Data Sheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. · · · · The AP1661 includes an internal start-up timer for stand-alone applications, a one-quadrant multiplier to realize near unity power factor and a zero current detector to ensure DCM boundary conduction operation. The totem pole output stage is capable of driving power MOSFET with 600mA source current and 800mA sink current. · · · · Designed with advanced BiCMOS process, the AP1661 features low start-up current, low operation current and low power dissipation. The AP1661 also has rich protection features including over-voltage protection, input under-voltage lockout with hysteresis and multiplier output clamp to limit maximum peak current. · AP1661 Zero Current Detection Control for DCM Boundary Conduction Mode Adjustable Output Voltage with Precise OverVoltage Protection Low Start-up Current with 50μA Typical Value Low Operating Supply Current with 4mA Typical Value 1% Precision Internal Reference Voltage Internal Start-up Timer Disable Function for Reduced Current Consumption Totem Pole Output with 600mA Source Current and 800mA Sink Current Capability Under-Voltage Lockout with 2.5V of Hysteresis Applications · · · This IC is available in SOIC-8 and DIP-8 packages. SOIC-8 AC-DC Adapter Off-line SMPS Electronic Ballast DIP-8 Figure 1. Package Types of AP1661 Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Pin Configuration M Package/P Package (SOIC-8/DIP-8) INV 1 8 VCC COMP 2 7 GD MULT 3 6 GND CS 4 5 ZCD Figure 2. Pin Configuration of AP1661 (Top View) Pin Description Pin Number Pin Name 1 INV Function 2 COMP Output of the error amplifier 3 MULT Input of the multiplier 4 CS Inverting input of the error amplifier Input of the current control loop comparator 5 ZCD Zero current detection input. If it is connected to GND, the device is disabled 6 GND Ground. Current return for gate driver and control circuits of the IC 7 GD 8 VCC Gate driver output Supply voltage of gate driver and control circuits of the IC Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Functional Block Diagram COMP MULT 2 INV CS 3 4 1 Multiplier Voltage Regulation VCC Overvoltage Detection 13V 8 R Q S Internal R1 Supply 7.5V 22V VCC 7 GD Driver Vref R2 Zero Current Detector 2.1V 1.6V Starter Enable Disable 6 5 ZCD GND Figure 3. Functional Block Diagram of AP1661 Ordering Information AP1661 - Circuit Type E1: Lead Free G1: Green Package M: SOIC-8 P: DIP-8 TR: Tape and Reel Blank: Tube Package Temperature Range SOIC-8 -40 to 85oC DIP-8 -40 to 85oC Part Number Lead Free Marking ID Green Lead Free Green Packing Type AP1661M-E1 AP1661M-G1 1661M-E1 1661M-G1 Tube AP1661MTR-E1 AP1661MTR-G1 1661M-E1 1661M-G1 Tape & Reel AP1661P-E1 AP1661P-G1 AP1661P-E1 AP1661P-G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage VCC 20 V Operating Supply Current ICC 30 mA Driver Output Current IOUT ±800 mA -0.3 to 7 V -0.3 to 7 V Input/Output of Error Amplifier, Input of Multiplier Current Sense Input VINV, VCOMP, VMULT VCS Zero Current Detector Input IZCD Thermal Resistance Junction-Ambient RθJA Power Dissipation and Thermal Characteristics @ TA=50oC PTOT Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) Source -50 Sink 10 DIP-8 100 SOIC-8 150 DIP-8 1 SOIC-8 0.65 mA oC/W W TJ -40 to150 oC TSTG -65 to 150 oC TLEAD 260 o C ESD (Human Body Model) 3000 V ESD (Machine Model) 300 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Electrical Characteristics VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit 11 12 13 V 8.7 9.5 10.3 V 2.2 2.5 2.8 V 20 V 50 90 μA CL=1nF @frequency=70KHz 4 5.5 In OVP condition Vpin1=2.7V 1.4 2.1 2.6 4 mA Under Voltage Lockout Section Turn-on Threshold VCC-ON VCC rising Turn-off Threshold VCC-OFF VCC falling Hysterisis VCC-HYS VCC Operating Range VCC After turn-on 10.3 Total Supply Section Start-up Current Operating Supply Current ISTART-UP ICC Quiescent Current IQ Quiescent Current IQ VCC Zener Voltage VZ VCC=11V before turn-on 20 Vpin5≤150mV, VCC>VCC-OFF mA 1.4 2.1 mA Vpin5≤150mV, VCC<VCC-OFF 20 50 90 μA ICC=20mA 20 22 24 V 2.465 2.5 2.535 Error Amplifier Section Voltage Feedback Input Threshold VINV Line Regulation TA=25 oC 10.3V<VCC<20V VCC=10.3V to 20V Input Bias Current IINV VINV=0V Voltage Gain GV Open Loop Gain Bandwidth GB Output Voltage Output Current 2.44 60 V 2.56 2 5 mV -0.1 -1 μA 80 dB 1 MHz Upper Clamp Voltage VCOMP-H ISOURCE=0.5mA 5.8 Lower Clamp Voltage VCOMP-L ISINK=0.5mA 2.25 Source Current ICOMP-H VCOMP=4V, VINV=2.4V -2 -4 Sink Current ICOMP-L VCOMP=4V, VINV=2.6V 2.5 4.5 V Enable Threshold -8 720 VINV-TH mA mV Multiplier Section Linear Input Voltage Range Output Maximum Slope Gain VMULT ΔVCS/ ΔVMULT k 0 to 3 VMULT: 0 to 0.5V, VCOMP=Upper Clamp Voltage VMULT=1V, VCOMP=4V Aug. 2008 Rev. 1. 