ZVN3320F FEATURES * 200 Volt VDS * RDS(on)= 25Ω S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb =25°C ID 60 mA Pulsed Drain Current I DM 1 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 200 Gate-Source Threshold Voltage V GS(th) 1.0 MAX. UNIT CONDITIONS. 3.0 V I D =1mA, V GS =0V V I D =1mA, V DS = V GS Gate-Body Leakage I GSS 100 nA V GS =± 20V, V DS =0V Zero Gate Voltage Drain Current I DSS 10 50 µA µA V DS =200V, V GS =0V V DS =160V, V GS =0V, T=125°C (2) mA V DS =25V, V GS =10V 25 Ω V GS =10V,I D =100mA mS V DS =25V,I D =100mA On-State Drain Current I D(on) Static Drain-Source On-State Resistance R DS(on) Forward Transconductance g fs Input Capacitance C iss 45 pF Common Source Output Capacitance C oss 18 pF Reverse Transfer Capacitance C rss 5 pF Turn-On Delay Time t d(on) 5 ns Rise Time tr 7 ns Turn-Off Delay Time t d(off) 6 ns Fall Time tf 6 ns http://www.twtysemi.com 250 75 [email protected] V DS =25V, V GS =0V, f=1MHz V DD ≈25V, I D =100mA 4008-318-123 1 of 1