N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LP ISSUE 1 – FEB 94 FEATURES * 60 Volt VDS * RDS(on)=5Ω D G REFER TO ZVN3306A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 60 UNIT V Continuous Drain Current at T amb = 25°C ID 270 mA A Pulsed Drain Current I DM 3 Gate Source Voltage V GS ± 20 V Power Dissipation at T amb = 25°C P tot 625 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Breakdown Voltage V GS(th) 0.8 Gate Body Leakage TYP. MAX. UNIT CONDITIONS. V I D=100µA, V GS=0V 2.5 V ID=1mA, V DS= V GS I GSS 100 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current (1) I DSS 10 µA V DS=60 V, V GS=0V On State Drain Current(1) I D(on) mA V DS=15 V, V GS=10V Static Drain Source On State Resistance (1) R DS(on) Ω Ω V GS=10V,I D=500mA V GS=5V, I D=200mA Forward Transconductance (1)(2) g fs mS V DS=15V,I D=500mA 750 5.0 7.5 100 Input Capacitance (2) C iss 60 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 5 pF Turn-On Time (2)(3) t (on) 10 ns Turn-Off Time (2)(3) t (off) 10 ns 3-90 V DS=25 V, V GS=0V f=1MHz V DD ≈15V, I D=600mA