enter row active after tDPL
8
L
H
L
L
BA, CA, A10
WRIT/WRITA
New write, Determine AP
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
X
PEF/SELF
ILLEGAL
L
L
L
L
Op - Code
MRS
ILLEGAL
H
X
X
X
X
DESL
Nop
L
H
H
H
X
NOP
Nop
→
→
L
H
H
L
X
BST
Nop
→
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3,8,11
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3,11
L
L
H
H
BA, RA
ACT
ILLEGAL
3,11
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
X
REF/SELF
ILLEGAL
L
L
L
L
Op - Code
MRS
ILLEGAL
H
X
X
X
X
DESL
Nop Enter idle after tRC
L
H
H
X
X
NOP/BST
Nop Enter idle after tRC
L
H
L
X
X
READ/WRIT
ILLEGAL
L
L
H
X
X
ACT/PRE/PALL
ILLEGAL
L
L
L
X
X
REF/SELF/MRS ILLEGAL
H
X
X
X
X
DESL
Nop
L
H
H
H
X
NOP
Nop
L
H
H
L
X
BST
ILLEGAL
L
H
L
X
X
READ/WRITE
ILLEGAL
L
L
X
X
X
ACT/PRE/PALL/ ILLEGAL
REF/SELF/MRS
→
→
Enter precharge after tDPL
Enter precharge after tDPL
Enter precharge after tDPL
Enter idle after 2 Clocks
Enter idle after 2 Clocks
Note: 1. All entries assume that CKE was active (High level) during the preceding clock cycle.
2. If both banks are idle, and CKE is inactive (Low level), the device will enter Power downmode.
All input buffers except CKE will be disabled.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by BankAddress(BA),
depending on the state of that bank.
4. If both banks are idle, and CKE is inactive (Low level), the device will enter Self refresh mode.
All input buffers except CKE will be disabled.
5. Illegal if tRCD is not satisfied.
6. Illegal if tRAS is not satisfied.
7. Must satisfy burst interrupt condition.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Must mask preceding data which don’t satisfy t DPL.
10. Illegal if tRRD is not satisfied.
11. Illegal for single bank, but legal for other banks in multi-bank devices.
Document : 1G5-0153
Rev.1
Page 12
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
2.5 Command Truth Table for CKE Note 1
Current state
Self refresh
(S.R.)
Self refresh
recovery
Power down
(P.D.)
Both banks
idle
Any state
other than
listed above
CKE
n-1
CKE
n
CS
RAS
CAS
WE
H
L
L
L
L
L
H
X
H
H
H
H
L
H
X
H
L
L
L
X
H
H
H
H
H
H
H
H
H
L
L
H
L
Address
Action
Notes
X
X
H
H
L
X
X
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
INVALID, CLK (n - 1)would exit S.R.
S.R. Recovery
S.R. Recovery
ILLEGAL
ILLEGAL
Maintain S.R.
Idle after tRC
L
H
H
X
X
Idle after tRC
H
H
L
L
L
L
H
L
X
H
L
L
H
L
L
L
X
X
X
X
H
L
X
H
H
L
X
X
X
X
L
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
ILLEGAL
ILLEGAL
Begin clock suspend next cycle
Begin clock suspend next cycle
ILLEGAL
ILLEGAL
Exit clock suspend next cycle
Maintain clock suspend
INVALID, CLK (n - 1) would exit P.D.
L
H
L
H
X
H
X
X
X
X
X
X
H
H
L
H
X
X
H
H
L
L
H
X
H
H
H
H
L
L
L
L
L
L
H
L
H
L
H
X
X
X
H
L
L
H
X
X
H
L
L
L
H
X
H
H
L
L
L
L
L
L
L
L
H
L
L
H
X
H
X
X
X
X
X
X
X
X
X
X
H
L
L
L
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
EXIT P.D. → Idle
X
Maintain power down mode
Refer to operations in Operative
Command Table
Refer to operations in Operative
Command Table
Refer to operation in Operative
Command Table
X
Auto Refresh
Op - Code Refer to operations in Operative
Command Table
Refer to operations in Operative
Command Table
Refer to operations in Operative
Command Table
Refer to operations in Operative
Command Table
X
Self refresh
Op - Code Refer to operations in Operative
Command Table
X
Power down
Refer to operations in Operative
Command Table
Begin clock suspend next cycle
Exit clock suspend next cycle
Maintain clock suspend
Note: 1. H : Hight level, L : low level, X : High or low level (Don't care).
2. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum setup
time must be satisfied before any command other than EXIT.
3. Power down and Self refresh can be entered only from the both banks idle state.
4. Must be legal command as defined in Operative Command Table.
5. Illegal if tSREX is not satisfied.
Document : 1G5-0153
Rev.1
Page 13
2
2
5
5
2
2
3
3
4
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
5.Mode Register (Address Input for Mode Set)
13 12 11
0 0 0
10
0
9
0
8
0
1
13 12 11
x
x x
10
x
9
1
8
0
7
0
6
13 12
x x
10
x
9
0
8
0
7
0
6
11
x
7
6
5
3
4
2
Reserved
5
4
LTMODE
5
4
LTMODE
3
WT
2
3
WT
2
1
0
JEDEC Standard Test Set
1
BL
0
1
BL
0
Burst Read and Single Write (for Write Through Cache)
Burst Read and Burst Write
X = Don’t care
Bits2 - 0 WT = 0 WT = 1
1
000
1
Burst length
Wrap type
001
2
2
010
4
4
011
8
8
100
R
R
101
R
R
110
R
R
111
Full page
R
0
1
Sequential
Interleave
Bits6 - 4 CAS Iatency
R
000
001
Latency
mode
R
010
2
011
3
100
R
101
R
110
R
111
R
Remark R : Reserved
Document : 1G5-0153
Rev.1
Page 14
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
5.1 Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0, binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing Sequence (decimal)
0
0, 1
0, 1
1
1, 0
1, 0
(Burst of Four)
Starting Address
(column address A1 - A0, binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing Sequence (decimal)
00
0, 1, 2, 3
0, 1, 2, 3
01
1, 2, 3, 0
1, 0, 3, 2
10
2, 3, 0, 1
2, 3, 0, 1
11
3, 0, 1, 2
3, 2, 1, 0
(Burst of Eight)
Starting Address
(column address A2 - A0, binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing Sequence(decimal)
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1 ,2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6 ,7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7 ,0 ,1 ,2 ,3 ,4 ,5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 512
for 8M x 8 devices.