1 0 to 3.5 V 1.7 0.45 0.6 0.75 1/V BCD Semiconductor Manufacturing Limited 5 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Electrical Characteristics (Continued) VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit -0.05 -1.0 μA Current Sense Section Input Bias Current ICS Current Sense Offset Voltage VCS-OFFSET Current Sense Reference Clamp VCS-CLAMP Delay to Output VCS =0V VMULT=0V 30 VMULT=2.5V 5 VCOMP=Upper Clamp Voltage, VMULT=2.5V 1.6 td(H-L) mV 1.7 1.8 V 200 450 ns Zero Current Detection Section Input Threshold Voltage, VZCD Rising Edge Hysteresis Voltage Upper Clamp Voltage VZCD-R (Note 2) VZCD-RTH (Note 2) 0.3 0.5 0.7 IZCD=20μA 4.5 5.1 5.9 IZCD=3mA 4.7 5.2 6.1 IZCD=-3mA 0.3 0.65 VZCD-H 2.1 V V V Lower Clamp Voltage VZCD-L 1 V Source Current Capability IZCD-SR -3 -10 mA Sink Current Capability IZCD-SN 3 10 mA 250 mV Sink Bias Current IZCD-B Disable Threshold VZCD-DIS Disable Hysterisis VZCD-HYS Restart Current After Disable IZCD-RES 1V≤VZCD≤4.5 V μA 2 150 200 100 VZCD<VDIS; VCC>VCC-OFF -100 -200 mV -300 μA Drive Output Section Dropout Voltage VOH VOL IGD-SOURCE=200 mA, VCC=12V 2.5 3 IGD-SOURCE=20 mA, VCC=12V 2 2.6 IGD-SINK=200 mA, VCC=12V 0.9 1.9 V V Output Voltage Rise Time tR CL=1nF 40 100 ns Output Voltage Fall Time tF CL=1nF 40 100 ns 13 15 V 1.1 V Output Clamp Voltage UVLO Saturation VO-CLAMP VOS IGD-SOURCE=5 mA, VCC=20V 10 VCC=0 to VCC-ON, ISINK=10mA Output Over Voltage Section OVP Triggering Current Static OVP Threshold IOVP 35 40 45 μA VOVP_TH 2.1 2.25 2.4 V tSTART 70 150 400 μs Restart Timer Restart Timer Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Typical Performance Characteristics 6 33.5 33.0 5 Supply Current (mA) 32.5 32.0 IOVP (μA) 31.5 31.0 30.5 30.0 29.5 4 3 2 1 29.0 28.5 -40 0 -20 0 20 40 60 80 100 120 140 0 5 10 15 20 25 Supply Voltage (V) O Temperature ( C) Figure 5. Supply Current vs. Supply Voltage Figure 4. OVP Current Threshold vs. Temperature 12.5 2.550 VCC-ON 2.525 12.0 2.500 Voltage (V) Voltage (v) 11.5 11.0 2.475 2.450 2.425 10.5 2.400 VCC-OFF 10.0 2.375 9.5 -60 -40 -20 0 20 40 60 80 100 120 2.350 -40 140 -20 0 20 40 60 80 100 120 140 O O Temperature ( C) Temperature ( C) Figure 6. Under Voltage Lockout Threshold vs. Temperature Aug. 2008 Rev. 1. 1 Figure 7. Voltage Feedback Input Threshold vs. Temperature BCD Semiconductor Manufacturing Limited 7 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Typical Performance Characteristics (Continued) 0.0 4.5 4.0 -0.5 3.5 -1.0 Voltage (V) Voltage (V) 3.0 2.5 2.0 1.5 -1.5 -2.0 1.0 -2.5 0.5 0.0 -3.0 0 100 200 300 400 500 0 100 200 Current (mA) 300 400 500 Current (mA) Figure 9. Output Saturation Voltage vs. Source Current Figure 8. Output Saturation Voltage vs. Sink Current 1.8 1.6 1.4 VCOMP=2.6 VCOMP=2.8 VCOMP=3 VCOMP=3.2 VCOMP=3.5 VCOMP=4 VCOMP=4.5 VCOMP=5 VCOMP=MAX VCS (V) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VMULT (V) Figure 10. Multiplier Characteristics Family Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 8 Data Sheet POWER FACTOR CORRECTION CONTROLLER Functional Block Description AP1661 is a high performance power factor correction controller which operates in DCM boundary conduction mode. The PFC converter's switch will be turned on when the inductor current reduces to zero and turned off when the sensed inductor current reaches the required reference which is decided by the output of multiplier. The error amplifier regulates the PFC output voltage. The internal reference on the non-inverting input of the error amplifier is 2.5V. The error amplifier's inverting input (INV) is connected to an external resistor divider which senses the output voltage. The output of error amplifier is one of the two inputs of multiplier. A compensation loop is connected outside between INV and the error