SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current 2 A H : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. 3 G ・Low Saturation Voltage D : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. 1 ・Complementary to the KTN2907S/2907AS. P J N MAXIMUM RATING (Ta=25℃) 1. EMITTER RATING CHARACTERISTIC MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C P DIM A B C D E G H J K L M N P SYMBOL UNIT KTN2222S KTN2222AS Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 6 V Collector Current Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range IC 600 mA PC 350 mW Tj 150 ℃ Tstg -55～150 ℃ 2. BASE 3. COLLECTOR SOT-23 Note : PC* : Package Mounted on 99.5% alumina 10×8×0.6mm. Marking Lot No. Type Name ZB Type Name Lot No. ZG MARK SPEC TYPE MARK KTN2222S Z B KTN2222AS Z G 1999. 5. 4 Revision No : 2 1/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current SYMBOL KTN2222AS KTN2222S Collector Cut-off Current KTN2222AS Emitter Cut-off Current KTN2222AS Collector-Base KTN2222S Breakdown Voltage KTN2222AS Collector-Emitter * KTN2222AS Emitter-Base KTN2222S Breakdown Voltage KTN2222AS 10 nA VCB=50V, IE=0 - - 0.01 VCB=60V, IE=0 - - 0.01 IEBO VEB=3V, IC=0 - - 10 V(BR)CBO 60 - - IC=10μA, IE=0 75 - - 30 - - 40 - - 5 - - 6 - - ICBO V(BR)CEO V(BR)EBO IE=10mA, IB=0 IE=10μA, IC=0 hFE(2) IC=1mA, VCE=10V 50 - - KTN2222AS hFE(3) IC=10mA, VCE=10V 75 - - hFE(4) IC=150mA, VCE=10V 100 - 300 hFE(5) IC=500mA, VCE=10V 30 - - 40 - - VCE(sat)1 IC=150mA, IB=15mA - - 0.4 - - 0.3 - - 1.6 - - 1 - - 1.3 0.6 - 1.2 - - 2.6 - - 2.0 VCE=20V, IC=20mA, 250 - - f=100MHz 300 - - - - 8 - - 30 - - 25 KTN2222AS μA nA V KTN2222S V V V KTN2222AS KTN2222S Saturation Voltage - - KTN2222S * - - KTN2222S Base-Emitter VCE=60V, VEB(OFF)=3V 35 KTN2222AS * UNIT IC=0.1mA, VCE=10V * Saturation Voltage MAX. hFE(1) KTN2222S Collector-Emitter TYP. KTN2222S Breakdown Voltage DC Current Gain MIN. ICEX TEST CONDITION KTN2222AS VCE(sat)2 IC=500mA, IB=50mA VBE(sat)1 IC=150mA, IB=15mA V KTN2222S KTN2222AS KTN2222S Transition Frequency KTN2222AS Collector Output Capacitance VBE(sat)2 fT IC=500mA, IB=50mA Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz KTN2222S Input Capacitance KTN2222AS MHz pF pF * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%. 1999. 5. 4 Revision No : 2 2/5 KTN2222S/AS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Input Impedance Voltage Feedback Ratio Small-Singal Current Gain Collector Output Admittance KTN2222AS KTN2222AS KTN2222AS KTN2222AS SYMBOL hie hre hfe hoe TEST CONDITION MIN. TYP. MAX. IC=1mA, VCE=10V, f=1kHz 2 - 8 IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25 IC=1mA, VCE=10V, f=1kHz - - 8 IC=10mA, VCE=10V, f=1kHz - - 4 IC=1mA, VCE=10V, f=1kHz 50 - 300 IC=10mA, VCE=10V, f=1kHz 75 - 375 IC=1mA, VCE=10V, f=1kHz 5 - 35 IC=10mA, VCE=10V, f=1kHz 25 - 200 - - 150 pS - - 4 dB IE=20mA, VCB=20V, f=31.8MHz KTN2222AS Cc・rbb' Noise Figure KTN2222AS NF Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10 Rise Time tr IC=150mA, IB1=15mA - - 25 Storage Time tstg VCC=30V, IC=150mA - - 225 Fall Time tf IB1=-IB2=15mA - - 60 Switching Time 1999. 5. 4 Revision No : 2 Rg=1kΩ, f=1kHz kΩ x10-4 Collector-Base Time Constant IC=100μA, VCE=10V, UNIT Ω μ nS 3/5 KTN2222S/AS 1000 h FE - I C 1K COMMON EMITTER Ta=25 C 800 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - V CE 16mA 14mA 12mA 10mA 8mA 6mA 4mA 20mA 18mA 600 400 I B =2mA 200 0 0.4 0.8 1.2 1.6 VCE =10V 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =1V VCE =2V 100 50 30 10 0.5 1.8 1 3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 0.2 VCE(sat) 3 10 30 100 300 300 1.2 VBE(sat) 1.0 Ta=-25 C 0.8 Ta=25 C 0.6 Ta=75 C 0.4 0.2 3 1 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE fT - IC COMMON EMITTER VCE =10V 100 30 Ta=75 C 10 3 1 1K COMMON EMITTER I C /I B =10 1.4 0 0.5 1k TRANSITION FREQUENCY f T (MHz) 500 300 COLLECTOR CURRENT I C (mA) 1.6 0.4 1 100 VBE(sat) - I C COMMON EMITTER I C /I B =10 Ta=25 C Ta= 25 C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 0 0.5 30 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 0.6 10 Ta=-25 C 0.3 1000 Ta=25 C VCE =10V 300 100 30 10 1 0.1 1k 3 10 30 100 300 1k 3k COLLECTOR CURRENT I C (mA) 0.05 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 BASE-EMITTER VOLTAGE VBE (V) 1999. 5. 4 Revision No : 2 4/5 1999. 5. 4 Cob - V CB Cib - V EB 100 Pc - Ta COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) KTN2222S/AS COMMON EMITTER f=1MHz, Ta=25 C 30 Cib 10 Cob 3.0 1.0 0.1 1.0 10 100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) Revision No : 2 300 500 400 (1) MOUNTED ON 99.5% ALUMINA 10x8x0.6mm (2) Ta=25 C (1) 300 200 (2) 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 5/5