Document : 1G5-0153
Rev.1
Page 15
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
6.Address Bits of Bank-Select and Precharge
6.1 Quad banks controlled by A12 & A13 (for VG36648041/VG36648042)
Row
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13
A12
A13
0
0
Select Bank A
“Activate “ command
0
1
Select Bank B
“Activate” command
1
0
Select Bank C
“Activate” command
1
1
Select Bank D
“Activate” command
(Activate command)
Row
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13
(Precharge command)
A10
0
Result
A12 A13 Result
0
0
Precharge Bank A
0
0
1
Precharge Bank B
0
1
0
Precharge Bank C
0
1
1
Precharge Bank D
1
X
X
Precharge All Banks
X: Don't care
0
Disables Auto - Precharge (End of Burst)
1
Enables Auto - Precharge (End of Burst)
Co1. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13
(CAS strobes)
Document : 1G5-0153
Rev.1
A12
A13
Result
0
0
Enables Read/Write
commands for Bank A
0
1
Enables Read/Write
commands for Bank B
1
0
Enables Read/Write
commands for Bank C
1
1
Enables Read/Write
commands for Bank D
Page 16
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
7.Precharge
The precharge command can be asserted anytime after tRAS(min) is satisfied.
Soon after the precharge command is asserted, the precharge operation is performed and the synchronous DRAM
enters the idle state after tRP(min.) is satisfied. The parameter tRP is the time required to perform the precharge.
The earliest timing in a read cycle that a precharge command can be asserted without losing any data in the burst is
as follows.
PrechargeE
T0
T1
T3
T2
T4
Burst lengh=4
T7
T6
T5
CLK
Command
Read
PRE
CAS latency = 2
DQ
Q0
Command
Q1
Read
Q2
Hi - Z
Q3
PRE
CAS latency = 3
DQ
Q1
Q0
Q2
Q3
Hi - Z
CAS latency = 2 : One clock earlier than the last output data.
3 : Two clocks earlier than the last output data.
(tRAS is satisfied)
In order to write all data to the memory cell correctly, the asynchronous parameter ”t DPL” must be satisfied. The tDPL(min.) specification defines the earliest time that a precharge command can be asserted. The
minimum number of clocks can be calculated by dividing tDPL(min.) by the clock cycle time.
In summary, the precharge command can be asserted relative to the reference clock that indicates the
last data word is valid. In the following table, minus means clocks before the reference; plus means time
after the reference.
Document : 1G5-0153
CAS latency
Read
Write
2
-1
+ tDPL(min.)
3
-2
+ tDPL(min.)
Rev.1
Page 17
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
8.Auto Precharge
During a read or write command cycle, A10 controls whether auto precharge is selected. If A10 is high
in the read or write command (Read with Auto precharge command or Write with Auto precharge command), auto precharge is selected and begins automatically after the burst access.
In the write cycle, t DAL(min.) must be satisfied before asserting the next activate command to the bank
being precharged.
When using auto precharge in the read cycle, knowing when the precharge starts is important because
the next activate command to the bank being precharged cannot be executed until the precharge cycle
ends. Once auto precharge has started, an activate command to the bank can be asserted after tRP has
been satisfied.
A Read or Write command without auto - precharge can be terminated in the midst of a burst operation.
However, a Read or Write command with auto - precharge can not be interrupted by the same bank commands before the entire burst operation is completed. Therefore use of the same bank Read, Write, Precharge or Burst Stop command is prohibited during a read or write cycle with auto - precharge. It should be
noted that the device will not respond to the Auto - Precharge command if the device is programmed for full
page burst read or write cycles.
The timing when the auto precharge cycle begins depends both on both the CAS Iatency programmed
into the mode register and whether the cycle is read or write.
8.1 Read with Auto Precharge
During a READA cycle, the auto precharge begins one clock earlier (CL = 2) or two clocks earlier
(CL = 3) than the last word output.
READ with AUTO PRECHARGE
Burst lengh = 4
T0
T1
T4
T3
T2
T6
T5
T7
CLK
No New Command to Bank B
Command
Auto precharge starts
READA B
CAS latency = 2
DQ
QB0
QB1
QB2
Hi - Z
QB3
No New Command to Bank B
Auto precharge starts
Command
READA B
CAS latency = 3
DQ
QB0
QB1
QB2
QB3
Hi - Z
Remark READA means READ with AUTO PRECHARGE
Document : 1G5-0153
Rev.1
Page 18
T8
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
8.2 Write with Auto Precharge
During a write cycle, the auto precharge starts at the timing that is equal to the value of tDPL(min.)
after the last data word input to the device.
WRITE with AUTO PRECHRGE
Burst lengh = 4
T0
T1
T3
T2
T4
T5
T6
T7
CLK
No New Command to Bank B
Command
AUTO PRECHARGE starts
WRITA B
tDPL
CAS latency = 2
DQ
DB0
DB1
DB2
Hi - Z_
DB3
No New Command to Bank B
AUTO PRECHARGE starts
Command
WRITA B
tDPL
CAS latency = 3
DQ
DB0
DB2
DB1
Hi - Z
DB3
Remark WRITA means WRITE with AUTO Precharge
In summary, the auto precharge cycle begins relative to a reference clock that indicates the last data
word is valid.
In the table below, minus means clocks before the reference; plus means clocks after the reference.
Document : 1G5-0153
CAS latency
Read
Write
2
-1
+ tDPL(min.)
3
-2
+ tDPL(min.)
Rev.1
Page 19
T8
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
8.3 Multibank Operation- Read with Auto Precharge
During a READA cycle interrupted by a Read, Write command of another banks, the auto-precharge scheduled time would not be changed.
Multibank Operation
Burst lengh=8
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11 T12 T13 T14
CLK
Auto precharge bank A starts
Command
READA A
Read B
CAS latency=2
Hi-Z
DQ
QA0
QA1
QB0
QB1
QB2
QB3
QB4
QB5
QB6
QB7
Auto precharge bank A starts
Command
READA A
Read B
CAS latency=3
DQ
Hi-Z
QA0
QA1
QB0
QB1
QB2
QB3
QB4
QB5
QB6
QB7
Similiar top.21
Document : 1G5-0153
Rev.1
Page 20
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
8.4 Multibank Operation- Write with Auto Precharge
During a WRITEA cycle interrupted by a Read, Write command of another banks, the auto-precharge scheduled time would not be changed.
