2SC4629 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4629 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9 V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 15 — — V I C = 10 µA, IE = 0 Collector cutoff current I CBO — — 1 µA VCB = 12 V, IE = 0 I CEO — — 1 mA VCE = 9 V, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 40 120 250 — VCE = 5 V, IC = 20 mA Collector output capacitance Cob — 1.15 1.85 pF VCB = 5 V, IE = 0, f = 1MHz Gain bandwidth product fT 5.5 8.0 — GHz VCE = 5 V, IC = 20 mA Power gain PG 8.5 11.5 — dB VCE = 5 V, IC = 20 mA, f = 900 MHz Noise figure NF — 1.2 25 dB VCE = 5 V, IC = 5 mA, f = 900 MHz See characteristic curve of 2SC4592 2 2SC4629 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 900 600 300 0 50 100 Ambient Temperature Ta (°C) 150 3 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. 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