amplifier output. Normally, the compensation loop bandwidth is set very low to realize high power factor for PFC converter. To make the over voltage protection fast, the internal OVP function is added. If the output over voltage happens, excess current will flow into the output pin of the error amplifier through the feedback compensation capacitor. (see Figure 11) The AP1661 monitors the current flowing into the error amplifier output pin. When the detected current is higher than 40μA, the INV 1 R2 Error Amplifier COMP MULT 2 3 R1 = ΔVOVP 40 μA Multiplier The multiplier has two inputs. One (Pin 3) is the divided AC sinusoidal voltage which makes the current sense comparator threshold voltage vary from zero to peak value. The other input is the output of error amplifier (Pin 2). In this way, the input average current wave will be sinusoidal as well as reflects the load status. Accordingly a high power factor and good THD are achieved. The multiplier transfer character is designed to be linear over a wide dynamic range, namely, 0 V to 3V for Pin 3 and 2.0 V to 5.8 V for Pin 2. The relationship between the multiplier output and inputs is described as below equation. VCS = k × (VCOMP − 2.5) × VMULT where VCS (Multiplier output) is the reference for the current sense, k is the multiplier gain, VCOMP is the voltage on pin 2 (error amplifier output) and VMULT is the voltage on pin 3. I R1 dynamic OVP is trigged. The IC will be disabled and the drive signal is stopped. If the output over voltage lasts so long that the output of error amplifier goes below 2.25V, static OVP will take place. Also the IC will be disabled until the output of error amplifier goes back to its linear region. R1 and R2 (see Fig. 11) will be selected as below: R1 Vo = −1 R 2 2.5V Error Amplifier and Over-Voltage Protection VO AP1661 Driver IOVP Multiplier Current Sense/Current Sense Comparator PWM The PFC switch's turn-on current is sensed through an external resistor in series with the switch. When the sensed voltage exceeds the threshold voltage (the multiplier output), the current sense comparator will become low and the external MOSFET will be turned off. This insures a cycle-by-cycle current mode control operation. The maximum current sense reference is 1.8V. The max value usually happens at startup process or abnormal conditions such as short load. 2.5V 2.25V IOVP 40µA + AP1661 Figure 11. Error Amplifier and OVP Block Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 9 Data Sheet POWER FACTOR CORRECTION CONTROLLER Functional Block Description (Continued) AP1661 voltage decreases below 1.6V, the gate drive signal becomes high to turn on the external MOSFET. 500mV of hysteresis is provided to avoid false triggering. The ZCD pin can be used for disabling the IC. Making its voltage below 0.15V or short to the ground will disable the device thus reduce the IC supply current consumption. Zero Current Detection AP1661 is a DCM boundary conduction current mode PFC controller. Usually, the zero current detection (ZCD) voltage signal comes from the auxiliary winding of the boost inductor. When the ZCD pin Typical Application L2 160μH L3 D2 MUR460 R1 820K R6 180K L1 500μH C1 220nF/275V R3 1M D1 R7 180K D3 1N4148 F1 2.5A/250V NTC C2 220nF 500V C3 330nF 500V L N Z1 15V R9 68K R4 680K C10 22μF 25V R5 10K JC2 R2 470K C7 680nF R14 12K C8 330nF ZCD COMP JC1 85 to 265V AC GND C6 R8 12nF 100 INV VCC GD MULT CS R13 10 Q1 11N65C3 C9 47μF 450V R10 8.2K GND C4 100nF U1 AP1661 R16 0.33/1W L3: Core type RM10, material 3C90 primary: 660uH, 66 turns of litze wire 0.1mm*30 secondary: 7 turns wire of 0.2mm Figure 12. 85 to 265V Wide Range Input 90W PFC Demo Board Electrical Schematic Circuit Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 10 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 11 Data Sheet POWER FACTOR CORRECTION CONTROLLER AP1661 Mechanical Dimensions (Continued) SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 φ 0.800(0.031) 0.300(0.012) R0.150(0.006) 0.100(0.004) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.190(0.007) 0.250(0.010) 1° 5° 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 12 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. 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