Multibank Operation
Burst lengh=8
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
Auto precharge bank A starts
Command
WRITA A
Read B
CAS latency=2
DQ
DB1
DB0
DA1
DA0
DB2
DB3
DB4
Hi-Z
DB5
Auto precharge bank A starts
Command
WRITA A
Read B
CAS latency=3
DQ
DB0
DA1
DA0
DB1
DB2
DB3
Hi-Z
DB4
Multibank Operation
Burst lengh=8
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CLK
Auto precharge bank A starts
Command
WRITA A
Write B
CAS latency=2
DQ
DA0
DA1
DB0
DB1
DB2
DB3
DB4
DB5
DB6
Hi-Z
DB7
Auto precharge bank A starts
Command
WRITA A
Write B
CAS latency=3
DQ
Document : 1G5-0153
DA0
DA1
DB0
DB1
DB2
Rev.1
DB3
DB4
DB5
DB6
Hi-Z
DB7
Page 21
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
9.Read/Write Command Interval
9.1 Read to Read command interval
During a read cycle when a new read command is asserted, it will be effective after the CAS latency,
even if the previous read operation has not completed. READ will be interrupted by another READ.
Each read command can be asserted in every clock without any restriction.
READ to READ Command Interval
Burst lengh=4, CAS latency=2
T0
T1
T3
T2
T4
T6
T5
T7
T8
CLK
Read B
Read A
Command
DQ
QA0
QB0
QB1
QB2
Hi-Z_
QB3
1 cycle
9.2 Write to Write Command Interval
During a write cycle, when a new Write command is asserted, the previous burst will terminated and the
new burst will begin with a new write command. WRITE will be interrupted by another WRITE.
Each write command can be asserted in every clock without any restriction.
WRITE to WRITE Command Interval
Burst lengh=4, CAS latency=2
T0
T1
T3
T2
T4
T5
T6
T7
CLK
Command
Write A
Write B
DQ
QA0
QB0
QB1
QB2
QB3
Hi-Z_
1 cycle
Document : 1G5-0153
Rev.1
Page 22
T8
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
9.3 Write to Read Command Interval
The write command to read command interval is also a minimum of 1 cycle. Only the write data before
the read command will be written. The data bus must be Hi-Z at least one cycle prior to the first DOUT.
WRITE to READ Command Interval
Burst lengh=4
T0
T1
T2
T3
T4
T6
T5
T8
T7
CLK
1 cycle
Command
WRITE A
Read B
CAS latency=2
Hi-Z
DA0
DQ
Command
Write A
QB0
QB1
QB2
QB3
QB1
QB2
Read B
CAS latency=3
DA0
DQ
Hi-Z
QB0
QB3
9.4 Read to Write Command Interval
During a read cycle, READ can be interrupted by WRITE.
DQM must be in High at least 3 clocks prior to the write command. There is a restriction to avoid a data
conflict. The data bus must be Hi-Z using DQM before Write.
Document : 1G5-0153
Rev.1
Page 23
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
READ to WRITE Command Interval
T0
T1
T3
T2
T4
T6
T5
T7
CAS latency=2
T8
CLK
Read
Command
Write
DQM
DQ
Hi-Z
D0
D1
D2
D3
1 cycle
T0
T1
T3
T2
T4
T6
T5
T7
Burst length=8, CAS latency=2
T8
T9
CLK
Command
Write
Read
DQM
Q0
DQ
Q2
Q1
D0
D2
D1
Hi-Z is
necessary
example: Burst length=4, CAS latency=3
T0
T1
T2
T3
T4
T6
T5
T8
T7
CLK
Command
Read
Write
DQM
DQ
Q2
Hi-Z is
D0
D1
D2
necessary
The minimum command interval = (4+1) cycles
Document : 1G5-0153
Rev.1
Page 24
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
10.BURST Termination
There are two methods to terminate a burst operation other than using a read or a write command.
One is the burst stop command and the other is the precharge command.
10.1 BURST Stop Command
During a read burst. when the burst stop command is asserted, the burst read data are terminated and the data bus goes to high-impedance after the CAS latency from the burst stop command.
During a write burst, when the burst stop command is asserted, any data provided at that cycle
will not be written. The burst write is effectively terminated and no further data can be written until a
new write command is asserted.
Burst Termination
T0
T1
T3
T2
T4
Burst lengh=X, CAS Intency=2,3
T7
T6
T5
CLK
BST
Read
Command
Q0
CAS latency=2
DQ
CAS latency=3
Q1
Q2
Q0
Q1
Hi-Z
Hi-Z
Q2
DQ
Remark BST: Burst stop command
T0
T1
T3
T2
T4
T5
Burst lengh=X, CAS latency=2,3
T7
T6
CLK
Command
BST
Write
CAS latency=2,3
Q0
Q0
Q1
Q2
Hi-Z_
DQ
Remark BST: Burst command
Document : 1G5-0153
Rev.1
Page 25
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
10.2 PRECHARGE TERMINATION
10.2.1 PRECHARGE TERMINATION in READ Cycle
During READ cycle, the burst read operation is terminated by a precharge command. When the
precharge command is asserted, the burst read operation is terminated and precharge starts.
The same bank can be activated again after tRP from the precharge command.
When CAS latency is 2,the read data will remain valid until one clock after the precharge command.
When CAS latency is 3, the read data will remain valid until two clocks after the precharge command.
Precharge Termination in READ Cycle
T0
T1
T3
T2
T4
T6
T5
T7
Burst lengh= X
T8
CLK
Command
PRE
Read
ACT
CAS latency=2
Q0
DQ
Q1
Q2
Hi-Z
Q3
tRP
command
Read
PRE
ACT
tRP
CAS latency=3
DQ
Document : 1G5-0153
Q0
Rev.1
Q1
Q2
Q3
Hi-Z
Page 26
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
10.2.2 Precharge Termination in WRITE Cycle
During WRITE cycle, the burst write operation is terminated by a precharge command. When the precharge command is asserted, the burst write operation is terminated and precharge starts.
