2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30 –55 V Collector to emitter voltage VCEO –30 –50 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –30 — — –55 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –30 — — –50 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.5 — — –0.5 µA VCB = –18 V, IE = 0 Emitter cutoff current I EBO — — –0.5 — — –0.5 µA VEB = –2 V, IC = 0 100 — 500 100 — 320 Base to emitter voltage VBE — — –0.8 — — –0.8 V VCE = –12 V, I C = –2 mA Collector to emitter saturation voltage — — –0.2 — — –0.2 V I C = –10 mA, I B = –1 mA Gain bandwidth product f T 200 280 — 200 280 — MHz VCB = –12 V, I C = –2 mA Collector output capacitance — 3.3 4.0 — 3.3 4.0 pF VCB = –10 V, IE = 0, f = 1 MHz DC current trnsfer ratio Note: hFE* 1 VCE(sat) Cob 1. The 2SA1029 and 2SA1030 are grouped by h FE as follows. B C D 2SA1029 100 to 200 160 to 320 250 to 500 2SA1030 100 to 200 160 to 320 — See characteristic curves of 2SA1031 and 2SA1032. 2 VCE = –12 V, I C = –2 mA 2SA1029, 2SA1030 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 0 100 150 50 Ambient Temperature Ta (°C) 3 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. 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