2SC2462 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2462 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE –100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 40 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 30 V, IE = 0 Emitter cutoff current I EBO — — 0.5 µA VEB = 2 V, IC = 0 100 — 500 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — — 0.2 V I C = 10 mA, IB = 1 mA Base to emitter voltage VBE — — 0.75 V VCE = 12 V, IC = 2 mA Note: 1. The 2SC2462 is grouped by h FE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 See characteristic curves of 2SC458 (LG). 2 VCE = 12 V, IC = 2 mA 2SC2462 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 150 100 50 0 50 100 Ambient Temperature Ta (°C) 150 3 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 3 – 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. 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