The same bank can be activated again after t RP from the precharge command. The
DQM must be high to mask invalid data in.
During WRITE cycle, the write data written prior to the precharge command will be
correctly stored. However, invalid data may be written at the same clock as the precharge command. To prevent this from happening, DQM must be high at the same
clock as the precharge command. This will mask the invalid data.
PRECHARGE TERMINATION in WRITE Cycle
T0
T1
T3
T2
T4
T6
T5
T7
Burst lengh = X
T8
CLK
Command
Write
PRE
ACT
CAS latency = 2
DQM
DQ
D0
D1
D2
D3
Hi - Z
D4
tRP
command
Write
PRE
ACT
CAS latency = 3
DQM
DQ
D0
D1
D2
D3
D4
Hi - Z
tRP
Document : 1G5-0153
Rev.1
Page 27
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Timing Diagram
Document : 1G5-0153
Rev.1
Page 28
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Mode Register Set
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
CLK
CKE
t
RSC
CS
RAS
CAS
WE
BS
A10
Address Key
ADD
DQM
t
RP
DQ
Hi-Z
Precharge
Command
All Banks
Document : 1G5-0153
Mode Register
Set Command
Rev.1
Command
Page 29
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
AC Parameters for Write Timing (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5
T6 T7 T8
T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CH
CKE
t
CL
t
CK2
t
CMS
t
CKS
Begin Auto Precharge Begin Auto Precharge
Bank A
Bank B (Bank D)
t
CKH
t
CMH
CS
RAS
CAS
WE
BS
A10
tAS
tAH
ADD
DQM
tRCD
DQ
tDAL
t
RRD
tDS
tRC
t
DH
t
DPL
t
RP
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3
Activate
Write with Activate
Write with
Activate
Command Auto Precharge Command Auto Precharge Command
Bank A
Command Bank A
Command
Bank B
(Bank D)
Bank B
Bank A
(Bank D)
Document : 1G5-0153
Rev.1
Write without
Auto Precharge
Command
Bank A
Precharge
Command
Bank A
Activate
Command
Bank A
Activate
Command
Bank B
(Bank D)
Page 30
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
AC Parameters for Write Timing (2 of 2)
Burst Length=4, CAS Latency=3,4
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23
CLK
t
CL
t
CH
CKE
t
CK3
t
CMS
t
CKS
Begin Auto Precharge Begin Auto Precharge
Bank A
Bank B (Bank D)
t
CKH
t
CMH
CS
RAS
CAS
WE
BS
A10
tAS
tAH
ADD
DQM
tRCD
DQ
t
DAL
t
RRD
t
tDS
RC
t
DH
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3
Activate
Command
Bank A
Document : 1G5-0153
Write with Activate
Write with
Auto Precharge Command Auto Precharge
Command
Bank B
Command
Bank A
Bank B
(Bank D)
(Bank D)
Activate
Command
Bank A
Rev.1
t
DPL
t
RP
QAb0 QAb1 QAb2 QAb3
Write without
Auto Precharge
Command
Bank A
Precharge
Command
Bank A
Activate
Command
Bank A
Page 31
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
AC Parameters for Read Timing (1 of 2)
Burst Length=2, CAS Latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CLK
tCH tCL
tCK2
Begin Auto
Precharge
Bank B (Bank D)
tCMS
t
CMH
CKE
tCKS
t
CKH
CS
RAS
CAS
WE
BS
A10
tAS
tAH
ADD
tRRD
tRAS
tRC
DQM
t
AC2
tLZ
t
RCD
DQ
Hi-Z
QAa0
Activate
Command
Bank A
Document : 1G5-0153
tAC2
tOH
Read
Command
Bank A
Activate
Command
Bank B
(Bank D)
Rev.1
tHZ
tOH
QAa1
Read with
Auto Precharge
Command
Bank B
(Bank D)
tRP
tHZ
QBa0
Precharge
Command
Bank A
QBa1
Activate
Command
Bank A
Page 32
T13
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
AC Parameters for Read Timing (2 of 2)
Burst Length=2, CAS Latency=3
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11
T12
T13 T14
T15
CLK
t
CH tCL
CKE
tCKS
t
CK3
Begin Auto
Precharge
Bank B (Bank D)
t
CMS
t
CMH
t
CKH
CS
RAS
CAS
WE
BS
A10
t
AH
t
AS
ADD
t
RRD
t
RAS
t
RP
t
RC
DQM
tAC3
tLZ
t
RCD
DQ
tAC3
tOH
tHZ
tOH
Hi-Z
QAa0
Activate
Command
Bank A
Document : 1G5-0153
Read
Command
Bank A
Activate
Command
Bank B
(Bank D)
Rev.1
QAa1
t
QBa0
Read with
Precharge
Auto Precharge Command
Command
Bank A
Bank B (Bank D)
HZ
QBa1
Activate
Command
Bank A
Page 33
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Power on Sequence and Auto Refresh (CBR)
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
High level
is required
CKE
t
RSC
Minimum of 2 Refresh Cycles are required
CS
RAS
CAS
WE
BS
A10
Address Key
ADD
DQM
High Level is Necessary
t
DQ
t
RC
RP
Hi-Z
Precharge
Inputs Command
All Banks
must
be stable
for 100us
Document : 1G5-0153
1st Auto
Refresh
Command
2nd Auto
Refresh
Command
Rev.1
Mode Register
Set Command
Command
Page 34
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Clock Suspension During Burst Read (Using CKE) (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
DQM
t
DQ
HZ
Hi-Z
QAa0
Activate
Command
Bank A
Document : 1G5-0153
Read
Command
Bank A
QAa1
Clock
Suspended
1 Cycle
QAa2
Clock
Suspended
2 Cycles
Rev.1
QAa3
Clock
Suspended
3 Cycles
Page 35
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Clock Suspension During Burst Read (Using CKE) (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK3
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
DQM
t
HZ
DQ
Hi-Z
QAa0
Activate
Command
Bank A
Document : 1G5-0153
Read
Command
Bank A
QAa1
QAa2
Clock
Suspended
1 Cycles
Clock
Suspended
2 Cycles
Rev.1
QAa3
Clock
Suspended
3 Cycles
Page 36
