SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD914 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION 1 PARTMARKING DETAIL 5D 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Working Peak Reverse Voltage VRWM 75 V Average Rectified Forward Current at Tamb=25°C IF(AV) 75 mA Repetitive Peak Forward Current IFRM 225 mA 330 mW -55 to +150 °C Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. 75 Reverse Breakdown Voltage VBR V IR=100µ A Forward Voltage VF 1 V IF=10mA Static Reverse Current IR 25 50 µA nA VR=20V VR=20V, Tamb=150 °C Reverse Recovery Time trr 8 ns IF= IRM=10mA,IRR =1mA RL=100Ω 4 ns IF=10mA,IRR =1mA, VR=6V RL=100Ω Total Capacitance CT 4 pF VR=0, f=1MHz Forward Recovery Voltage VFM(REC) 2.5 V IF=50mA, RL=50Ω Rectification Efficiency ηr % VR=2V,RL=5kΩ , CL=20pF Zsource=50Ω , f=100MHz 45 Spice parameter data is available upon request for this device PAGE NUMBER UNIT CONDITIONS. PAGE NUMBER