ZETEX FLLD261

SOT23 SILICON PLANAR LOW LEAKAGE
SERIES DIODE PAIR
FLLD261
ISSUE 2 – SEPTEMBER 1995 ✪
DIODE PIN CONNECTION
2
1
3
3
2
1
SOT23
PART MARKING DETAIL – P8A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Repetitive Peak Reverse Voltage
VRRM
VALUE
100
UNIT
V
Average Rectified Forward Current
IF(AV)
250
mA
Non-Repetitive Peak Forward Current (t=1µ s) IFSM
3.0
A
Power Dissipation at Tamb = 25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Reverse Current
MIN.
MAX.
UNIT CONDITIONS.
IR
5
5
µA
nA
VRRM=100V
VRRM=100V, Tamb=150°C
Reverse Recovery Time*
trr
400
ns
IF= IR=50 – 400mA
Forward Recovery Time
tfr
10
ns
IF=10mA
Diode Capacitance
Cd
4
pF
VR=1V, f=1MHz
Forward Overshoot Voltage Vfr
Typ
0.9
V
IF=10mA,
Rise time=5ns ± 20%
Forward Voltage
1.4
V
IF=-200mA
VF
*Time for IR to recover to 10% of IR peak
For typical characteristics graphs see FLLD263 datasheet.
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FLLD258
FLLD261
FLLD263
SOT23 SILICON PLANAR LOW LEAKAGE
COMMON ANODE DIODE PAIR
ISSUE 2 – JANUARY 1996
FLLD263
✪
DIODE PIN CONNECTION
1
2
1
TYPICAL CHARACTERISTICS
25
3
20
2
15
SOT23
PART MARKING DETAIL – D63
10
5
0
3
ABSOLUTE MAXIMUM RATINGS.
0
20
40
60
80
VF - Forward Voltage (V)
IR v VF
100
PARAMETER
SYMBOL
VALUE
UNIT
Repetitive Peak Reverse Voltage
VRRM
100
V
Average Rectified Forward Current
IF(AV)
250
mA
Non-Repetitive Peak Forward Current (t=1µ s) IFSM
3.0
A
Power Dissipation at Tamb = 25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Reverse Current
MIN.
MAX.
UNIT CONDITIONS.
IR
5
5
µA
nA
VRRM=100V
VRRM=100V, Tamb=150°C
Reverse Recovery Time*
trr
400
ns
IF= IR=50 – 400mA
Forward Recovery Time
tfr
10
ns
IF=10mA
Diode Capacitance
Cd
4
pF
VR=1V, f=1MHz
Forward Overshoot Voltage Vfr
Typ
0.9
V
IF=10mA,
Rise time=5ns ± 20%
Forward Voltage
1.4
V
IF=-200mA
VF
*Time for IR to recover to 10% of IR peak
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