SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA42 ✪ ISSUE 4 – MARCH 2001 PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO 300 V V CEO 300 V Emitter-Base Voltage V EBO 5 V Continuous Collector Current IC 200 mA Power Dissipation at T amb =25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO 300 Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO Collector Cut-Off Current I CBO Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage V CE(sat) Base-Emitter Saturation Voltage V BE(sat) Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C obo MAX. MIN. MAX. UNIT CONDITIONS. 200 V I C=100 µ A, I E=0 300 200 V I C=1mA, I B=0* 6 6 V I E=100 µ A, I C=0 0.1 µA µA V CB=200V, I E=0 V CB=160V, I E=0 0.1 µA µA V EB=6V, I C=0 V EB=4V, I C=0 0.5 0.4 V I C=20mA, I B=2mA* 0.9 0.9 V I C=20mA, I B=2mA* 0.1 0.1 25 40 40 25 40 50 50 50 6 I C=1mA, V CE=10V* I C=10mA, V CE=10V* I C=30mA, V CE=10V* 200 8 MHz I C=10mA, V CE=20V f=20MHz pF V CB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% TBA