SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF721 ISSUE 4 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:BF720 PARTMARKING DETAILS:BF721 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO -300 V V CEO -300 Emitter-Base Voltage V V EBO -5 V Peak Pulse Current I CM -100 mA Continuous Collector Current IC -50 mA Power Dissipation at T amb =25°C P tot Operating and Storage Temperature Range T j :T stg -2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base BF721 Breakdown Voltage V (BR)CBO -300 TYP. MAX. V I C=-10 µ A, I E=0 Collector-Emitter BF721 Breakdown Voltage V (BR)CEO -300 V I C=-1mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-100 µ A, I C=0 Collector Cut-Off Current I CBO -10 nA V CB=-200V, I E=0 Collector Cut-Off Current I CER -50 -10 nA µA VCE=-200V, RBE=2.7KΩ VCE=-200V, RBE=2.7KΩ † † Emitter Cut-Off Current I EBO -10 µA V EB=-5V, I C=0 Collector-Emitter Saturation Voltage V CE(sat) -0.6 V I C=-30mA, I B=-5mA* Base Emitter Saturation Voltage V BE(sat) -0.9 V I C=-20mA, I B=-2mA* Static Forward Current Transfer Ratio h FE Transition Frequency fT 100 MHz I C=-10mA, V CE=-10V f=100MHz Output Capacitance C obo 0.8 pF V CB=-30V, f=1MHz -50 I C=-25mA, V CE=-20V* †Tamb=150°C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA92 datasheet. TBA