SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ✪ ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – FCX589 P89 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -50 Collector-Emitter Voltage V CEO -30 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current IC -1 A -200 mA Base Current IB Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j :T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V (BR)CBO -50 MAX. V I C=-100µA V (BR)CEO -30 V I C=-10mA* V (BR)EBO -5 V I E=-100µA Collector Cut-Off Current I CBO -100 nA V CB=-30V Collector -Emitter Cut-Off Current I CES -100 nA V CES =-30V Emitter Cut-Off Current I EBO -100 nA V EB=-4V Collector-Emitter Saturation Voltage V CE(sat) -0.35 -0.65 V I C=-1A, I B=-100mA* I C=-2A, I B=-200mA* Base-Emitter Saturation Voltage V BE(sat) -1.2 V I C=-1A, I B=-100mA* Base-Emitter Turn-on Voltage V BE(on) -1.1 V I C =-1A, V CE=-2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C obo 100 100 80 40 I C=-1mA, V CE=-2V* I C=-500mA, V CE=-2V* I C=-1A, V CE=-2V* I C=-2A, V CE=-2V* 300 100 15 MHz I C=-100mA, V CE=-5V f=100MHz pF V CB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT549 datasheet 3 - 91