FAIRCHILD USB10H

USB10H
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
•
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
-1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V
RDS(on) = 0.250Ω @ VGS = -2.5 V
•
Low gate charge (3 nC typical).
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
•
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
• Load switch
• Battery protection
• Power management
D2
S1
D1
4
3
5
2
6
1
G2
SuperSOT TM -6
S2
G1
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
(Note 1a)
-1.9
-5
A
PD
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
0.9
- Continuous
- Pulsed
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
0.7
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
Package Outlines and Ordering Information
Device Marking
.306
1999 Fairchild Semiconductor Corporation
Device
Reel Size
Tape Width
Quantity
USB10H
7’’
8mm
3000 units
USB10H Rev. C
USB10H
February 1999
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
-20
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
IGSSF
Gate-Body Leakage Current, Forward
VGS = 8 V, VDS = 0 V
100
µA
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -8 V, VDS = 0 V
-100
nA
-1.5
V
On Characteristics
V
mV/°C
-18
-1
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to 25°C
3
0.127
0.182
0.194
ID(on)
On-State Drain Current
VGS = -4.5 V, ID = -1.9 A
VGS = -4.5 V, ID = -1.9 A @125°C
VGS = -2.5 V, ID = -1.7 A
VGS = -4.5 V, VDS =- 5 V
gFS
Forward Transconductance
VDS = -5 V, ID = -1.9 A
4
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
441
pF
127
pF
67
pF
-0.4
-0.9
mV/°C
0.170
0.270
0.250
-5
Ω
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 2)
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ω
VDS = -10 V, ID = -1.9 A,
VGS = -4.5 V
6
12
ns
9
18
ns
14
25
ns
3
9
ns
3
4.2
nC
0.7
nC
0.8
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.8 A
(Note 2)
-0.8
-0.8
A
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
a) 130 °C/W when
mounted on a 0.125 in2
pad of 2 oz. copper.
b) 140 °C/W when
mounted on a 0.005 in2
pad of 2 oz. copper.
c) 180 °C/W when
mounted on a 0.0015 in2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
USB10H Rev. C
USB10H
Electrical Characteristics
USB10H
Typical Characteristics
2
V GS= -4.5V
-4.0V
10
8
R D S(on), NORMALI ZED
-3.5V
-3.0V
6
-2.5V
4
-2.0V
2
DRAIN-SOURCE O N-RESI STANCE
- ID , DRAIN-SOURCE CURRENT (A)
12
1.8
VGS = -2 .5 V
1.6
1.4
-3.0V
-3.5V
1.2
-4.0V
-4.5V
1
0.8
0
0
0
1
2
3
4
2
4
5
Figure 1. On-Region Characteristics.
10
0.5
R D S(ON) , ON-RESISTANCE (OHM)
I D = -1.9A
V GS= -4.5V
1.4
1.2
1
0.8
0.6
-50
ID = -1A
0.4
0.3
0.2
TJ = 1 25° C
0.1
25° C
0
-25
0
25
50
75
100
125
150
1
2
3
4
5
-VGS , GATE TO SOURCE VOLT AG E (V)
TJ , JUNCTION T EM PERAT URE (°C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
10
VDS = -5V
-I S , REVERSE DRAIN CURRENT (A)
R D S(ON), NORMALIZED
DRAIN-SOURCE O N-RESISTANCE
8
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
- ID , DRAIN CURRENT (A)
6
- I D , DRAIN CURRENT (A)
-V DS , DRAIN-SOURCE VOLTAG E (V)
TJ = -55°C
25°C
1 25°C
8
6
4
2
0
0
1
2
3
4
-VGS , GATE T O SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
VGS = 0V
1
TJ = 125°C
25 °C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD , BODY DIODE FORWARD VOLT AGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
USB10H Rev. C
(continued)
1000
5
I D = -1.9A
VDS = -5V
4
-10V
CAPACI TANCE (pF)
-VGS , GATE-SOURCE VOLT AGE (V)
USB10H
Typical Characteristics
-15V
3
2
Ciss
300
Coss
100
1
0
0
1
2
3
30
0.1
4
0.2
Q g , GAT E CHARGE (nC)
T
IMI
1
10
1s
DC
0.3
V GS = -4.5V
SINGLE PULSE
R θJA = 180°C/W
T A = 25°C
0.2
us
5
10
20
0m
s
3
2
1
0.5
1
2
5
10
-V DS , DRAIN-SOURCE VOLTAGE (V)
20
0
0.01
50
r(t), NORMALIZED EFFECTIVE
Figure 9. Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
SINGLE PULSE
R θJA=180°C/W
TA = 25°C
4
1m
s
10m
s
POWER (W)
L
N)
S(O
RD
3
0.01
0.1
2
5
100
10
0.03
1
Figure 8. Capacitance Characteristics.
30
0.1
0.5
-VDS , DRAIN T O SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
-ID, DRAIN CURRENT (A)
Crss
f = 1 MHz
VGS = 0 V
0.1
1
10
SINGLE PULSE TIME (SEC)
100
300
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
D = 0.5
0.2
0.2
0.1
R θJA (t) = r(t) * R θJA
R θJA =180°C/W
0.1
P(pk)
0.05
t1
0.05
0.02
0.01
0.02
0.01
0.0001
t2
TJ - T A = P * R JA (t)
θ
Duty Cycle, D = t 1 / t 2
Single Pulse
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
USB10H Rev. C
SuperSOTTM-6 Tape and Reel Data and Package Dimensions
SSOT-6 Packaging
Configuration: Figur e 1.0
Packaging Description:
Customize Label
SSOT-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Anti static Cover Tape
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
F63TNR
Label
Embossed
Carrier Tape
631
631
631
631
631
SSOT-6 Packaging Information
Packaging Option
Standard
(no f l ow c ode )
Pin 1
D87Z
SSOT-6 Unit Orientation
Packaging type
TNR
TNR
Qty per Reel/Tube/Bag
3,000
10,000
Reel Size
7" Dia
13"
184x187x47
343x343x64
Max qty per Box
9,000
30,000
Weight per unit (gm)
0.0158
0.0158
Weight per Reel (kg)
0.1440
0.4700
Box Dimension (mm)
343mm x 342mm x 64mm
Intermediate box fo r D87Z Option
F63TNR Label
Note/Comments
F63TNR
Label
F63TNR Label sa mpl e
184mm x 187mm x 47mm
Pizza Box fo r Standar d Opti on
F63TNR
Label
LOT: CBVK741B019
QTY: 3000
FSID: FDC633N
SPEC:
D/C1: D9842
D/C2:
SSOT-6 Tape Leader and Trailer
Configuration: Figur e 2.0
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
1998 Fairchild Semiconductor Corporation
Comp onent s
Traile r Tape
300mm mi nimum or
75 empty poc kets
Lead er Tape
500mm mi nimum or
125 emp ty poc kets
August 1999, Rev. C
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
W
8.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
F
6.25
min
3.50
+/-0.05
P1
P0
4.0
+/-0.1
4.0
+/-0.1
K0
T
1.37
+/-0.10
0.255
+/-0.150
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
5.2
+/-0.3
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SSOT-6 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
7" Dia
7.00
177.8
8mm
13" Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. C
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
1998 Fairchild Semiconductor Corporation
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench 
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D