TYSEMI ZVN3320FTA

ZVN3320F
FEATURES
* 200 Volt VDS
* RDS(on)= 25Ω
S
D
G
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V DS
200
V
Continuous Drain Current at T amb =25°C
ID
60
mA
Pulsed Drain Current
I DM
1
A
Gate-Source Voltage
V GS
± 20
V
Power Dissipation at T amb =25°C
P tot
330
mW
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Drain-Source
Breakdown Voltage
BV DSS
200
Gate-Source Threshold
Voltage
V GS(th)
1.0
MAX. UNIT CONDITIONS.
3.0
V
I D =1mA, V GS =0V
V
I D =1mA, V DS = V GS
Gate-Body Leakage
I GSS
100
nA
V GS =± 20V, V DS =0V
Zero Gate Voltage
Drain Current
I DSS
10
50
µA
µA
V DS =200V, V GS =0V
V DS =160V, V GS =0V,
T=125°C (2)
mA
V DS =25V, V GS =10V
25
Ω
V GS =10V,I D =100mA
mS
V DS =25V,I D =100mA
On-State Drain Current
I D(on)
Static Drain-Source On-State
Resistance
R DS(on)
Forward Transconductance
g fs
Input Capacitance
C iss
45
pF
Common Source
Output Capacitance
C oss
18
pF
Reverse Transfer Capacitance
C rss
5
pF
Turn-On Delay Time
t d(on)
5
ns
Rise Time
tr
7
ns
Turn-Off Delay Time
t d(off)
6
ns
Fall Time
tf
6
ns
http://www.twtysemi.com
250
75
[email protected]
V DS =25V, V GS =0V, f=1MHz
V DD ≈25V, I D =100mA
4008-318-123
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