ZETEX ZXMC3A16DN8

ZXMC3A16DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A
P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
SO8
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
Q1 = N-CHANNEL
Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMC3A16DN8TA
7’‘
12mm
500 units
ZXMC3A16DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMC
3A16
Top view
PROVISIONAL ISSUE F - JULY 2004
1
ZXMC3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
30
-30
V
Gate-Source Voltage
V GS
⫾20
⫾20
V
Continuous Drain Current@V GS =10V; T A =25⬚C (b)(d)
@V GS =10V; T A =70⬚C (b)(d)
@V GS =10V; T A =25⬚C (a)(d)
ID
6.4
5.1
4.9
-5.4
-4.3
-4.1
A
A
A
Pulsed Drain Current (c)
I DM
30
-25
A
Continuous Source Current (Body Diode)
(b)
N-Channel P-Channel
UNIT
IS
3.4
-3.2
A
Pulsed Source Current (Body Diode) (c)
I SM
30
-25
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.8
14
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)(d)
R θJA
100
°C/W
Junction to Ambient
(b)(e)
R θJA
70
°C/W
Junction to Ambient
(b)(d)
R θJA
60
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PROVISIONAL ISSUE F - JULY 2004
2
ZXMC3A16DN8
CHARACTERISTICS
PROVISIONAL ISSUE F - JULY 2004
3
ZXMC3A16DN8
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
TYP.
MAX.
UNIT
CONDITIONS
STATIC
DYNAMIC
V
I D =250µA, V GS =0V
0.5
µA
V DS =30V, V GS =0V
100
nA
V GS =±20V, V DS =0V
V
I =250µA, V DS = V GS
D
⍀
⍀
V GS =10V, I D =9A
V GS =4.5V, I D =7.4A
13.5
S
V DS =15V,I D =9A
1
0.035
0.050
(3)
Input Capacitance
C iss
796
pF
Output Capacitance
C oss
137
pF
Reverse Transfer Capacitance
C rss
84
pF
Turn-On Delay Time
t d(on)
3.0
ns
Rise Time
tr
6.4
ns
Turn-Off Delay Time
t d(off)
21.6
ns
Fall Time
tf
9.4
ns
Gate Charge
Qg
9.2
nC
Total Gate Charge
Qg
17.5
nC
Gate-Source Charge
Q gs
2.3
nC
Gate-Drain Charge
Q gd
3.1
nC
V SD
0.85
t rr
Q rr
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
V DD =15V, I D =3.5A
R G =6.0Ω, V GS =10V
V DS =15V,V GS =5V,
I D =3.5A
V DS =15V,V GS =10V,
I D =3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
0.95
V
T J =25°C, I S =5.1A,
V GS =0V
17.8
ns
T J =25°C, I F =3.5A,
di/dt= 100A/µs
11.6
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE F - JULY 2004
4
ZXMC3A16DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
Input Capacitance
TYP.
MAX.
UNIT
CONDITIONS
STATIC
V
I D =-250µA, V GS =0V
-1.0
␮A
V DS =-30V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
I =-250␮A, V DS = V GS
D
⍀
⍀
V GS =-10V, I D =-4.2A
V GS =-4.5V, I D =-3.4A
9.2
S
V DS =-15V,I D =-4.2A
C iss
970
pF
Output Capacitance
C oss
166
pF
Reverse Transfer Capacitance
C rss
116
pF
Turn-On Delay Time
t d(on)
3.8
ns
Rise Time
tr
6.1
ns
Turn-Off Delay Time
t d(off)
35
ns
Fall Time
tf
19
ns
Gate Charge
Qg
12.9
nC
Total Gate Charge
Qg
24.9
nC
Gate-Source Charge
Q gs
2.67
nC
Gate-Drain Charge
Q gd
3.86
nC
V SD
-0.85
t rr
Q rr
1.0
0.048
0.070
DYNAMIC (3)
SWITCHING
V DS =-15 V, V GS =0V,
f=1MHz
(2) (3)
V DD =-15V, I D =-1A
R G =6.0Ω, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-4.2A
V DS =-15V,V GS =-10V,
I D =-4.2A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE F - JULY 2004
5
-0.95
V
T J =25°C, I S =-3.6A,
V GS =0V
21.2
ns
T J =25°C, I F =-2A,
di/dt= 100A/µs
18.7
nC
ZXMC3A16DN8
N-CHANNEL TYPICAL CHARACTERISTICS
10V
3V
2.5V
10
1
2V
VGS
0.1
1.5V
0.01
0.1
10V
T = 150°C
4V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
1
3.5V
3V
2.5V
4V
10
2V
1
1.5V
0.1
VGS
0.01
1V
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
1.6
T = 150°C
T = 25°C
1
VDS = 10V
0.1
1
2
3
RDS(on)
1.2
1.0
0.8
VGS(th)
0.6
VGS = VDS
ID = 250uA
0.4
-50
4
VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
100
100
T = 25°C
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
VGS = 10V
ID = 1.5A
1.4
2V
10
VGS
2.5V
1
3V
0.1
4V
10V
0.01
0.1
1
T = 150°C
10
T = 25°C
1
0.1
0.2
10
ID Drain Current (A)
On-Resistance v Drain Current
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
1.4
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE F - JULY 2004
6
ZXMC3A16DN8
N-CHANNEL TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
1000
VGS Gate-Source Voltage (V)
C Capacitance (pF)
1200
800
600
CISS
COSS
CRSS
400
200
0
0.1
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
PROVISIONAL ISSUE F - JULY 2004
7
ID = 3.5A
8
6
4
2
VDS = 15V
0
0
5
10
15
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
20
ZXMC3A16DN8
P-CHANNEL TYPICAL CHARACTERISTICS
-ID Drain Current (A)
4V
T = 150°C
3.5V
3V
2.5V
10
-ID Drain Current (A)
10V
T = 25°C
2V
1
-VGS
0.1
1.5V
0.01
0.1
1
4V
3.5V
3V
2.5V
2V
1
1.5V
-VGS
0.1
0.01
10
10V
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
T = 150°C
T = 25°C
1
-VDS = 10V
0.1
1
2
VGS = -10V
ID = -4.2A
1.4
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
10
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0.6
0.4
-50
3
-VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
T = 25°C
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
100
1.5V
100
-VGS
2V
10
2.5V
3V
1
3.5V
4V
0.1
10V
0.01
0.01
0.1
1
T = 150°C
10
0.1
0.010.0
10
-ID Drain Current (A)
T = 25°C
1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
PROVISIONAL ISSUE F - JULY 2004
8
ZXMC3A16DN8
P-CHANNEL TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
1200
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
1400
1000
800
CISS
COSS
600
CRSS
400
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
-ID = 4.2A
8
6
4
2
-VDS = 15V
0
0
5
10
15
20
25
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE F - JULY 2004
9
ZXMC3A16DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
-
-
-
-
-
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2004
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
PROVISIONAL ISSUE F - JULY 2004
10