N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2110C ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4Ω G D S E-Line TO92 Compatible REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE 100 UNIT V Continuous Drain Current at Tamb=25°C ID 320 mA Pulsed Drain Current IDM 6 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 100 Gate-Source Threshold Voltage VGS(th) 0.8 MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 2.4 V ID=1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 1 100 µA µA VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) A VDS=25V, VGS=10V 4 Ω VGS=10V,ID=1A mS VDS=25V,ID=1A On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) Forward Transconductance (1)(2) gfs 1.5 250 Input Capacitance (2) Ciss 75 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 13 ns Fall Time (2)(3) tf 13 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-367 VDS=25 V, VGS=0V, f=1MHz VDD ≈ 25V, ID=1A ( 3 )