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Clock Suspension During Burst Write (Using CKE) (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
DQM
DQ
Hi-Z
DAa0
Activate
Command
Bank A
Document : 1G5-0153
DAa1
Clock
Suspended
1 Cycle
Write
Command
Bank A
DAa2
Clock
Suspended
2 Cycles
DAa3
Clock
Suspended
3 Cycles
Rev.1
Page 37
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Clock Suspension During Burst Write (Using CKE) (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6
T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
DQM
DQ
Hi-Z
DAa0
Activate
Command
Bank A
Document : 1G5-0153
DAa1
Clock
Suspended
1 Cycle
Write
Command
Bank A
DAa2
Clock
Suspended
2 Cycles
DAa3
Clock
Suspended
3 Cycles
Rev.1
Page 38
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Power Down Mode and Clock Mask
Burst Length=4, CAS Latency=2
CLK can be Stopped*
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
t
t
t
CKS
CKH
CKS
CKE
VALID
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
DQM
t
DQ
HZ
Hi-Z
QAa0 QAa1
Activate
Command
Bank A
ACTIVE
STANDBY
Power Down
Mode Entry
Document : 1G5-0153
QAa2
Precharge
Command
Read
Command
Bank A
Power Down
Mode Exit
QAa3
Clock Mask
Start
Rev.1
Clock Mask
End
Power Down
Mode Entry
Precharge
Standby
Power
Down
Mode
Exit
Command
Page 39
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Auto Refresh (CBR)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
DQM
t
DQ
RP
t
RC
t
RC
Hi-Z
Q0
Precharge CBR Refresh
Command
Command
All Banks
Document : 1G5-0153
CBR Refresh
Command
Rev.1
Q1
Q2
Activate
Read
Command Command
Page 40
Q3
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Self Refresh (Entry and Exit)
CLK can be Stopped*
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
SRX
t
SRX
t
CKS
t
CKS
CKE
CS
RAS
CAS
WE
BS
A10
ADD
t
RC
DQM
DQ
t
RC
Hi-Z
All Banks
must be idle
Self refresh
Entry
Self Refresh
Exit
Self Refresh
Entry
Self Refresh
Exit
Activate
Command
* Clock can be stopped at CKE=Low. If clock is stopped, it must be restarted/stable for 4 clock cycles before CKE=High
Document : 1G5-0153
Rev.1
Page 41
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Random Column Read (Page Within same Bank)(1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
RAd
RAa
CAa
CAb
CAc
RAd
CAd
DQM
DQ
Hi-Z
QAa0 QAa1 QAa2 QAa3 QAb0 QAb1 QAc0 QAc1 QAc2 QAc3
Precharge
Command
Bank A
Document : 1G5-0153
Read
Command
Bank A
Read
Read
Command Command
Bank A
Bank A
Rev.1
QAd0 QAd1 QAd2 QAd3
Precharge Activate
Read
Command Command Command
Bank A
Bank A
Bank A
Page 42
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Random Column Read (Page Within same Bank)(2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK3
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
RAd
CAa
CAb
CAc
RAd
CAd
DQM
DQ
Hi-Z
QAa0 QAa1 QAa2 QAa3 QAb0 QAb1 QAc0 QAc1 QAc2 QAc3
Activate
Command
Bank A
Document : 1G5-0153
Read
Command
Bank A
Read
Read
Command Command
Bank A
Bank A
Rev.1
Precharge
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A
Page 43
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Random Column Write (Page Within same Bank) (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Rd
Cb
Ca
Cc
Rd
Cd
DQM
DQ
Hi-Z
Da0
Activate
Command
Bank B
(Bank D)
Document : 1G5-0153
Da1
Write
Command
Bank B
(Bank D)
Da2
Da3
Db0
Db1
Dc0
Dc1
Dc2
Write
Write
Command Command
Bank
B
Bank B
(Bank D) (Bank D)
Rev.1
Dc3
Dd0
Dd1
Dd2
Dd3
Precharge Activate
Write
Command Command Command
Bank B
Bank B
Bank B
(Bank D)
(Bank D) (Bank D)
Page 44
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Random Column Write (Page Within same Bank) (1 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK
CKE
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Rd
Cb
Ca
Cc
Rd
Cd
DQM
DQ
Hi-Z
Da0
Activate
Command
Bank B
(Bank D)
Document : 1G5-0153
Da1
Write
Command
Bank B
(Bank D)
Da2
Da3
Db0
Db1
Write
Command
Bank B
(Bank D)
Dc0
Dc1
Write
Command
Bank B
(Bank D)
Rev.1
Dc2
Dc3
Precharge
Command
Bank B
(Bank D)
Dd0
Activate
Command
Bank B
(Bank D)
Dd1
Write
Command
Bank B
(Bank D)
Page 45
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Random Row Read (Interleaving Banks)(1 of 2)
Burst Length=8, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
High
CS
RAS
CAS
WE
BS
A10
ADD
t
DQM
DQ
RCD
Hi-Z
Activate
Command
Bank B
(Bank D)
t
AC2
t
RP
QBb0 QBb1
QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7
Read
Command
Bank B
(Bank D)
Activate
Command
Bank A
Precharge Active
Command Command
Bank B
Bank B
(Bank D)
(Bank D)
Read
Command
Bank B
(Bank D)
Read
Command
Bank A
Document : 1G5-0153
Rev.1
Page 46
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Random Row Read (Interleaving Banks) (2 of 3)
Burs tLength=8, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK3
CKE
High
CS
RAS
CAS
WE
BS
A10
ADD
t
DQM
DQ
t
RCD
t
AC3
RP
Hi-Z
QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBb0
Activate
Command
Bank B
(Bank D)
Document : 1G5-0153
Read
Command
Bank B
(Bank D)
Activate
Command
Bank A
Read
Command
Bank A
Rev.1
Precharge
Command
Bank B
(Bank D)
Activate
Command
Bank B
(Bank D)
Read
Precharge
Command Command
Bank B
Bank A
(Bank D)
Page 47
