SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTOR FMMTA64 ✪ ISSUE 3 – MARCH 2001 PARTMARKING DETAIL – FMMTA64 - Z2V E C COMPLEMENTARY TYPES – FMMTA64 - FMMTA14 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO -30 V V CEO -30 V Emitter-Base Voltage V EBO -10 V Peak Pulse Current I CM -800 mA Continuous Collector Current IC -500 mA Peak Base Current I BM -200 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage FMMTA64 UNIT CONDITIONS. -30 V I C=-10 µ A, I E=0 V (BR)CEO -30 V I C=-10mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO -10 V I E=-10 µ A, I C=0 Collector Cut-Off Current I CBO -0.1 µA V CB=-30V, I E=0 Emitter Cut-Off Current I EBO -0.1 µA V CE=-10V Static Forward Current Transfer Ratio h FE Collector-Emitter Saturation Voltage V CE(sat) -1.5 V I C=-100mA, I B=-0.1mA* Base-Emitter Saturation Voltage V BE(sat) -2.0 V I C =-100mA, I B=-0.1mA* Transition Frequency fT MHz I C=-50mA, V CE=-5V f=20MHz MIN. MAX. 10K 20K 125 I C=-10mA, V CE=5V* I C=-100mA, V CE=5V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FZTA64 datasheet. TBA