ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP3A16N8TA 7” 12mm 500 units ZXMP3A16N8TC 13” 12mm 2500 units PINOUT DEVICE MARKING • ZXMP 3A16 Top View PROVISIONAL ISSUE A - JULY 2002 1 ZXMP3A16N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage V GS Continuous Drain Current V GS =-10V; T A =25°C (b) V GS =-10V; T A =70°C (b) V GS =-10V; T A =25°C (a) ID Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) LIMIT UNIT -30 V 20 V -6.7 -5.4 -5.6 A I DM -26 A IS -3.2 A Pulsed Source Current (Body Diode) (c) I SM -26 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.9 15.2 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 2.8 22.4 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 65 °C/W Junction to Ambient (b) R θJA 45 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - JULY 2002 2 ZXMP3A16N8 10 1 RDS(on) Limited DC 1s 100m 10m Max Power Dissipation (W) -ID Drain Current (A) CHARACTERISTICS 100ms 10ms Single Pulse Tamb=25°C 1ms 100µs 1 10 -VDS Drain-Source Voltage (V) 2.0 1.6 1.2 0.8 0.4 0.0 0 20 MaximumPower (W) Thermal Resistance (°C/W) Tamb=25°C 50 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ 1m D=0.1 10m 100m 1 10 80 100 120 140 160 Derating Curve 60 40 60 Temperature (°C) Safe Operating Area 70 40 100 Single Pulse Tamb=25°C 100 10 1 100µ 1m 1k 10m 100m 1 10 100 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE A - JULY 2002 3 1k ZXMP3A16N8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. V (BR)DSS -30 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V I D =-250µA, V GS =0V V DS =-30V, V GS =0V Zero Gate Voltage Drain Current I DSS -1.0 A Gate-Body Leakage I GSS 100 nA V GS =⫾20V, V DS =0V Gate-Source Threshold Voltage V GS(th) V ⍀ ⍀ I =-250A,V DS = V GS D V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A V DS =-15V,I D =-4.2A -1.0 Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) 0.040 0.070 g fs 9.2 S Input Capacitance C iss 970 pF Output Capacitance C oss 166 pF Reverse Transfer Capacitance C rss 116 pF Turn-On Delay Time t d(on) 1.95 ns Rise Time tr 3.82 ns Turn-Off Delay Time t d(off) 31.8 ns Fall Time tf 10.2 ns Gate Charge Qg 12.9 nC Total Gate Charge Qg 24.9 nC Gate-Source Charge Q gs 2.67 nC Gate-Drain Charge Q gd 3.86 nC Diode Forward Voltage (1) V SD -0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr DYNAMIC (3) V DS =-15 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =-15V, I D =-1A R G =6.0Ω, V GS =-10V V DS =-15V,V GS =-5V, I D =-4.2A V DS =-15V,V GS =-10V, I D =-4.2A SOURCE-DRAIN DIODE V T J =25°C, I S =-3.6A, V GS =0V 21.2 ns T J =25°C, I F =-2A, di/dt= 100A/µs 18.7 nC -0.95 NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JULY 2002 4 ZXMP3A16N8 CHARACTERISTICS -ID Drain Current (A) 4V T = 150°C 3.5V 3V 2.5V -ID Drain Current (A) 10V T = 25°C 10 2V 1 -VGS 0.1 1.5V 0.01 0.1 1 4V 3.5V 3V 2.5V 2V 1 1.5V -VGS 0.1 0.01 10 10V 10 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 T = 150°C T = 25°C 1 -VDS = 10V 0.1 1 2 VGS = -10V ID = -4.2A 1.4 Normalised RDS(on) and VGS(th) -ID Drain Current (A) 10 RDS(on) 1.2 1.0 VGS(th) 0.8 VGS = VDS ID = -250uA 0.6 0.4 -50 3 -VGS Gate-Source Voltage (V) 0 50 100 150 Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature T = 25°C -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) 100 1.5V 100 -VGS 2V 10 2.5V 3V 1 3.5V 4V 0.1 10V 0.01 0.01 0.1 1 T = 150°C 10 0.1 0.010.0 10 -ID Drain Current (A) T = 25°C 1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance v Drain Current PROVISIONAL ISSUE A - JULY 2002 5 ZXMP3A16N8 CHARACTERISTICS 10 1400 C Capacitance (pF) 1200 -VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz 1000 CISS 800 COSS 600 CRSS 400 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -ID = 4.2A 8 6 4 2 -VDS = 15V 0 0 5 10 15 20 25 Q - Charge (nC) Gate-Source Voltage v Gate Charge C URRENT R EGULATOR S AME AS D .U .T 50K QG 12V 0 .2 µ F -10V 0 .3 µ F Q GS V DS Q GD IG D .U .T VG VGS ID C HARGE G ATE C HARGE TEST C IRCUIT B ASIC G ATE C HARGE W AVEFORM RD VGS 10% VGS V DS RG V CC 90% P ULSE W IDTH < 1 µ S VDS D UTY F ACTOR£ 0 .1 % TD(ON) TR TD(OFF) TF S WI TCHING TIME W AVEFORMS S WI TCHING TIME TEST C IRCUIT PROVISIONAL ISSUE A - JULY 2002 6 ZXMP3A16N8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES MILLIMETRES DIM MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.50 © Zetex plc 2002 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (631) 360 2222 Fax: (631) 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE A - JULY 2002 7