SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE PARTMARKING DETAIL BSP43 – C BSP33 E – BSP43 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 90 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Base Current IB 100 mA Power Dissipation at T amb =25°C P TOT 2 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 90 V I C=100 µ A V (BR)CEO 80 V I C=10mA Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E=10 µ A Collector Cut-Off Current I CBO 100 50 nA µA V CB=60V V CB=60V, T amb =125°C Collector-Emitter Saturation Voltage V CE(sat) 0.25 0.5 V V I C =150mA, I B =15mA I C =500mA, I B =50mA Base-Emitter Saturation Voltage V BE(sat) 1.0 1.2 V V I C =150mA, I B =15mA I C =500mA, I B =50mA Static Forward Current Transfer Ratio h FE 30 100 50 MAX. * I C =100 µ A, V CE =5V I C =100mA, V CE =5V I C =500mA, V CE =5V 300 Output Capacitance C obo 12 pF V CB =10V, f=1MHz Input Capacitance C ibo 90 pF V EB =0.5V, f=1MHz Transition Frequency fT MHz I C=50mA, V CE=10V f =35MHz V CC =20V, I C =100mA I B1 =I B2 =5mA 100 Turn-On Time T on 250 ns Turn-Off Time T off 1000 ns *Measured under pulsed conditions. For typical characteristics graphs see FMMT493 datasheet. TBA