SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST15 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST40 PARTMARKING DETAIL – BT1 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage V CEO -200 V Emitter-Base Voltage V EBO -4 V Peak Pulse Current I CM -1 A -500 mA Continuous Collector Current IC Power Dissipation at T amb =25°C P tot Operating and Storage Temperature Range T j:T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO -200 TYP. V I C=-100µA Collector-Emitter Breakdown Voltage V (BR)CEO -200 V I C=-1mA Emitter-Base Breakdown Voltage V (BR)EBO -4 V I E=-100µA Collector Cut-Off Current I CBO -1 µA V CB=-175V Collector Cut-Off Current I CEO -50 µA V CB=-150V Emitter Cut-Off Current I EBO -20 µA V EB=-4V Collector-Emitter Saturation Voltage - 2.0 -0.5 V V I C=-50mA, I B=-5mA* I C=-30mA, I B=-3mA* V CE(sat) Static Forward Current h FE Transfer Ratio 30 Transition Frequency fT 15 Output Capacitance C obo MAX. 150 15 I C=-50mA, V CE=-10V* MHz I C=-10mA, V CE=-10V* f = 30MHz pF V CB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 75