ZETEX ZXMP3A16N8TA

ZXMP3A16N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.040
ID = -6.7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A16N8TA
7”
12mm
500 units
ZXMP3A16N8TC
13”
12mm
2500 units
PINOUT
DEVICE MARKING
• ZXMP
3A16
Top View
PROVISIONAL ISSUE A - JULY 2002
1
ZXMP3A16N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =-10V; T A =25°C (b)
V GS =-10V; T A =70°C (b)
V GS =-10V; T A =25°C (a)
ID
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
LIMIT
UNIT
-30
V
20
V
-6.7
-5.4
-5.6
A
I DM
-26
A
IS
-3.2
A
Pulsed Source Current (Body Diode) (c)
I SM
-26
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.9
15.2
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
2.8
22.4
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
65
°C/W
Junction to Ambient (b)
R θJA
45
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
PROVISIONAL ISSUE A - JULY 2002
2
ZXMP3A16N8
10
1
RDS(on)
Limited
DC
1s
100m
10m
Max Power Dissipation (W)
-ID Drain Current (A)
CHARACTERISTICS
100ms
10ms
Single Pulse
Tamb=25°C
1ms
100µs
1
10
-VDS Drain-Source Voltage (V)
2.0
1.6
1.2
0.8
0.4
0.0
0
20
MaximumPower (W)
Thermal Resistance (°C/W)
Tamb=25°C
50
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ 1m
D=0.1
10m 100m
1
10
80
100 120 140 160
Derating Curve
60
40
60
Temperature (°C)
Safe Operating Area
70
40
100
Single Pulse
Tamb=25°C
100
10
1
100µ 1m
1k
10m 100m
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE A - JULY 2002
3
1k
ZXMP3A16N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
V (BR)DSS
-30
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
I D =-250µA, V GS =0V
V DS =-30V, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1.0
␮A
Gate-Body Leakage
I GSS
100
nA
V GS =⫾20V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
V
⍀
⍀
I =-250␮A,V DS = V GS
D
V GS =-10V, I D =-4.2A
V GS =-4.5V, I D =-3.4A
V DS =-15V,I D =-4.2A
-1.0
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
0.040
0.070
g fs
9.2
S
Input Capacitance
C iss
970
pF
Output Capacitance
C oss
166
pF
Reverse Transfer Capacitance
C rss
116
pF
Turn-On Delay Time
t d(on)
1.95
ns
Rise Time
tr
3.82
ns
Turn-Off Delay Time
t d(off)
31.8
ns
Fall Time
tf
10.2
ns
Gate Charge
Qg
12.9
nC
Total Gate Charge
Qg
24.9
nC
Gate-Source Charge
Q gs
2.67
nC
Gate-Drain Charge
Q gd
3.86
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
DYNAMIC (3)
V DS =-15 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =-15V, I D =-1A
R G =6.0Ω, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-4.2A
V DS =-15V,V GS =-10V,
I D =-4.2A
SOURCE-DRAIN DIODE
V
T J =25°C, I S =-3.6A,
V GS =0V
21.2
ns
T J =25°C, I F =-2A,
di/dt= 100A/µs
18.7
nC
-0.95
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 2002
4
ZXMP3A16N8
CHARACTERISTICS
-ID Drain Current (A)
4V
T = 150°C
3.5V
3V
2.5V
-ID Drain Current (A)
10V
T = 25°C
10
2V
1
-VGS
0.1
1.5V
0.01
0.1
1
4V
3.5V
3V
2.5V
2V
1
1.5V
-VGS
0.1
0.01
10
10V
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
T = 150°C
T = 25°C
1
-VDS = 10V
0.1
1
2
VGS = -10V
ID = -4.2A
1.4
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
10
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0.6
0.4
-50
3
-VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
T = 25°C
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
100
1.5V
100
-VGS
2V
10
2.5V
3V
1
3.5V
4V
0.1
10V
0.01
0.01
0.1
1
T = 150°C
10
0.1
0.010.0
10
-ID Drain Current (A)
T = 25°C
1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
PROVISIONAL ISSUE A - JULY 2002
5
ZXMP3A16N8
CHARACTERISTICS
10
1400
C Capacitance (pF)
1200
-VGS Gate-Source Voltage (V)
VGS = 0V
f = 1MHz
1000
CISS
800
COSS
600
CRSS
400
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
-ID = 4.2A
8
6
4
2
-VDS = 15V
0
0
5
10
15
20
25
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
C URRENT
R EGULATOR
S AME AS
D .U .T
50K
QG
12V
0 .2 µ F
-10V
0 .3 µ F
Q GS
V DS
Q GD
IG
D .U .T
VG
VGS
ID
C HARGE
G ATE C HARGE TEST C IRCUIT
B ASIC G ATE C HARGE W AVEFORM
RD
VGS
10%
VGS
V DS
RG
V CC
90%
P ULSE W IDTH < 1 µ S
VDS
D UTY F ACTOR£ 0 .1 %
TD(ON)
TR
TD(OFF)
TF
S WI TCHING TIME W AVEFORMS
S WI TCHING TIME TEST C IRCUIT
PROVISIONAL ISSUE A - JULY 2002
6
ZXMP3A16N8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
MILLIMETRES
DIM
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
e
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
0.050 BSC
1.27 BSC
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex plc 2002
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[email protected]
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PROVISIONAL ISSUE A - JULY 2002
7