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Random Row Write (Interleaving Banks) (1 of 2)
Burst Length=8, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
High
CS
RAS
CAS
WE
BS
A10
ADD
t
RCD
DQM
DQ
Hi-Z
Activate
Command
Bank A
t
DPL
t
RP
t
DPL
QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QAb0 QAb1 QAb2 QAb3 QAb4
Write
Command
Bank A
Document : 1G5-0153
Activate
Command
Bank B
(Bank D)
Precharge Active
Command Command
Bank A
Bank A
Write
Command
Bank B
(Bank D)
Rev.1
Write
Command
Bank A
Precharge
Command
Bank B
(Bank D)
Page 48
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Random Row Write (Interleaving Banks) (2 of 2)
Burst Length=8, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK
CKE
High
CS
RAS
CAS
WE
BS
A10
ADD
RBa
t
RCD
DQM
DQ
Hi-Z
Activate
Command
Bank A
Document : 1G5-0153
t
DPL
t
DPL
t
RP
QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBa0 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBb7 QAb0 QAb1 QAb2 QAb3
Write
Command
Bank A
Activate
Command
Bank B
(Bank D)
Write
Command
Bank B
(Bank D)
Rev.1
Precharge
Command
Bank A
Activate
Command
Bank A
Precharge
Write
Command Command
Bank B
Bank A
(Bank D)
Page 49
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Read and Write Cycle (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAb
CAa
CAc
DQM
DQ
Hi-Z
QAa0 QAa1 QAa2 QAa3
Activate
Command
Bank A
Document : 1G5-0153
Write
Command
Bank A
DAb0 DAb1
DAb3
The Write Data
Write
Command is Masked with a
Bank A
Zero Clock
latency
Rev.1
QAc0 QAc1
Read
Command
Bank A
QAc3
The Read Data
is Masked with
Two Clocks
Latency
Page 50
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Read and Write Cycle (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK3
CKE
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
CAb
CAc
DQM
DQ
Hi-Z
DAb0 DAb1
QAa0 QAa1 QAa2 QAa3
Activate
Command
Bank A
Read
Command
Bank A
DAb3
Write
The Write Data Read
Command is Masked with a Command
Bank A
Bank A
Zero Clock
Latency
Document : 1G5-0153
Rev.1
QAc0 QAc1
QAc3
The Read Data
is Masked with
a Two Clock
Latency
Page 51
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Interleaved Column Read Cycle (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Cb
t
DQM
DQ
Ra
RCD
Ra
Ca
Cb
Cc
Cb
Cd
t
AC2
Hi-Z
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBb0 QBb1 QBc0 QBc1 QAb0 QAb1 QBd0 QBd1 QBd2 QBd3
Activate
Command
Bank A
Read
Read
Read
Activate
Read
Read
Read
Command Command Command Command Command Command Command
Bank A
Bank A
Bank B
Bank B
Bank B
Bank B
Bank B
(Bank D)
(Bank D) (Bank D) (Bank D) (Bank D)
Precharge
Command
Bank B
(Bank D)
Precharge
Command
Bank A
Document : 1G5-0153
Rev.1
Page 52
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Interleaved Column Read Cycle (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK3
CKE
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Ra
Ca
Ca
Ra
Cb
Cc
Cb
DQM
t
RCD
t
RRD
DQ
t
AC3
Hi-Z
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBb0 QBb1 QBc0 QBc1 QAb0 QAb1 QAb2 QAb3
Activate
Command
Bank A
Read
Command
Bank A
Activate
Command
Bank B
(Bank D)
Document : 1G5-0153
Read
Read
Read
Read
Precharge Precharge
Command Command Command Command Command Command
Bank A
Bank B
Bank B Bank B
Bank B
Bank A
(Bank D) (Bank D) (Bank D)
(Bank D)
Rev.1
Page 53
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Interleaved Column Write Cycle (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Ra
Ca
Ca
Cb
Cc
Cb
t
RCD
DQM
t
DQ
Ra
Cb
t
RP
t
DPL
RRD
Hi-Z
DAa0 DAa1 DAa2 DAa3 DBa0 DBa1 DBb0 DBb1 DBc0 DBc1 DAb0 DAb1 DBd0 DBd1 DBd2 DBd3
Activate
Write
Write
Write
Write
Write
Activate
Command Command Command Command Command Command Command
Bank
B
Bank
B
Bank A
Bank
A
Bank
B
Bank B
Bank A
(Bank D) (Bank D) (Bank D)
(Bank D)
Document : 1G5-0153
Rev.1
Precharge
Command
Bank A
Write
Command
Bank B
(Bank D)
Precharge
Command
Bank B
(Bank D)
Page 54
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Interleaved Column Write Cycle (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK
CKE
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Ra
Ca
Ca
Cb
t
RCD
DQM
t
DQ
Ra
Cc
Cb
Cd
t
DPL
t
DPL
t
RP
RRD
Hi-Z
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBb0 QBb1 QBc0 QBc1 QAb0 QAb1 QBd0 QBd1 QBd2 QBd3
Activate
Command
Bank A
Write
Command
Bank A
Activate
Command
Bank B
(Bank D)
Document : 1G5-0153
Write
Write
Write
Write
Write
Command Command Command Command Command
Bank A
Bank B
Bank B Bank B
Bank B
(Bank D) (Bank D) (Bank D)
(Bank D)
Precharge
Command
Bank B
(Bank D)
Precharge
Command
Bank A
Rev.1
Page 55
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Auto Precharge after Read Burst (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CKE
CK2
High
Start Auto Precharge
Bank B (Bank D)
Start Auto Precharge
Bank A
Start Auto Precharge
Bank B (Bank D)
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Ra
Ca
Ra
Rb
Ca
Cb
Rb
Rc
Cb
Rc
Cc
DQM
DQ
Hi-Z
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QAc2
Activate
Read
Activate
Read with
Command Command Command Auto Precharge
Bank A
Bank A
Bank B Command
(Bank D) Bank B
(Bank D)
Document : 1G5-0153
Read with
