SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - C BC868 (NPN) PARTMARKING DETAILS - E C BC869 - CEC BC869-16 - CHC BC869-25 - CJC B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb =25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -25 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -20 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA Collector Cut-Off Current ICBO -10 -1 µA mA VCB = -25V VCB = -25V,Tamb =150oC Emitter Cut-Off Current IEBO -10 µA VEB=-5V Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-1A,IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-1A, VCE=-1V* Static Forward Current Transfer Ratio hFE BC869-16 BC869-25 50 85 60 100 160 IC=-5mA, VCE=-10V* IC=-500mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-500mA, VCE=-1V* IC=-500mA, VCE=-1V* 375 250 375 Transition Frequency fT 60 MHz IC=-10mA, VCE=-5V f = 35MHz Output Capacitance Cobo 45 pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT549 datasheet 3 - 12