ETC ZXMP3A16DN8(1)

ZXMP3A16DN8
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
SO8
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A16DN8TA
7’‘
12mm
500 units
ZXMP3A16DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMP
3A16
Top view
PROVISIONAL ISSUE B - JANUARY 2003
1
ZXMP3A16DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-30
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain Current@V GS =10V; T A =25⬚C (b)(d)
@V GS =10V; T A =70⬚C (b)(d)
@V GS =10V; T A =25⬚C (a)(d)
ID
-5.5
-4.4
-4.2
A
A
A
Pulsed Drain Current (c)
I DM
-20
A
Continuous Source Current (Body Diode)(b)
IS
-3.2
A
Pulsed Source Current (Body Diode)(c)
I SM
-20
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.8
14
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R θJA
100
°C/W
Junction to Ambient (b)(e)
R θJA
70
°C/W
Junction to Ambient (b)(d)
R θJA
60
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PROVISIONAL ISSUE B - JANUARY 2003
2
ZXMP3A16DN8
RDS(on)
10 Limited
Max Power Dissipation (W)
-ID Drain Current (A)
CHARACTERISTICS
1
DC
1s
100ms
100m
10m
10ms
Single Pulse
Tamb=25°C
One active die
100m
1ms
100µs
1
10
-VDS Drain-Source Voltage (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Two active die
One active die
20
60
80 100 120 140 160
Temperature (°C)
Derating Curve
Safe Operating Area
110
Tamb=25°C
100
One
active die
90
80
70
60 D=0.5
50
40
Single Pulse
30 D=0.2
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
MaximumPower (W)
Thermal Resistance (°C/W)
40
Single Pulse
Tamb=25°C
One active die
100
10
1
100µ 1m
Pulse Width (s)
10m 100m
1
10
100
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE B - JANUARY 2003
3
1k
ZXMP3A16DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
-30
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
V
I D =-250µA, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1.0
␮A
Gate-Body Leakage
I GSS
100
nA
V DS =-30V, V GS =0V
V GS =⫾20V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
V
I =-250␮A, V DS = V GS
0.045
0.070
⍀
⍀
V GS =-10V, I D =-4.2A
V GS =-4.5V, I D =-3.4A
V DS =-15V,I D =-4.2A
-1.0
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
g fs
9.2
S
Input Capacitance
C iss
970
pF
Output Capacitance
C oss
166
pF
Reverse Transfer Capacitance
C rss
116
pF
Turn-On Delay Time
t d(on)
1.95
ns
Rise Time
tr
3.82
ns
Turn-Off Delay Time
t d(off)
31.8
ns
Fall Time
tf
10.2
ns
Gate Charge
Qg
12.9
nC
Total Gate Charge
Qg
24.9
nC
Gate-Source Charge
Q gs
2.67
nC
Gate-Drain Charge
Q gd
3.86
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
D
DYNAMIC (3)
V DS =-15 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =-15V, I D =-1A
R G =6.0Ω, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-4.2A
V DS =-15V,V GS =-10V,
I D =-4.2A
SOURCE-DRAIN DIODE
-0.95
V
T J =25°C, I S =-3.6A,
V GS =0V
21.2
ns
18.7
nC
T J =25°C, I F =-2A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE B - JANUARY 2003
4
ZXMP3A16DN8
TYPICAL CHARACTERISTICS
-ID Drain Current (A)
4V
T = 150°C
3.5V
3V
2.5V
-ID Drain Current (A)
10V
T = 25°C
10
2V
1
-VGS
0.1
1.5V
0.01
0.1
1
4V
3.5V
3V
2.5V
2V
1
1.5V
-VGS
0.1
0.01
10
10V
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
T = 150°C
T = 25°C
1
-VDS = 10V
0.1
1
2
VGS = -10V
ID = -4.2A
1.4
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
10
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0.6
0.4
-50
3
-VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
T = 25°C
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
100
1.5V
100
-VGS
2V
10
2.5V
3V
1
3.5V
4V
0.1
10V
0.01
0.01
0.1
1
T = 150°C
10
0.1
0.010.0
10
-ID Drain Current (A)
T = 25°C
1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
PROVISIONAL ISSUE B - JANUARY 2003
5
ZXMP3A16DN8
TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
1200
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
1400
1000
800
CISS
600
COSS
CRSS
400
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
-ID = 4.2A
8
6
4
2
-VDS = 15V
0
0
5
10
15
20
25
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE B - JANUARY 2003
6
ZXMP3A16DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
MILLIMETRES
DIM
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
e
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
0.050 BSC
1.27 BSC
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex plc 2002
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Telefon: (49) 89 45 49 49 0
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[email protected]
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Telephone: (631) 360 2222
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Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Europe
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Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
[email protected]
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
PROVISIONAL ISSUE B - JANUARY 2003
7