Auto Precharge
Command
Bank A
Activate
Command
Read with
Bank A
Auto Precharge
Command
Read with
Activate
Bank B
Auto Precharge
Command (Bank D)
Command
Bank B
Bank A
(Bank D)
Rev.1
Page 56
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Auto Precharge after Write Burst (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CKE
CK3
High
Start Auto Precharge
Bank B (Bank D)
Start Auto
Precharge
Bank A
Start Auto Precharge
Bank B (Bank D)
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Ra
Ca
Ra
Rb
Ca
Cb
Rb
RBb
Cb
DQM
DQ
Hi-Z
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3
Activate
Command
Bank A
Activate
Command
Bank B
(Bank D)
Read with
Auto Precharge
Command
Bank B (Bank D)
Read with
Auto Precharge
Command
Bank A
Activate
Command
Bank B
(Bank D)
QBb0 QBb1 QBb2
Write with
Auto precharge
Command
Bank B (Bank D)
Read
Command
Bank A
Document : 1G5-0153
Rev.1
Page 57
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Auto Precharge after Write Burst (1 of 2)
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CKE
CK2
High
Start Auto Precharge
Bank B (Bank D)
Start Auto Precharge
Bank B (Bank D)
Start Auto Precharge
Bank A
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Ra
Ca
Ra
Rb
Ca
Cb
Rb
Rc
Cb
Rc
Cc
DQM
DQ
Hi-Z
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QAc2 QAc3
Activate
Write
Write with
Activate
Command Command Command Auto Precharge
Command
Bank A
Bank B
Bank A
Bank B
(Bank D)
(Bank D)
Document : 1G5-0153
Activate
Write with
Activate
Command
Auto Precharge Command
Bank A
Command
Bank B
Write with
Bank A
(Bank D)
Auto Precharge
Write with
Bank A
Auto Precharge
Command
Bank B
(Bank D)
Rev.1
Start Auto
Precharge
Bank A
Page 58
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Auto Precharge after Write Burst (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK
CKE
High
Start Auto
Precharge
Bank A
Start Auto Precharge
Bank B (Bank D)
Start Auto Precharge
Bank B (Bank D)
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Ra
Ca
Ra
Rb
Ca
Cb
Rb
RBb
Cb
DQM
DQ
Hi-Z
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3 QAb0 QAb1 QAb2 QAb3
Activate
Command
Bank A
Activate
Command
Bank B
(Bank D)
Read with
Auto Precharge
Command
Bank B (Bank D)
Read with
Auto Precharge
Command
Bank A
Activate
Command
Bank B
(Bank D)
QBb0 QBb1 QBb2 QBb3
Write with
Auto precharge
Command
Bank B (Bank D)
Read
Command
Bank A
Document : 1G5-0153
Rev.1
Page 59
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Full Page Read Cycle (1 of 2)
Burst Length=Full Page, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
High
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Rb
Ra
Ca
Ca
Ra
Rb
t
RP
DQM
DQ
Hi-Z
QAa
Activate
Command
Bank A
Read
Command
Bank A
Document : 1G5-0153
QAa+1 QAa+2 QAa-2 QAa-1
Activate
Command
Bank B
(Bank D)
QAa
QAa+1 QBa
Read
Command
Bank B
(Bank D)
QBa+1 QBa+2 QBa+3 QBa+4 QBa+51QBa+6
Full page burst operation does not
terminate when the burst length is
satisfied; the burst counter
increments and continues bursting
beginning with the starting address
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Rev.1
Precharge
Command
Bank B
(Bank D)
Burst Stop
Command
Activate
Command
Bank B
(Bank D)
Page 60
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Full Page Read Cycle (2 of 2)
Burst Length=Full Page, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK3
CKE
High
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Rb
Ra
Ca
Ca
Ra
Rb
DQM
DQ
Hi-Z
QAa
Activate
Command
Bank A
Document : 1G5-0153
Read
Command
Bank A
Activate
Command
Bank B
(Bank D)
QAa+1 QAa+2 QAa-2 QAa-1
QAa
QAa+1 QBa0
QBa+1 QBa+2 QBa+3 QBa+4 QBa+5
Full page burst operation
Read
does not teminate when
Command
the burst length is satisfied;
Bank B
the burst counter increments
(Bank D)
and continues bursting
The burst counter wraps beginning with the starting
from the highest order
address
page address back to zero
during this time interval
Rev.1
Precharge
Command
Bank B
(Bank D)
Burst Stop
Command
Activate
Command
Bank B
(Bank D)
Page 61
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Full Page Write Cycle (1 of 2)
Burst Length=Full Page, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
High
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Rb
Ra
Ca
Rb
Ca
Ra
DQM
t
DQ
BDL
Hi-Z
QAa
Activate
Command
Bank A
QAa+1 QAa+2 QAa+3 QAa-1
Write
Command
Bank A
Document : 1G5-0153
QAa
QAa+1
Activate
Command
Bank B
(Bank D)
The burst counter wraps
from the highest order
page address back to zero
during this time interval
QBa
QBa+1 QBa+2 QBa+3 QBa+4 QBa+5 QBa+6
Write
Command
Bank B
(Bank D)
Data is ignored
Full page burst operation
does not terminate when
the burst length is satisfied;
the burst counter increments
and continues bursting
beginning with the starting
address
Rev.1
Precharge
Command
Bank B
(Bank D)
Burst Stop
Command
Activate
Command
Bank B
(Bank D)
Page 62
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Full Page Write Cycle (2 of 2)
Burst Length=Full Page, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK
CKE
High
CS
RAS
CAS
WE
BS
A10
Ra
ADD
Ra
Rb
Ra
Ca
Rb
Ca
Ra
DQM
tBDL
DQ
Data is ignored.
