NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT657 ISSUE 1 FEB 94 FEATURES * 300 Volt VCEO * 0.5 Amps continuous current * Ptot= 1 Watt APPLICATIONS * Telephone dialler circuits * Video output drivers REFER TO ZTX657 FOR GRAPHS B C E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM Continuous Collector Current IC Power Dissipation at Tamb =25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 A 0.5 A 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 300 V IC=100µ A, IE=0 V(BR)CEO 300 V IC=10mA, , IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=200V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1 V IC=100mA, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1 V IC=100mA, VCE=5V* Static Forward Current hFE Transfer Ratio 40 50 Transition Frequency fT 30 Output Capacitance Cobo TYP. MAX. IC=10mA, VCE=5V* IC=100mA, VCE=5V* 20 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-50