INTEGRAL IZ74LV02

IN74LV02
QUAD 2-INPUT NOR GATE
The IN74LV02 is a low-voltage Si-gate CMOS
device that is pin and function compatible with
74HC/HCT02A, 74ALS02
Features:
• Wide Operating Voltage: 1.0÷5.5 V
• Input voltage levels are compatible with standard
C-MOS levels
• Accepts TTL input levels between VCC =2.7 V and
VCC =3.6 V
• Output voltage levels are compatible with input
levels C-MOS, N-MOS and TTL microcircuits.
• Maximum input current: 1.0 mkA; 0.1 mkA at Т =
25 °С.
• Consumption current 8 mA.
ORDERING INFORMATION
IN74LV02N
Plastic
IN74LV02D
SOIC
IZ74LV02
Chip
TA = -40° ÷ 125° C for all packages
IN74LV02 truth table
Input
A
L
L
H
H
Output
Y= A + B
H
L
L
L
B
L
H
L
H
Note –
H - high voltage level;
L - low voltage level;
Pins description in IN74LV02D
Pinout
Y1 01
14
Vcc
A1 02
13
Y4
B1 03
12
B4
Y2 04
11
A4
A2 05
10
Y3
B2 06
09
B3
GND 07
08
A3
Pin No.
01
Symbol
Y1
Output
02
03
04
А1
В1
Input
Input
Output
Y2
05
06
07
08
09
10
А2
В2
GND
А3
В3
11
12
13
А4
В4
Y4
14
VCC
Y3
1
Pin description
Input
Input
Common output
Input
Input
Output
Input
Input
Output
Supply output from voltage
source
IN74LV02
Absolute maximum ratings*
Symbol
Parameter
VCC
Supply voltage
IIK *1
IOK *2
Value
Unit
from -0.5 to
+5.0
V
Input diode current
±20
mA
Output diode current
±50
mA
Output current source-drain
±25
mA
ICC
Supply output current
±50
mA
IGND
Common output current
±50
mA
PD
Dissipation power at free air change,
Plastic
DIP
*4
4
SOIC *
750
500
3
IO *
Tstg
Storage temperature
mW
°C
from -65 to
+150
TL
°C
260
*
Under absolute maximum conditions operation of microcircuits is not guaranteed.
Operation under maximum conditions is guaranteed.
*1 If VI < -0.5V or VI > VCC + 0.5 V.
*2 If VO < -0.5V or VO > VCC + 0.5 V.
*3 If -0.5V < VO < VCC + 0.5 V.
*4 Under operation in the temperature range from 65°С to 125°C value of dissipation
power drops down - to 12 mW/°C for Plastic DIP
- to 8 mW/°C for SOIC
Maximum conditions
Symbol
VCC
VIN
VOUT
TA
tLH, tHL
Parameter
Supply voltage
Input voltage
Output voltage
Operation temperature. For all packages
Period of signal rise and 1.0 ≤ VCC < 1.2 В
fall edges (Figure 1)
2.0 ≤ VCC < 2.7 В
2.7 ≤ VCC < 3.6 В
3.6 ≤ VCC ≤ 5.5 В
2
Min
Max
Unit
1.2
0
0
-40
0
5.5
VCC
VCC
125
500
200
100
50
V
V
V
°C
ns
IN74LV02
DC electrical characteristics
Sym
bol
Parameter
V ,
Test conditions CC
V
VIH High
level
voltage
input VO = VCC-0.1 V
VIL Low
level
voltage
input VO =0.1 B
VOH High
level
voltage
VOL
II
ICC
ICC1
output VI = VIH or VIL
IO = -100 uA
1.2
2.0
2.7
3.0
3.6
4.5
5.5
1.2
2.0
2.7
3.0
3.6
4.5
5.5
1.2
2.0
2.7
3.0
3.6
4.5
5.5
3.0
25°C
min
0.9
1.4
2.0
2.0
2.0
3.15
3.85
1.05
1.85
2.55
2.85
3.45
4.35
5.35
2.48
max
0.3
0.6
0.8
0.8
0.8
4.35
5.35
-
Value
-40oC to
85 oC
min max
0.9
1.4
2.0
2.0
2.0
3.15 3.85 0.3
0.6
0.8
0.8
0.8
- 4.35
- 5.35
1.0
1.8
2.5
2.8
3.4
4.3
5.3
2.40 -
-40 oC to
Unit
125 oC
min max
V
0.9
1.4
2.0
2.0
2.0
3.15 3.85 V
0.3
0.6
0.8
0.8
0.8
- 4.35
- 5.35
V
1.0
1.8
2.5
2.8
3.4
4.3
5.3
2.20 V
VI = VIH or VIL;
IO = -6 mA
VI = VIH or VIL;
4.5 3.70 - 3.60 - 3.50 IO = -12 mA
0.2
0.2
- 0.15 Low
level
output VI = VIH or VIL 1.2
0.2
0.2
- 0.15 voltage
IO = 100 uA
2.0
0.2
0.2
- 0.15 2.7
0.2
0.2
- 0.15 3.0
0.2
0.2
- 0.15 3.6
0.2
0.2
- 0.15 4.5
0.2
0.2
- 0.15 5.5
VI = VIH or VIL; IO 3.0
- 0.33 0.4
0.5
= 6 mA
VI = VIH or VIL; IO 4.5
- 0.40 - 0.55 - 0.65
= 12 mA
Input current
VI = VCC or 0 V
5.5
- ±0.1 - ±1.0 - ±1.0
Consumption current VI =VCC or 0 V 5.5
8.0
80
160
IO = 0 uA
Additional
input VI =VCC –0.6 V; 5.5
8.0
80
160
consumption current IO = 0 uA
3
V
V
V
V
uA
uA
uA
IN74LV02
AC electrical characteristics (tLH = tHL = 2.5 ns, CL=50 pF, RL = 1 KOhm ,)
Value
–40
–40
Symb
Test
Parameter
VCC, V
25 °C
ol
conditions
to 85 °C to 125 °C Unit
min max min max min max
tPHL, Propagation delay Fig.1
1.2
80
85
95
ns
tPLH time
when
2.0
17
21
26
switching "on", "off"
2.7
12
15
19
3.0
10
12
15
4.5
8
10
13
CI Input capacity
3.0
7
pF
CРD Dynamic capacity
VI = 0 V
3.0
44
or VCC
- Time diagram of input and output pulses
A, B
tLH
tHL
0.9
0.9
VCC
VI
VI
0.1
tPH
0.1
tPL
L
H
0.9
GND
0.9
VI
B, A
0.1
tTHL
VI
0.1
tTLH
VI = 0.5VCC
Fig.1
4
VCC