Hi-Z
DAa
Activate
Command
Bank A
Document : 1G5-0153
DAa+1 DAa+2 DAa+3 DAa-1
Write
Command
Bank A
DAa
DAa+1
Activate
Command
Bank B
(Bank D)
The burst counter wraps
from the highest order
page address back to zero
during this time interval
DBa
DBa+1 DBa+2 DBa+3 DBa+4 DBa+5
Write
Command
Bank B
(Bank D)
Full page burst operation
does not terminate when
the burst length is satisfied;
the burst counter increments
and continues bursting
beginning with the starting
address
Rev.1
Precharge
Command
Bank B
(Bank D)
Burst Stop
Command
Activate
Command
Bank B
(Bank D)
Page 63
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Byte Write Operation
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
CLK
CKE
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK2
High
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
CAz
CAb
DQM
Hi-Z
DQ0~DQ7
Activate
Command
Bank A
Document : 1G5-0153
Read
Command
Bank A
Upper Byte
is masked
DQs are
masked
Write
Command
Bank A
Read
Write Upper
Command
is masked
Bank A
Rev.1
DQs are
masked
DQs are
masked
Page 64
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Burst Read and Single Write Operation
Burst Length=4, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
CLK
CKE
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK2
High
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
CAa
CAb
CAc
CAd
CAe
DQM
Hi-Z
DQ0~DQ7
Activate
Command
Bank A
Document : 1G5-0153
Read
Command
Bank A
Read
Single Write Single Write
Command
Command
Command
Bank A
Bank A
Bank A
Rev.1
DQs are
masked
Single Write
Command
Bank A
Page 65
DQs are
masked
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Full Page Random Column Read
Burst Length=Full Page, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
Ra
Ra
ADD
Ra
Ra
Rb
Ca
Ca
Cb
Cc
Cb
Cc
Rb
t
RP
DQM
DQ
Hi-Z
QAa0 QBa0
Activate
Command
Bank A
Document : 1G5-0153
QAb0
QAb1
Read
Read
Command
Command
Bank B
Bank B
(Bank D)
(Bank D)
Read
Read
Command
Command
Bank A
Bank A
Activate
Command
Bank B
(Bank D)
QBb0
QBb1
Read
Command
Bank A
QAc0
QAc1
QAc2
Read
Command
Bank B
(Bank D)
QBc0
QBc1
QBc2
Precharge
Command Bank B (Bank D)
(Precharge Termination)
Activate
Command
Bank B
(Bank D)
Rev.1
Page 66
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Full Page Random Column Write
Burst Length=Full Page, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
CS
RAS
CAS
WE
BS
A10
Ra
Ra
ADD
Ra
Ra
Rb
Ca
Ca
Cb
Cc
Cb
Cc
Rb
t
RP
DQM
DQ
Hi-Z
QAa0
Activate
Command
Bank A
Document : 1G5-0153
QBa0
QAb0
QAb1
QBb0
QBb1
Write
Write
Command
Command
Bank B
Bank B
(Bank D)
(Bank D)
Write
Write
Command
Command
Bank A
Bank A
Activate
Command
Bank B
(Bank D)
QAc0
QAc1
Write
Command
Bank A
QAc2
QBc0
QBc1
Write
Command
Bank B
(Bank D)
QBc2
Precharge
Command Bank B (Bank D)
(Precharge Termination)
Write Data
is masked
Rev.1
Activate
Command
Bank B
(Bank D)
Page 67
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Precharge Termination of a Burst (1 of 2)
Burst Length=4,8 or Full Page, CAS Latency=2
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK2
CKE
High
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
RAb
CAa
RAb
t
DPL
t
RAc
CAb
RAc
t
RP
CAc
t
RP
RP
DQM
DQ
Hi-Z
QAa0
Activate
Command
Bank A
QAa1
Write
Command
Bank A
QAa2
QAb0
Da3
Precharge
Command
Bank A
Activate
Command
Bank A
Read
Command
Bank A
Precharge Termination
of a Write Burst. Write
data is masked.
Document : 1G5-0153
QAb1
QAb2
Precharge
Command
Bank A
Activate
Command
Bank A
QAc0
Read
Command
Bank A
QAc1
QAc2
Precharge
Command
Bank A
Precharge Termination
of a Read Burst.
Rev.1
Page 68
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Precharge Termination of a Burst (2 of 3)
Burst Length=4,8 or Full Page, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7
T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t
CK3
CKE
High
CS
RAS
CAS
WE
BS
A10
RAa
ADD
RAa
RAb
CAa
RAb
t DPL
t
DQM
DQ
t
RAc
CAb
t
RP
RAc
t
RAS
RP
RCD
Hi-Z
DAa0
Activate
Command
Bank A
Write
Command
Bank A
Precharge
Command
Bank A
Write Data
is masked
Document : 1G5-0153
QAb0
DAa1
Activate
Command
Bank A
Read
Command
Bank A
QAb1
QAb2
Activate
Command
Bank A
QAb3
Activate
Command
Bank A
Precharge Termination
of a Read Burst.
Precharge Termination
of a Write Burst.
Rev.1
Page 69
VIS
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Ordering information
Part Number
Cycle time
Package
VG36648041BT-7
7ns
400mil
VG36648041BT-8
8ns
54-Pin
VG36648041BT-10
10ns
Plastic TSOP
VG36648041BT-8
• VG
• VIS Memory Product
• 36
• Technology/Design Rule
• 64
• 64Mb
• 80
• Device Configuration, 80: x8
•4
• Device Infernal Banks
•1
• Interface Type, 1: LVTTL
•B
• Mask/Design Version
•T
• Package Type, T: TSOP
•8
• Cycle time, 10: 10ns, 8: 8ns, 7: 7ns
Packaging Information
• 400mil, 54-Pin Plastic TSOP
DIM
A
MILLIMETERS
MIN.
---
NOM.
RAD R1
INCHES
MAX.
MIN.
---
1.20
---
NOM.
MAX.
---
0.047
A1
0.05
---
0.15
0.002
---
0.006
A2
0.95
1.00
1.05
0.037
0.039
0.041
b
0.30
---
0.45
0.012
---
0.018
0.40
0.012
b1
0.30
---
---
0.016
c
0.12
---
0.21
0.005
---
0.008
---
0.16
0.005
---
0.006
22.22
22.35
0.870
0.875
0.880
c1
0.12
D
22.09
ZD
0.71 REF.
e
54
RAD R
28
A2
B
L
A1
E1
0¢X ~8¢X
DETAIL A
0.028 REF.
0.80 BASIC
c
B
b
0.0315 BASIC
SECTION B-B
b1
E
11.56
11.76
11.96
0.455
0.463
0.471
E1
10.03
10.16
10.29
0.395
0.400
0.405
L
0.40
0.50
0.60
0.016
0.020
0.024
R
0.12
---
0.25
0.005
---
0.010
R1
0.12
---
---
0.005
---
---
1
27
D
c1
c
BASE METAL
WITH PLATING
DETAIL A
NOTE:
1. CONTROLLING DIMENSION : MILLIMETERS
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
Document : 1G5-0153
ZD
A
e
b
E
SEATING PLANE
0.100(0.004")
Rev.1
Page 70