SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD6050 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION 1 PARTMARKING DETAIL 5A 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Breakdown Voltage Voltage (IR=100µ A) V(BR) 70 V Peak Forward Current IF 200 mA Peak Forward Surge Current I FM 500 mA Power Dissipation at Tamb = 25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Breakdown Voltage V (BR) 70 Forward Voltage VF 0.5 0.8 Reverse Current MAX. V IR=10µ A 0.7 1.1 V V IF=1mA IF=100mA IR 0.1 µA VR=50V Recovery Time* trr 5 ns IF= IR=10mA, IR(REC) =1 mA Diode Capacitance Cd 2.5 pF VR=0, f=1MHz *For switching test circuit diagram see FMMD7000 datasheet PAGE NUMBER UNIT CONDITIONS. PAGE NUMBER